scholarly journals On Prognosis of Growth of Film by Pulsed Laser Deposition and Influence of Variation of Parameters on Technological Process

2021 ◽  
Vol 15 (2) ◽  
pp. 87-98
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Pulsed Laser Deposition ◽  
Technological Process ◽  
Growth Process ◽  
Analytical Approach ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Variation Of Parameters

In this paper, we consider an analytical approach for analyzing film growth by pulsed laser deposition. The approach gives a possibility to analyzed the considered technological in more common case. The influence of the parameters of the growth process on the growth of films is investigated.

An Analytical Approach for Analyzing Film Growth by Pulsed Laser Deposition. Analysis of the Influence of Parameters

2021 ◽  
Author(s):  
Evgeny L. Pankratov
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Process ◽  
Analytical Approach ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Abstract In this paper, we consider an analytical approach for analyzing film growth by pulsed laser deposition. The influence of the parameters of the growth process on the growth of films is investigated.

Plasma-assisted pulsed laser deposition for the improvement of the film growth process

2002 ◽  
Vol 186 (1-4) ◽  
pp. 533-537 ◽  
Author(s):  
A. De Giacomo ◽  
V.A. Shakhatov ◽  
G.S. Senesi ◽  
O. De Pascale ◽  
F. Prudenzano
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Process ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Tracing the origin of oxygen for La0.6Sr0.4MnO3thin film growth by pulsed laser deposition

2015 ◽  
Vol 49 (4) ◽  
pp. 045201 ◽  
Author(s):  
J Chen ◽  
M Döbeli ◽  
D Stender ◽  
M M Lee ◽  
K Conder ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

ZnSe and ZnO film growth by pulsed-laser deposition

1998 ◽  
Vol 127-129 ◽  
pp. 496-499 ◽  
Author(s):  
Y.R. Ryu ◽  
S. Zhu ◽  
S.W. Han ◽  
H.W. White ◽  
P.F. Miceli ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Film

Incongruent pulsed laser deposition strategy for thin film growth of Ca3Co4O9 thermoelectric compound

2019 ◽  
Vol 45 (10) ◽  
pp. 13138-13143 ◽  
Author(s):  
Haiyang Hu ◽  
Fei Shao ◽  
Jikun Chen ◽  
Max Döbeli ◽  
Qingfeng Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
A. Kumar ◽  
J. Narayan
Keyword(s):  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Tin Films ◽  
High Resolution Tem

ABSTRACTEpitaxial growth of TiN films on GaAs(100) by pulsed laser deposition has been studied. Excimer KrF laser (λ=248 nm, τ=30 ns) has been used for deposition of TiN films in a chamber maintained at vacuum of ≤ 10−6 torr. The microstructure of TiN films has been characterized by x-ray diffraction and transmission electron microscopy (TEM). Cross-sectional high resolution TEM showed a smooth unreacted interface between the single crystalline TiN film and GaAs. The predominant epitaxial relationship was found to be [110]TiN//[010]GaAs, (220)TiN//(040)GaAs at a substrate temperature of 350°C. Modelling of epitaxial growth showed that the interfacial energy is an important term responsible for 45° rotation of the TiN unit cell with respect to that of GaAs. The high strain energy associated with the coherent epilayer is reduced by domain epitaxial growth. These films were characterized using high-resolution TEM techniques, and experimental results were rationalized by thin film growth modeling.

High Throughput Optimization of Y-Type Magnetoplumbite Epitaxial thin Film Growth by Combinatorial Pulsed Laser Deposition Technique

2001 ◽  
Vol 700 ◽  
Author(s):  
I. Ohkubo ◽  
Y. Matsumoto ◽  
M. Ohtani ◽  
T. Hasegawa ◽  
K. Ueno ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Film Growth ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Throughput Optimization ◽  
Tem Analysis ◽  
First Time

AbstractThin films of Y-type magnetoplumbite (Ba2Co2Fe12O22: Co2Y) with such a huge unit cell length as 43.5 Å has been successfully fabricated for the first time with the aid of combinatorial optimization of pulsed laser deposition process. Planning a thickness gradient CoO buffer layer on MgAl2O4(111) substrate was very effective for prevent the phase separation of Co deficient impurity (BaFe2O4) to reside in the formation of desired Co2Y phase.From the TEM analysis, the CoO buffer layer of optimum thickness was incorporated into the Co2Y film to make theinterface with the make an atomically sharp.

Sign in / Sign up

Export Citation Format

Share Document