ELECTRICAL PROPERTIES OF Al/p-Si STRUCTURE WITH Al2O3 THIN FILM FABRICATED BY ATOMIC LAYER DEPOSITION SYSTEM

2016 ◽  
Vol 24 (06) ◽  
pp. 1750077
Author(s):  
DILBER ESRA YİLDİZ ◽  
HATICE KANBUR CAVUŞ
Keyword(s):  
Atomic Layer Deposition ◽  
Barrier Height ◽  
Image Force ◽  
Atomic Layer ◽  
State Density ◽  
Mis Structure ◽  
Insulator Layer ◽  
Zero Bias ◽  
Energy Density Distribution ◽  
Layer Deposition

Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si [Formula: see text] and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage ([Formula: see text]) characteristics of these structures were investigated in two different temperatures. The main electrical parameters such as the ideality factor ([Formula: see text]), zero bias barrier height ([Formula: see text]), and series resistance ([Formula: see text]) values were found for 300 and 400[Formula: see text]K. The energy density distribution profiles of the interface state density ([Formula: see text]) were determined from the [Formula: see text] characteristics. In addition, the capacitance–voltage ([Formula: see text]) and conductance–voltage ([Formula: see text]) characteristics of devices were investigated in the frequency range 50–1000[Formula: see text]kHz at room temperature. Frequency-dependent electrical characteristics such as doping acceptor concentration ([Formula: see text]), energy difference between the valance band edge and bulk Fermi level ([Formula: see text]), diffusion potential ([Formula: see text]), barrier height ([Formula: see text]), the image force barrier lowering ([Formula: see text]), maximum electric field ([Formula: see text]), and [Formula: see text] values were determined using [Formula: see text] and [Formula: see text] plots. In addition, the [Formula: see text] values were performed using Hill–Coleman method. According to experimental results, the locations of [Formula: see text] and [Formula: see text] have an important effect on [Formula: see text], [Formula: see text] and [Formula: see text] plots of MIS structure.

scholarly journals Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

2018 ◽  
Author(s):  
Nuriye Kaymak ◽  
Esra Efil ◽  
Elanur Seven ◽  
Adem Tataroğlu ◽  
Sema Bilge Ocak ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Layer Deposition ◽  
P Type

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

2006 ◽  
Vol 527-529 ◽  
pp. 1083-1086 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Da Il Eom ◽  
Sang Yong No ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Mis Structure ◽  
Al2o3 Layer ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Mis Structures

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.

scholarly journals Effect of Atomic Layer Deposited HfO2 thin Film Interfacial Layer on the Electrical Properties of Au/Ti/n-GaAs Schottky Diode

2021 ◽  
Author(s):  
Dilber Esra YILDIZ ◽  
A. Karabulut ◽  
I. Orak ◽  
A. Türüt
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Barrier Height ◽  
Forward Bias ◽  
Atomic Layer ◽  
Intersection Point ◽  
State Density ◽  
Mis Structure ◽  
Thin Film Layer ◽  
Mis Diode

Abstract The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60–320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (ΦB0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of Qss= 4.14x1012 Ccm− 2 for the MIS diode was calculated from the barrier height difference of ΔΦ=0.94-0.77=0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance (Z') and imaginary impedance (Z'') were evaluated using admittance measurements. The C and G values increased, whereas (Z'') and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G–V curves appeared at forward bias side (≈1.4 V), after this intersection point of the G–V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total (Z) versus V curves appeared at forward bias side (≈1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

scholarly journals Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 525
Author(s):  
Yejoo Choi ◽  
Jaemin Shin ◽  
Seungjun Moon ◽  
Changhwan Shin
Keyword(s):  
Atomic Layer Deposition ◽  
Barrier Height ◽  
Threshold Voltage ◽  
Glass Substrate ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Cross Point ◽  
Threshold Switching ◽  
Layer Deposition ◽  
Ito Glass

Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices with different cycle ratios (i.e., 3:1, 3:2, and 3:3) were fabricated and studied. The threshold voltage of the devices was increased from 0.9 V to 3.2 V, as the relative contents of Al2O3 layer in the superlattice were increased. At the same time, it is demonstrated that the off-resistance values of the devices were enhanced from 2.6 × 109 to 6 × 1010 Ω as the atomic layer deposition (ALD) cycle ratio of HfO2 to Al2O3 layer was adjusted from 3:1 to 3:3. However, the hold voltage and the on-current values were almost identical for the three devices. These results can be understood using the larger barrier height of Al2O3 layer than that of HfO2 layer.

Frequency dependent dielectric properties of atomic layer deposition grown zinc-oxide based MIS structure

2019 ◽  
Vol 568 ◽  
pp. 31-35 ◽  
Author(s):  
E. Efil ◽  
N. Kaymak ◽  
E. Seven ◽  
A. Tataroğlu ◽  
S. Bilge Ocak ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Mis Structure ◽  
Frequency Dependent ◽  
Layer Deposition

scholarly journals Normally-off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Membranes ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 727
Author(s):  
Hsien-Chin Chiu ◽  
Chia-Hao Liu ◽  
Chong-Rong Huang ◽  
Chi-Chuan Chiu ◽  
Hsiang-Chun Wang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Reliability ◽  
Atomic Layer ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Enhancement Mode ◽  
Layer Deposition ◽  
P Type

A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.

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