scholarly journals Study on Fatigue Characteristics of Concrete Sleepers with Porous Basalt as the Aggregate

2021 ◽  
Vol 28 (6) ◽  
1988 ◽  
Vol 37 (417) ◽  
pp. 637-642
Author(s):  
Shigeru YAMAMOTO ◽  
Hideaki NAKAYAMA ◽  
Tsuneshichi TANAKA

Metals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1046
Author(s):  
Balachander Gnanasekaran ◽  
Jie Song ◽  
Vijay Vasudevan ◽  
Yao Fu

Laser powder bed fusion (LPBF) has been increasingly used in the fabrication of dense metallic structures. However, the corrosion related properties of LPBF alloys, in particular environment-assisted cracking, such as corrosion fatigue properties, are not well understood. In this study, the corrosion and corrosion fatigue characteristics of LPBF 316L stainless steels (SS) in 3.5 wt.% NaCl solution have been investigated using an electrochemical method, high cycle fatigue, and fatigue crack propagation testing. The LPBF 316L SSs demonstrated significantly improved corrosion properties compared to conventionally manufactured 316L, as reflected by the increased pitting and repassivation potentials, as well as retarded crack initiation. However, the printing parameters did not strongly affect the pitting potentials. LPBF samples also demonstrated enhanced capabilities of repassivation during the fatigue crack propagation. The unique microstructural features introduced during the printing process are discussed. The improved corrosion and corrosion fatigue properties are attributed to the presence of columnar/cellular subgrains formed by dislocation networks that serve as high diffusion paths to transport anti-corrosion elements.


2021 ◽  
pp. 105477382110352
Author(s):  
Hui-Ying Yang ◽  
Yun-Hsiang Lee ◽  
Jin-Ming Wu ◽  
I-Rue Lai ◽  
Shiow-Ching Shun

This study’s purpose was to describe changes in symptom distress and fatigue characteristics identifying which symptoms significantly impacted fatigue characteristics of patients with Gastric Cancer (GC) within 1 month after gastrectomy. A prospective longitudinal study was conducted. Patients with GC who were scheduled for gastrectomy were recruited from surgical outpatient clinics and surgery wards in northern Taiwan. Data were collected using a set of questionnaires before (T0) and 7 (T1) and 28 days (T2) after gastrectomy. Over all, 86 patients experienced mild levels of fatigue and symptom distress. The changes in worst fatigue and fatigue interference were greatest at T1. Anxiety had a significant negative effect on both worst fatigue and fatigue interference. Dry mouth, pain, and body image had significant deleterious effects on worst fatigue. The co-occurring symptoms affecting fatigue for patients with GC in the acute phase after gastrectomy should be actively assessed to ensure optimal fatigue management.


1998 ◽  
Vol 73 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Z. G. Zhang ◽  
J. S. Liu ◽  
Y. N. Wang ◽  
J. S. Zhu ◽  
F. Yan ◽  
...  

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.


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