Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures

1999 ◽  
Vol 8 (2) ◽  
pp. 171-178 ◽  
Author(s):  
K. Kassmi ◽  
R. Maimouni ◽  
G. Sarrabayrouse
Keyword(s):  
Oxide Semiconductor ◽  
Irradiation Effect ◽  
Ionizing Irradiation ◽  
Semiconductor Structures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Thin Oxide

scholarly journals FRACTAL PROPERTIES OF MICROPLASMA BREAKDOWN AND STRUCTURAL HETEROGENEITY OF SEMICONDUCTOR MATERIALS

2019 ◽  
Vol 3 ◽  
pp. 105
Author(s):  
Samuil Khanin ◽  
Antonina Shashkina
Keyword(s):  
Fractal Dimension ◽  
Structural Heterogeneity ◽  
Semiconductor Materials ◽  
Avalanche Breakdown ◽  
Semiconductor Structures ◽  
Fractal Properties ◽  
Current Voltage ◽  
Structural Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Microplasma Breakdown

This work presents experimental results on the study of current-voltage characteristics and oscillograms of microplasma pulses of the p-n-junction avalanche breakdown. Based on the latter, the pulse duration distributions are determined. As a result, it is shown that microplasma noise has fractal properties. The latter form the basis of avalanche breakdown types developed classification. The correlation between the fractal dimension of microplasma noise and structural inhomogeneities of functional semiconductor structures is revealed.

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