Strengthening Κ-Carbide Steels Using Residual Dislocation Content

2021 ◽  
Author(s):  
Thomas Wei Jie Kwok ◽  
Khandaker Mezanur Rahman ◽  
Vassili A. Vorontsov ◽  
David Dye
Keyword(s):  
Dislocation Content

scholarly journals Disclinations and disconnections in minerals and metals

2019 ◽  
Vol 117 (1) ◽  
pp. 196-204 ◽  
Author(s):  
John P. Hirth ◽  
Greg Hirth ◽  
Jian Wang
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Grain Boundary Sliding ◽  
Boundary Sliding ◽  
Dislocation Content

A different type of defect, the coherency disclination, is added to disclination types. Disconnections that include disclination content are considered. A criterion is suggested to distinguish disconnections with dislocation content from those with disclination content. Electron microscopy reveals unit disconnections in a low albite grain boundary, defects important in grain boundary sliding. Disconnections of varying step heights are displayed and shown to define both deformed and recovered structures.

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (No. 14) ◽  
pp. L307-L310 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Akria Bandoh ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Dislocation Content

The Structure of a Near Coincidence Σ=5, [001] Twist Boundary in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
Mark Vaudin ◽  
Dieter Ast
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Structure ◽  
Lattice Theory ◽  
Small Deviation ◽  
Twist Boundary ◽  
Transmission Electron ◽  
Primary Dislocation ◽  
Dislocation Content

ABSTRACTThe dislocation structure of a near coincidence Σ=5 [001]twist boundary in silicon was studied using transmission electron microscopy. Secondary dislocations, with localized cores, were observed in the boundary accommodating a small deviation (<.5°) from perfect coincidence. The O-lattice theory for general low angle boundaries was extended to calculate the expected dislocation content of near coincidence boundaries. Comparison between predictions and observations was used to deduce information on the primary dislocation structure of the boundary.

Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers

2013 ◽  
Vol 205-206 ◽  
pp. 65-70
Author(s):  
Ali Ghaderi ◽  
Semih Senkader
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Structural Defects ◽  
Limiting Factor ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Etch Pit ◽  
Process Characterization ◽  
Crystallisation Process ◽  
Dislocation Content

A major performance limiting factor of multicrystalline silicon wafers is structural defects, mainly dislocations, reducing solar cell efficiency. Dislocations are formed during crystallisation process. Characterization of dislocation-content is necessary both to optimise the crystallisation and to eliminate bad wafers before cell processing. We developed two techniques to characterise dislocations: conventional etch-pit counting modified for full size wafers using a new etch-recipe and a novel etch-pit counting algorithm. Secondly we developed a technique to estimate the dislocation content directly from photoluminescence images of as-cut wafers.

scholarly journals Dislocation Content of Non-Classical Twin Boundaries in Hexagonal Metals

2018 ◽  
Vol 134 (3) ◽  
pp. 692-694 ◽  
Author(s):  
V. Paidar ◽  
A. Ostapovets ◽  
T. Káňa
Keyword(s):  
Twin Boundaries ◽  
Dislocation Content ◽  
Hexagonal Metals
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