Joining YSZ electrolyte to AISI 441 interconnect for solid oxide cells using the Ag interlayer: Enhanced mechanical and aging properties

Author(s):  
Xiaoqing Si ◽  
Xiaoyang Wang ◽  
Chun Li ◽  
Tong Lin ◽  
Junlei Qi ◽  
...  

Abstract Conventional Ag-CuO braze can lead to two electrolyte/interconnect joining issues: over-oxidation at the steel interconnect and hydrogen-induced decomposition of CuO. This work demonstrates that a pure Ag interlayer, instead of Ag-CuO braze, can join YSZ electrolyte to AISI 441 interconnect in air. Reliable joining between YSZ and AISI 441 can be realized at 920 °C. A dense and thin oxide layer (~2 μm) is formed at the AISI 441 interface. Also, an interatomic joining at the YSZ/Ag interface is detected by TEM observation. Obtained joints display high shear strengths (~86.1 MPa), 161% higher than that of joints brazed by Ag-CuO braze (~33 MPa). After aging in reducing and oxidizing atmospheres (800 °C/300 h), joints remain tight and dense, indicating a better aging performance. This technique eliminates the CuO-induced issues, which will extend lifetimes for SOFC/SOEC stacks and other ceramic/metal joining applications.

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1573
Author(s):  
Xiaoqing Si ◽  
Xiaoyang Wang ◽  
Chun Li ◽  
Tong Lin ◽  
Junlei Qi ◽  
...  

Reactive air brazing has been widely used in fabricating solid oxide fuel/electrolysis cell (SOFC/SOEC) stacks. However, the conventional Ag–CuO braze can lead to (I) over oxidation at the steel interconnect interface caused by its adverse reactions with the CuO and (II) many voids caused by the hydrogen-induced decomposition of CuO. The present work demonstrates that the Ag particle interlayer can be used to join yttria-stabilized zirconia (YSZ) electrolytes to AISI 441 interconnect in air instead of Ag–CuO braze. Reliable joining between YSZ and AISI 441 can be realized at 920 °C. A dense and thin oxide layer (~2 μm) is formed at the AISI 441 interface. Additionally, an interatomic joining at the YSZ/Ag interface was observed by TEM. Obtained joints displayed a shear strength of ~86.1 MPa, 161% higher than that of the joints brazed by Ag–CuO braze (~33 MPa). After aging in reducing and oxidizing atmospheres (800 °C/300 h), joints remained tight and dense, indicating a better aging performance. This technique eliminates the CuO-induced issues, which may extend lifetimes for SOFC/SOEC stacks and other ceramic/metal joining applications.


1993 ◽  
Vol 34 (12) ◽  
pp. 2099-2104 ◽  
Author(s):  
G.M. Brown ◽  
K. Shimizu ◽  
K. Kobayashi ◽  
G.E. Thompson ◽  
G.C. Wood

1995 ◽  
Vol 38 (8) ◽  
pp. 1465-1471 ◽  
Author(s):  
M Depas ◽  
B Vermeire ◽  
P.W Mertens ◽  
R.L Van Meirhaeghe ◽  
M.M Heyns

1984 ◽  
Vol 23 (Part 1, No. 3) ◽  
pp. 283-285 ◽  
Author(s):  
Teruya Shinjo ◽  
Takashi Iwasaki ◽  
Toshihiko Shigematsu ◽  
Toshio Takada

2011 ◽  
Vol 107 (3) ◽  
Author(s):  
Na Cai ◽  
Guangwen Zhou ◽  
Kathrin Müller ◽  
David E. Starr

1976 ◽  
Vol 13 (4) ◽  
pp. 873-873 ◽  
Author(s):  
E. H. Nicollian ◽  
B. Schwartz ◽  
D. J. Coleman ◽  
R. M. Ryder ◽  
J. R. Brews

1999 ◽  
Vol 560 ◽  
Author(s):  
G. Di Francia ◽  
V. La Ferrara ◽  
L. Lancellotti ◽  
L. Quercia ◽  
T. Fasolino

ABSTRACTThe photoluminescence response of a series of porous silicon samples, obtained by electrochemical etching of n-type CZ-silicon, has been recorded in various gas environments. A quenching is reported when porous silicon is in the presence of an oxidising ambient (dry air or acetone vapours in dry air). Process reversibility depends on the duration of laser illumination. Quenching is also recorded if porous silicon is in the presence of acetone vapours in nitrogen ambient, where complete reversibility is however shown. Moreover, the peak wavelength is red shifted in dry air and blue shifted in acetone vapours. Irreversible quenching is related to the growth of a thin oxide layer on the emitting nanostrucures.


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