P-26: Self-aligned Top-gate ZnO Thin Film Transistor with Novel Al2O3/SiO2 Gate Insulator Structure
2010 ◽
Vol 41
(1)
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pp. 1319
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2010 ◽
Vol 157
(12)
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pp. H1121
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2012 ◽
Vol 12
(7)
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pp. 5859-5863
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2016 ◽
Vol 16
(3)
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pp. 2632-2636
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Keyword(s):
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1998 ◽
Vol 45
(12)
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pp. 2548-2551
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Keyword(s):
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2009 ◽
Vol 12
(10)
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pp. J93
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