MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

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MOCVD growth and characterization of Pb-based ferroelectric thin films

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics ◽

10.1109/isaf.1996.602708 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Shiosaki ◽

H. Fujisawa ◽

M. Shimizu

Keyword(s):

Thin Films ◽

Ferroelectric Thin Films ◽

Mocvd Growth

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MOCVD Growth of Transparent Conducting Cd2SnO4 Thin Films

Chemical Vapor Deposition ◽

10.1002/cvde.200304177 ◽

2004 ◽

Vol 10 (6) ◽

pp. 297-300 ◽

Cited By ~ 15

Author(s):

A.W. Metz ◽

M.A. Lane ◽

C.R. Kannewurt ◽

K.R. Poeppelmeier ◽

T.J. Marks

Keyword(s):

Thin Films ◽

Mocvd Growth ◽

Transparent Conducting

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MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates

Journal of The Electrochemical Society ◽

10.1149/1.1782633 ◽

2004 ◽

Vol 151 (9) ◽

pp. G638 ◽

Cited By ~ 9

Author(s):

Davide Barreca ◽

Andrea Camporese ◽

Maurizio Casarin ◽

Naida El Habra ◽

Andrea Gasparotto ◽

...

Keyword(s):

Thin Films ◽

Cobalt Phosphide ◽

Mocvd Growth ◽

Inp Substrates

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MOCVD growth of TiO2 thin films on single crystal GaAs substrates

International Journal of Inorganic Materials ◽

10.1016/s1466-6049(99)00061-6 ◽

2000 ◽

Vol 2 (2-3) ◽

pp. 255-259 ◽

Cited By ~ 15

Author(s):

M.C. Marco de Lucas ◽

F. Fabreguette ◽

S. Collin ◽

S. Bourgeois

Keyword(s):

Thin Films ◽

Single Crystal ◽

Tio2 Thin Films ◽

Mocvd Growth ◽

Gaas Substrates ◽

Crystal Gaas

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Growth of Complex Epitaxial Multi-Component Oxide Thin Films and Heterostructures with Strong Anisotropy

MRS Proceedings ◽

10.1557/opl.2011.1022 ◽

2011 ◽

Vol 1368 ◽

Author(s):

Kazuhiro Endo ◽

Petre Badica ◽

Hidehito Nanto ◽

Yoshinori Takei ◽

Shunichi Arisawa ◽

...

Keyword(s):

Thin Films ◽

High Temperature ◽

Growth Mechanism ◽

High Temperature Superconductors ◽

Stability Domain ◽

Significant Progress ◽

Strong Anisotropy ◽

Mocvd Growth ◽

Film Substrate ◽

Substrate Film

ABSTRACTWe briefly review our data on MOCVD growth problems of sandwich stacked heterostructures based on Bi-Sr-Ca-Cu-O and YBa2Cu3O7 high temperature superconductors. Non-superconducting layers were (Ca, Sr)CuO2, (Ca, Ba)CuO2 and Bi4Ti3O12. Structures were with c-axis normal or inclined with about 45° vs. the surface of the substrate. Film-substrate lattice relationship, growth mechanism and the resulting morphology controlling roughness and uniformity, stability domain of the phases and inter diffusion are all important aspects toward significant progress in the field. Our analysis indicates that requirements are more severe for non-c-axis heterostructures, and suggest some ideas for further improvements.

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MOCVD Precursor Delivery Monitored and Controlled Using UV Spectroscopy

MRS Proceedings ◽

10.1557/proc-474-69 ◽

1997 ◽

Vol 474 ◽

Author(s):

Brian J. Rappoli ◽

William J. DeSisto ◽

Tobin J. Marks ◽

John A. Belot

Keyword(s):

Thin Films ◽

Gas Phase ◽

Uv Spectroscopy ◽

Mixed Metal Oxide ◽

Feedback Control System ◽

Metal Oxide Films ◽

Mocvd Growth ◽

Mocvd Precursor ◽

Htsc Thin Films

ABSTRACTThe glyme adducts of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate)barium, Ba(hfac)2•glyme, are frequently employed as precursors in the MOCVD fabrication of HTSC thin films. The physical properties of these precursors can be modified by changing the glyme ligand in the barium complex. In this study, gas phase concentrations of two barium complexes as a function of purge time and bubbler temperature have been examined by in-situ UV spectroscopy. Also presented are the details of a UV spectrophotometric-based feedback control system designed to maintain constant gas phase concentration of 2,2,6,6-tetramethyl-3,5-heptadionate (thd) precursors, Cu(thd)2 and Y(thd)3, during MOCVD growth of mixed metal oxide films.

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