Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2021.2945 ◽

2021 ◽

Vol 16 (1) ◽

pp. 97-103

Author(s):

Xin-Nan Li ◽

Guang-Xin Wang ◽

Xiu-Zhi Duan

Keyword(s):

Hydrostatic Pressure ◽

Binding Energy ◽

Electric Field ◽

Quantum Wells ◽

Variational Approach ◽

Coupled Quantum Wells ◽

Zinc Blende ◽

Impurity Interaction ◽

The Right ◽

Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

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Binding energy of shallow donor impurity in asymmetric quantum wells

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2010.08.011 ◽

2010 ◽

Vol 43 (1) ◽

pp. 372-374 ◽

Cited By ~ 10

Author(s):

Chaojin Zhang ◽

Zhanxin Wang ◽

Ying Liu ◽

Kangxian Guo

Keyword(s):

Binding Energy ◽

Quantum Wells ◽

Shallow Donor ◽

Donor Impurity ◽

Asymmetric Quantum

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The magnetic field dependence of shallow donor impurity states in GaAs/GaAlAs multi-quantum wells: a non-variational approach

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/6/3/016 ◽

1994 ◽

Vol 6 (3) ◽

pp. 757-770 ◽

Cited By ~ 9

Author(s):

T Kuhn ◽

G Mahler ◽

J L Dunn ◽

C A Bates

Keyword(s):

Magnetic Field ◽

Quantum Wells ◽

Field Dependence ◽

Variational Approach ◽

Magnetic Field Dependence ◽

Shallow Donor ◽

Donor Impurity ◽

Impurity States ◽

The Magnetic Field

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Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

International Journal of Modern Physics B ◽

10.1142/s0217979216501393 ◽

2016 ◽

Vol 30 (22) ◽

pp. 1650139

Author(s):

E. B. Al ◽

F. Ungan ◽

U. Yesilgul ◽

E. Kasapoglu ◽

H. Sari ◽

...

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Effective Mass ◽

Variational Approach ◽

Nitrogen Concentration ◽

Effective Mass Approximation ◽

Donor Impurity ◽

Transition Energies ◽

Mass Approximation ◽

Single Formula

The effects of nitrogen and indium concentrations on the [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]-like donor impurity energy states in a single [Formula: see text] quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.

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Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

Journal of Modeling and Simulation of Materials ◽

10.21467/jmsm.4.1.1-6 ◽

2021 ◽

Vol 4 (1) ◽

pp. 1-6

Author(s):

Redouane En-nadir ◽

Haddou El Ghazi ◽

Anouar Jorio ◽

Izeddine Zorkani

Keyword(s):

Binding Energy ◽

Quantum Wells ◽

Ground State ◽

Shallow Donor ◽

Effect Of Temperature ◽

Position Effects ◽

Coupled Quantum Wells ◽

Impurity Position ◽

Mass Approximation ◽

Donor Binding Energy

In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

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BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

Surface Review and Letters ◽

10.1142/s0218625x02004347 ◽

2002 ◽

Vol 09 (05n06) ◽

pp. 1753-1756 ◽

Cited By ~ 23

Author(s):

A. MONTES ◽

A. L. MORALES ◽

C. A. DUQUE

Keyword(s):

Wave Function ◽

Hydrostatic Pressure ◽

Binding Energy ◽

Electric Field ◽

Quantum Wells ◽

Applied Electric Field ◽

Shallow Donor ◽

Donor Impurity ◽

External Hydrostatic Pressure ◽

Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

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