scholarly journals Effects of Sputtering on XPS Depth Profile Analysis of Zirconium-based Chemical Conversion Coatings

2020 ◽  
Vol 69 (10.11) ◽  
pp. 559-565
Author(s):  
Hideyuki TAGUCHI ◽  
Yusuke MIYAZAWA ◽  
Yoko KEBUKAWA ◽  
Kensei KOBAYASHI
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Chemical Conversion ◽  
Conversion Coatings ◽  
Depth Profile Analysis ◽  
Xps Depth Profile

Formation mechanism of plasmonic silver nanohexagonal particles made by galvanic displacement reaction

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31454-31461 ◽  
Author(s):  
Y. S. Yamamoto ◽  
Y. Fujime ◽  
N. Takahashi ◽  
S. Nakanishi ◽  
T. Itoh
Keyword(s):  
Formation Mechanism ◽  
Depth Profile ◽  
Profile Analysis ◽  
Displacement Reaction ◽  
Galvanic Displacement ◽  
Depth Profile Analysis ◽  
Galvanic Displacement Reaction ◽  
Xps Depth Profile

Multi-element XPS depth profile analysis made clear that Ag nanoscale hexagonal columns formed by newly-discovered galvanic displacement reaction are covered with Cu compounds which prevent Ag columns from fusion, resulting in stable hotspots.

XPS depth profile analysis of sol–gel calcium-modified lead titanate thin films

1999 ◽  
Vol 354 (1-2) ◽  
pp. 66-72 ◽  
Author(s):  
D Leinen ◽  
R Sirera ◽  
E Rodrı́guez-Castellón ◽  
M.L Calzada
Keyword(s):  
Thin Films ◽  
Depth Profile ◽  
Lead Titanate ◽  
Profile Analysis ◽  
Sol Gel ◽  
Depth Profile Analysis ◽  
Xps Depth Profile

XPS Depth Profile Analysis of ArF Immersion Resists by using C60 Ion Beam

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (7) ◽  
pp. 348-353 ◽  
Author(s):  
Yuichi YAMAMOTO ◽  
Naoko SHIROTA ◽  
Kiyoshi YAMAMOTO
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Ion Beam ◽  
Depth Profile Analysis ◽  
Xps Depth Profile

XPS Depth Profile Analysis of a Thin Non-Conducting Titanate Superlattice

2000 ◽  
Vol 133 (1-4) ◽  
pp. 303-306 ◽  
Author(s):  
Steffen Oswald ◽  
Wolfgang H��ler ◽  
Rainer Reiche ◽  
Johannes Lindner ◽  
Fran�ois Weiss
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Xps Depth Profile

Sputter depth profile analysis of marker layers

1990 ◽  
Vol 15 (8) ◽  
pp. 463-465 ◽  
Author(s):  
J. A. Peinador ◽  
I. Abril ◽  
J. J. Jiménez-Rodríguez ◽  
A. Gras-Marti
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis

Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

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