A 2.4 GHZ CMOS LNA INPUT MATCHING DESIGN USING RESISTIVE FEEDBACK TOPOLOGY IN 0.13 UM TECHNOLOGY

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

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Inductive Feedback Technique for Design of High Gain 0.18μm CMOS LNA for 5G Applications

Journal of Circuits System and Computers ◽

10.1142/s0218126621502364 ◽

2021 ◽

pp. 2150236

Author(s):

Anjana Jyothi Banu ◽

G. Kavya ◽

D. Jahnavi

Keyword(s):

Reflection Coefficient ◽

Noise Figure ◽

Cmos Technology ◽

High Gain ◽

Low Noise ◽

Common Source ◽

Matching Network ◽

Input Matching ◽

Cmos Lna ◽

Noise Amplifier

A 26[Formula: see text]GHz low-noise amplifier (LNA) designed for 5G applications using 0.18[Formula: see text][Formula: see text]m CMOS technology is proposed in this paper. The circuit includes a common-source in the first stage to suppress the noise in the amplifier. The successive stage has a Cascode topology along with an inductive feedback to improve the power gain. The input matching network is designed to achieve the input reflection coefficient less than [Formula: see text]7dB at the intended frequency. The matching network at the output is designed using inductor–capacitor (LC) components connected in parallel to attain the output reflection coefficient of [Formula: see text]10[Formula: see text]dB. Due to the inductor added in feedback at the second stage. The [Formula: see text] obtained is 18.208[Formula: see text]dB at 26[Formula: see text]GHz with a noise figure (NF) of 2.8[Formula: see text]dB. The power supply given to the LNA is 1.8[Formula: see text]V. The simulation and layout of the presented circuit are performed using Cadence Virtuoso software.

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RF Input Matching Design for Closed-Loop Direct Delta–Sigma Receivers

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2015.2401585 ◽

2015 ◽

Vol 63 (4) ◽

pp. 1370-1379 ◽

Cited By ~ 1

Author(s):

Kim B. Ostman ◽

Mikko Englund ◽

Olli Viitala ◽

Kari Stadius ◽

Kimmo Koli ◽

...

Keyword(s):

Closed Loop ◽

Input Matching ◽

Delta Sigma ◽

Matching Design

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An ESD Protected Wideband CMOS Low Noise Amplifier Employing Active Feedback Technique

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.403-408.2809 ◽

2011 ◽

Vol 403-408 ◽

pp. 2809-2813

Author(s):

Kuan Bao ◽

Xiang Ning Fan

Keyword(s):

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Cmos Process ◽

Fully Integrated ◽

Input Matching ◽

Active Feedback ◽

Cmos Lna ◽

Noise Amplifier ◽

On Chip

This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic and input matching are simultaneously achieved by active-feedback technique. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Implemented in 0.18-μm CMOS process, the core size of the fully integrated LNA circuits is 535 μm×425 μm without any passive on-chip inductor. The simulated gain and the minimal noise figure of the CMOS LNA are 17.5 dB and 2.0 dB, respectively. The LNA achieves a -3dB bandwidth of 3.1 GHz. And the simulated IIP3 is -4.4 dBm at 2.5 GHz. Operating at 1.8V, the LNA draws a current of 7.7 mA.

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