scholarly journals Effect of Atomic Layer Deposited HfO2 thin Film Interfacial Layer on the Electrical Properties of Au/Ti/n-GaAs Schottky Diode

2021 ◽  
Author(s):  
Dilber Esra YILDIZ ◽  
A. Karabulut ◽  
I. Orak ◽  
A. Türüt
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Barrier Height ◽  
Forward Bias ◽  
Atomic Layer ◽  
Intersection Point ◽  
State Density ◽  
Mis Structure ◽  
Thin Film Layer ◽  
Mis Diode

Abstract The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60–320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (ΦB0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of Qss= 4.14x1012 Ccm− 2 for the MIS diode was calculated from the barrier height difference of ΔΦ=0.94-0.77=0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance (Z') and imaginary impedance (Z'') were evaluated using admittance measurements. The C and G values increased, whereas (Z'') and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G–V curves appeared at forward bias side (≈1.4 V), after this intersection point of the G–V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total (Z) versus V curves appeared at forward bias side (≈1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

ELECTRICAL PROPERTIES OF Al/p-Si STRUCTURE WITH Al2O3 THIN FILM FABRICATED BY ATOMIC LAYER DEPOSITION SYSTEM

2016 ◽  
Vol 24 (06) ◽  
pp. 1750077
Author(s):  
DILBER ESRA YİLDİZ ◽  
HATICE KANBUR CAVUŞ
Keyword(s):  
Atomic Layer Deposition ◽  
Barrier Height ◽  
Image Force ◽  
Atomic Layer ◽  
State Density ◽  
Mis Structure ◽  
Insulator Layer ◽  
Zero Bias ◽  
Energy Density Distribution ◽  
Layer Deposition

Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si [Formula: see text] and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage ([Formula: see text]) characteristics of these structures were investigated in two different temperatures. The main electrical parameters such as the ideality factor ([Formula: see text]), zero bias barrier height ([Formula: see text]), and series resistance ([Formula: see text]) values were found for 300 and 400[Formula: see text]K. The energy density distribution profiles of the interface state density ([Formula: see text]) were determined from the [Formula: see text] characteristics. In addition, the capacitance–voltage ([Formula: see text]) and conductance–voltage ([Formula: see text]) characteristics of devices were investigated in the frequency range 50–1000[Formula: see text]kHz at room temperature. Frequency-dependent electrical characteristics such as doping acceptor concentration ([Formula: see text]), energy difference between the valance band edge and bulk Fermi level ([Formula: see text]), diffusion potential ([Formula: see text]), barrier height ([Formula: see text]), the image force barrier lowering ([Formula: see text]), maximum electric field ([Formula: see text]), and [Formula: see text] values were determined using [Formula: see text] and [Formula: see text] plots. In addition, the [Formula: see text] values were performed using Hill–Coleman method. According to experimental results, the locations of [Formula: see text] and [Formula: see text] have an important effect on [Formula: see text], [Formula: see text] and [Formula: see text] plots of MIS structure.

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

Enhancement of electrical properties of vanadyl phthalocyanine derivative by PCBM

2015 ◽  
Vol 44 (3) ◽  
pp. 148-156 ◽  
Author(s):  
F. Aziz ◽  
K. Sulaiman ◽  
Wissam Khayer Al-Rawi ◽  
Z. Ahmad ◽  
M.H. Sayyad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Barrier Height ◽  
Forward Bias ◽  
Composite Thin Film ◽  
Organic Metal ◽  
Content Type ◽  
Metal Organic ◽  
Phthalocyanine Derivative

Purpose – The purpose of this paper is to investigate the effect of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) on improvement of physical and electrical properties of vanadyl phthalocyanine derivative. The correlation between the physical characteristics of the active layers, comprising vanadyl 2,9,16, 23-tetraphenoxy-29H,31H-phthalocyanine (VOPcPhO) and PCBM, and the electrical properties of metal/organic/metal devices have been studied. The use of soluble vanadyl phthalocyanine derivative makes it very attractive for a variety of applications due to its tunable properties and high solubility. Design/methodology/approach – The sandwich type structures Al/VOPcPhO/Al and Al/VOPcPhO:PCBM/Al were fabricated by spin casting the active organic layers between the top and bottom (aluminum) electrodes. The stand-alone (VOPcPhO) and composite (VOPcPhO:PCBM) thin films were characterized by X-ray diffraction, atomic force microscopy, UV/Vis and Raman spectroscopy. The electronic properties of the metal/organic/metal devices were studied using current-voltage (I-V) characteristics in dark at room temperature. Findings – The values of barrier height for Al/VOPcPhO/Al and Al/VOPcPhO:PCBM/Al devices were obtained from the forward bias I-V curves and were found to be 0.7 eV and 0.62 eV, respectively. The present study indicates that the device employing VOPcPhO:PCBM composite film as the active layer, with better structural and morphological characteristics, results in reduced barrier height at the metal-organic film interface as compared to the one fabricated with the stand-alone film. Research limitations/implications – It is shown that doping VOPcPhO with PCBM improves the crystallinity, morphology and junction properties. Practical implications – The spin coating technique provides a simple, less expensive and effective approach for preparing thin films. The soluble VOPcPhO is conveniently dissolved in a number of organic solvents. Originality/value – The physical properties of the VOPcPhO:PCBM composite thin film and the electrical properties of the composite thin-film-based metal/organic/metal devices have not been reported in the literature, as far as our knowledge is concerned.

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 5 (1) ◽  
pp. 7
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

2006 ◽  
Vol 527-529 ◽  
pp. 1083-1086 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Da Il Eom ◽  
Sang Yong No ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Mis Structure ◽  
Al2o3 Layer ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Mis Structures

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.

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