Relaxation processes in the irradiated bipolar and MOS devices

2019 ◽  
Vol 2 (1) ◽  
pp. 22-32
Author(s):  
Yu. V. Bogatyrev ◽  
◽  
S. B. Lastovski ◽  
D. A. Ogorodnikov ◽  
A. V. Ket’ko ◽  
...  
Keyword(s):  
Relaxation Processes ◽  
Mos Devices

Activation energy of relaxation processes in chalcogenide glasses

2013 ◽  
Vol 34 (0) ◽  
pp. 59-63
Author(s):  
А. А. Горват ◽  
В. М. Кришеник ◽  
А. Е. Кріштофорій ◽  
В. В. Мінькович ◽  
О. А. Молнар
Keyword(s):  
Activation Energy ◽  
Chalcogenide Glasses ◽  
Relaxation Processes

Features of radiothermoluminescence of polypropylene and ethylene propylenediene elastomer SKEPT-4044 compositions with nanoscale metal-containing fillers

2020 ◽  
pp. 66-73
Author(s):  
A.M. Magerramov ◽  
◽  
N.I. Kurbanova ◽  
M.N. Bayramov ◽  
N.A. Alimirzoyeva ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Molecular Mobility ◽  
Fe3o4 Nanoparticles ◽  
Low Temperatures ◽  
Frost Resistance ◽  
Relaxation Processes ◽  
Ethylene Propylene ◽  
Temperature Range ◽  
Β Relaxation

Using radiothermoluminescence (RTL), the molecular mobility features in the temperature range of 77-300 K were studied for the polypropylene (PP)/ethylene propylene diene elastomer SKEPT-4044 with NiO, Cu2O and Fe3O4 nanoparticles (NPs) based on ABS-acrylonitrile butadiene or SCS-divinyl styrene matrices. It has been shown that the introduction of nanofillers in PP significantly affects the nature and temperature of γ- and β-relaxation processes, while the region of manifestation of the β-process noticeably shifts to the region of low temperatures. Composites with Cu2O NPs have a higher β-transition temperature Tβ than composites with other NPs. It was found that PP/SKEPT-4044 composites with Cu2O NPs with a dispersion of 11-15 nm and acrylonitrile butadiene thermoplastics have optimal frost resistance compared to other compositions.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Weak Impacts and Relaxation Processes in Water and Other Liquids

2019 ◽  
Vol 53 (6) ◽  
pp. 955-959
Author(s):  
A. K. Lyashchenko ◽  
V. V. Dil’man ◽  
V. V. Taran
Keyword(s):  
Relaxation Processes

Electron Spin Decoherence by Nuclei

2018 ◽  
Author(s):  
M. M. Glazov
Keyword(s):  
Electron Spin ◽  
Spin Dynamics ◽  
Magnetic Moments ◽  
Host Lattice ◽  
Spin Model ◽  
Relaxation Processes ◽  
Nuclear Spins ◽  
Model Calculations ◽  
Spin Decoherence ◽  
Quantum Mechanical Approach

The discussion of the electron spin decoherence and relaxation phenomena via the hyperfine interaction with host lattice spins is presented here. The spin relaxation processes processes limit the conservation time of spin states as well as the response time of the spin system to external perturbations. The central spin model, where the spin of charge carrier interacts with the bath of nuclear spins, is formulated. We also present different methods to calculate the spin dynamics within this model. Simple but physically transparent semiclassical treatment where the nuclear spins are considered as largely static classical magnetic moments is followed by more advanced quantum mechanical approach where the feedback of electron spin dynamics on the nuclei is taken into account. The chapter concludes with an overview of experimental data and its comparison with model calculations.

scholarly journals A Dynamical Study of Fusion Hindrance with Nakajima-Zwanzig Projection Method

2021 ◽  
Author(s):  
Yasuhisa Abe ◽  
David Boilley ◽  
Quentin Hourdillé ◽  
Caiwan Shen
Keyword(s):  
Cross Sections ◽  
Degrees Of Freedom ◽  
Operator Method ◽  
Initial Distribution ◽  
Physical Parameters ◽  
Relaxation Processes ◽  
Fast Variable ◽  
Dynamical Study ◽  
Injection Point ◽  
Slow Variables

Abstract A new framework is proposed for the study of collisions between very heavy ions which lead to the synthesis of Super-Heavy Elements (SHE), to address the fusion hindrance phenomenon. The dynamics of the reaction is studied in terms of collective degrees of freedom undergoing relaxation processes with different time scales. The Nakajima-Zwanzig projection operator method is employed to eliminate fast variable and derive a dynamical equation for the reduced system with only slow variables. There, the time evolution operator is renormalised and an inhomogeneous term appears, which represents a propagation of the given initial distribution. The term results in a slip to the initial values of the slow variables. We expect that gives a dynamical origin of the so-called “injection point s” introduced by Swiatecki et al in order to reproduce absolute values of measured cross sections for SHE. A formula for the slip is given in terms of physical parameters of the system, which confirms the results recently obtained with a Langevin equation, and permits us to compare various incident channels.

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