scholarly journals The Characterization of Amorphous AZO-n/Si-p Hetrojunction Diode for Solar Cell Application

2021 ◽  
Author(s):  
Soghra Hosseini ◽  
Laya Dejam ◽  
Hossain Elahi
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Amorphous Structure ◽  
Open Circuit ◽  
Sem Images ◽  
Solar Cell Application ◽  
Si Substrates ◽  
Reflectance Analysis

Abstract The aim of the present study is to verify the effect of annealing temperature variation on zinc oxide doped with aluminum (AZO) thin films deposited on p-type silicon (Si) substrates. Here, AZO/p-Si heterojunction was annealed in nitrogen environment and its structural, electrical, and optical characterizations were investigated. The results of XRD patterns showed the amorphous structure of AZO thin films. FE-SEM images illustrated the increase of grain size by increasing annealing temperature up to 500oC. The reflectance analysis showed that for this annealing temperature, that the energy band gap of AZO thin film was moved to higher energy level. The electrical properties were investigated by I–V measurement carried out in the light at room temperatures. The short circuit current (ISC), ideality factor, saturation current, and open circuit voltage (VOC) of the AZO/p-Si heterojunction strongly depended on annealing conditions due to charge carrier trapping and density of defect on interface. By considering IR and IF as reverse and forward current, the ration of IF/IR had the maximum value at 1 V which was belonged to n-AZO/p-Si heterojunction at 500oC annealing temperature.

Synthesis and Dye-sensitized Solar Cell Application of Polyolefinic Aromatic Molecules with Pyrene as Surface Group

2011 ◽  
Vol 64 (7) ◽  
pp. 951 ◽  
Author(s):  
Perumal Rajakumar ◽  
Kathiresan Visalakshi ◽  
Shanmugam Ganesan ◽  
Pichai Maruthamuthu ◽  
Samuel Austin Suthanthiraraj
Keyword(s):  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Surface Group ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Cell Application ◽  
Aromatic Molecules ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Synthesis of polyolefinic aromatic molecules with pyrene as the surface group, and their role as an additive in the redox couple of dye-sensitized solar cells, is described. The studies yield a promising power conversion efficiency of 5.27% with a short circuit current density of 6.50 mA cm–2, an open circuit voltage of 0.60 V, and a fill factor of 0.54 under 40 mW cm–2 simulated air mass (A.M.) 1.5 illumination. Most importantly, the photocurrent responsivity increases with an increase in the number of pyrene units on the surface.

scholarly journals Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

2018 ◽  
Vol 9 ◽  
pp. 3 ◽  
Author(s):  
Xianghua Zhang ◽  
Ilia Korolkov ◽  
Bo Fan ◽  
Michel Cathelinaud ◽  
Hongli Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chalcogenide Glass ◽  
Glass Ceramic ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Iodine Doping ◽  
P Type ◽  
Photovoltaic Solar Cells

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2–Sb2Se3–CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3and n-type Sb2Se3. The conductivity of Sb2Se3has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3and the glass-ceramic thin films give a short-circuit current density JSCof 10 mA/cm2and an open-circuit voltage VOCof 255 mV, with a power conversion efficiency of about 0.9%.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

Effects of Deposition Parameters on the Structure and Photovoltaic Performance of Si Thin Films by Metal Induced Growth

2008 ◽  
Vol 1123 ◽  
Author(s):  
Peter T. Mersich ◽  
Shubhranshu Verma ◽  
Wayne A. Anderson ◽  
Rossman F. Giese
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
X Ray ◽  
Metal Induced Growth

AbstractA metal-induced growth (MIG) process was employed to deposit thin films of microcrystalline silicon (μc-Si) for solar cell applications. Due to different grain orientations of the crystals, the absorption coefficient of μc-Si is about 10 times higher than the absorption coefficient of single crystalline Si. The properties of the Si film were investigated resulting from variations in several parameters. A range of Ni and Co thicknesses were examined from 7.5 nm to 60 nm including combinations of the two, while the dc sputtering power was stepped up from 150 W to 225 W. The structure of the resulting film was studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD). SEM of the film revealed that 5 hr of Si deposition at 150 W yields a film thickness of 6.5 μm and a maximum grain size of about 0.6 μm. EDS data showed that at the middle of the Si film the atomic percentage of the Si was 99.17%. XRD data showed that the dominant crystal orientation is {220}. To characterize the photovoltaic properties of the μc-Si, Schottky photodiodes were fabricated. Ni alone as the seed layer resulted in ohmic behavior. With Co only, MIG formed a rectifying contact with open-circuit voltage (V∝). The combination of Co layered over Ni formed better thin films and gave a Voc of 0.24 V and short-circuit current density (Jsc) of 5.0 mA/cm2 since the Co prevents Ni contamination of the top of the grown Si layer.

Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films

NANO ◽  
2016 ◽  
Vol 11 (07) ◽  
pp. 1650077 ◽  
Author(s):  
N. Koteeswara Reddy ◽  
M. Devika ◽  
K. R. Gunasekhar ◽  
E. S. R. Gopal
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Zno Nanostructures ◽  
Photovoltaic Properties ◽  
Thermal Evaporation Method ◽  
Sns Thin Films

The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited significant light conversion efficiency with an open circuit voltage and short circuit current of 350[Formula: see text]mV and 5.14[Formula: see text]mA, respectively.

Influence of deposition time and annealing treatments on the properties of chemically deposited Sn2Sb2S5 thin films and photovoltaic behavior of Sn2Sb2S5-based solar cells

2020 ◽  
Vol 75 (10) ◽  
pp. 887-901
Author(s):  
Patrick Akata Nwofe ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Short Circuit ◽  
Cadmium Sulphide ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Optical Absorption Coefficient ◽  
Soda Lime Glass ◽  
X Ray

AbstractThin films of chemical bath deposited tin antimony sulphide (Sn2Sb2S5) were tuned by varying the deposition time between 1 and 3 h, and postdeposition heat treatments. The films were grown on soda lime glass (SLG) and on molybdenum glass (Mo-SLG) substrates, respectively. The film thickness increased with deposition time up to 2 h and decreased thereafter. Structural analysis from X-ray diffractometry showed that the films were single phase. This was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. Energy-dispersive spectroscopy results give antimony/sulphur (Sb/S) ratio and antimony/tin (Sb/Sn) ratio that increased with deposition time in the SLG substrates only. Optical constants extracted from optical spectroscopy measurements give optical absorption coefficient (α) > 104 cm−1, and direct energy bandgap with values in the range 1.30 to 1.48 eV. The Hall effect measurements performed on films grown on the SLG substrates indicated that the films were p-type electrical conductivity with electrical resistivity in the range 103 to 104 Ωcm. The films grown on the Mo-SLG served as absorber layers to fabricate thin film heterojunction solar cell devices in the substrate configuration with a cadmium sulphide (CdS) window partner. The best device yielded a short-circuit current density of 20 mA/cm2, open-circuit voltage of 0.012 V and a solar conversion efficiency of 0.04%.

scholarly journals ZnO Characterization of ZnO/GaAs heterojunction

2019 ◽  
Vol 17 (43) ◽  
pp. 58-66
Author(s):  
Eman M. Nasir
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Energy Gap ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Band Gap Energy ◽  
Open Circuit ◽  
Zno Thin Films ◽  
Pulse Laser Deposition Technique ◽  
Annealing Temperatures

ZnO thin films have been prepared by pulse laser deposition technique at room temperatures (RT). These films were deposited on GaAs substrate to form the ZnO/GaAs heterojunction solar cell. The effect of annealing temperatures at ( RT,100, 200)K on structural and optical properties of ZnO thin films has been investigated. The X-ray diffraction analysis indicated that all films have hexagonal polycrystalline structure. AFM shows that the grains uniformly distributed with homogeneous structure. The optical absorption spectra showed that all films have direct energy gap. The band gap energy of these films decreased with increasing annealing temperatures.  From the electrical properties, the carriers have n-type conductivity.  From C-V measurement of ZnO/GaAs heterojunciton solar cell at frequency 100, 200 KHz, It is found that built–in potential (Vbi) increases with increase frequency. Also, from I-V characteristic it is observed that the ideality factor is 2.7. Short-circuit current (Isc) is 4.0mA/cm2, open circuit voltage (Voc) is 0.5V, fill factor ( F.F) is 0.7  and the efficiency is about 6.0 %.

Electrical, Thermoelectrical and PEC Studies of Copper Doped CdSe Thin Films

2020 ◽  
Vol 6 (5) ◽  
pp. 60-66
Author(s):  
V D Bhabad
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Short Circuit ◽  
Electrical Conductance ◽  
Short Circuit Current ◽  
Dip Coating ◽  
Open Circuit ◽  
Steel Plates ◽  
Room Temperature Sample ◽  
Dip Coating Technique

Copper doped CdSe thin films of various composition (0.1-1.0 mol %) deposited by dip coating technique on clean glass substrate at room temperature. Sample prepared on stainless steel plates have been applied for PEC characterization. The electrical conductance at 300K enhances as the amount of copper raises up to 0.1 mol % and later magnitude shrinks for greater amount.Copperr doped samples demonstrates n-kind conductance. As temperature rise conductivity also rises confirming semiconducting nature of sample. Activation energy reduces up to 0.1 mol % and enhances at higher copper amount. Thermoelectric power increases up to 0.1 mol % copper dopant sample and later decreases. The rise in thermoelectric power with rise in temperature confirming the uniform characterof the sample. The various performance parameter of PEC were examined with respect to varing dopant amount. Fill factor, ideality factor, short circuit current, open circuit voltage, and solar energy conversion enhances up to 0.1 mol% copper amount then reduces. The utility of this work is in improving the efficiency of PEC cell. The efficiency of doped sample is greater than undoped cadmium selenide.

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