Binding Energy And Absorption of Donor Impurity In Spherical GaAs/AlxGa1-x As Quantum Dots With Konwent Potential

Author(s):  
E. B. Al ◽  
E. Kasapoglu ◽  
H. Sari ◽  
I. Sökmen ◽  
C. A. Duque

Abstract In this study, the electronic and optical properties of single or core/shell quantum dots, which are formed depending on the parameters in the selected Konwent potential, are investigated. Namely, the effects of the size and geometric shapes of quantum dots on the binding energy of the on-center donor impurity, the total absorption coefficient and refractive index which are including transitions between the some confined states, and the electromagnetically induced transparency between the lowest six confined states related to the donor impurity are investigated. We have used the diagonalization method by choosing a wave function based on the Bessel and Spherical Harmonics orthonormal function to find the eigenvalues and eigenfunctions of the electron confined within the quantum dots which have different types mentioned above. To calculate the optical absorption coefficients and electromagnetically induced transparency related to shallow-donor impurity, a two- and three-level approach in the density matrix expansion is used, respectively.

2010 ◽  
Vol 43 (1) ◽  
pp. 372-374 ◽  
Author(s):  
Chaojin Zhang ◽  
Zhanxin Wang ◽  
Ying Liu ◽  
Kangxian Guo

2004 ◽  
Author(s):  
Hideki Gotoh ◽  
Hidehiko Kamada ◽  
Tadashi Saitoh ◽  
Hiroaki Ando ◽  
Jiro Temmyo

2020 ◽  
Vol 330 ◽  
pp. 01012
Author(s):  
Walid Belaid ◽  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.


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