scholarly journals Improving Optical Transmission of Indium Tin Oxide (ITO) thin films prepared by Femtosecond Laser ablation

2011 ◽  
Vol 34 (2) ◽  
pp. 99-109
2013 ◽  
Vol 4 ◽  
pp. 40601 ◽  
Author(s):  
S. Krause ◽  
P. T. Miclea ◽  
F. Steudel ◽  
S. Schweizer ◽  
G. Seifert

2013 ◽  
Vol 45 ◽  
pp. 395-401 ◽  
Author(s):  
Qiumei Bian ◽  
Xiaoming Yu ◽  
Baozhen Zhao ◽  
Zenghu Chang ◽  
Shuting Lei

2018 ◽  
Vol 124 (2) ◽  
Author(s):  
Hoon-Young Kim ◽  
Won-Suk Choi ◽  
Suk-Young Ji ◽  
Young-Gwan Shin ◽  
Jin-Woo Jeon ◽  
...  

1999 ◽  
Vol 350 (1-2) ◽  
pp. 79-84 ◽  
Author(s):  
F.O. Adurodija ◽  
H. Izumi ◽  
T. Ishihara ◽  
H. Yoshioka ◽  
K. Yamada ◽  
...  

2012 ◽  
Vol 545 ◽  
pp. 393-398 ◽  
Author(s):  
Mohammed Khalil Mohammed Ali ◽  
K. Ibrahim ◽  
M.Z. Pakhuruddin ◽  
M.G. Faraj

This work describe the optical and electrical properties of indium tin oxide (ITO) thin films prepared by thermal evaporation method on flexible plastic substrate (polyethylene terephthalate (PET)). The optical transmission and absorption of ITO films in the visible and UV rang have been studied. The resistivity, sheet resistant, carrier concentration and mobility have been evaluated by Hall Effect measurement. The surface morphology and roughness were investigated by atomic force microscopy (AFM). The results indicate that the optical transmission greater than 85% over the visible rang and it was found to be strongly dependent on the thickness of ITO films. The Resistivity and sheet resistant with low values (10-4Ω-cm, 9.22 Ω/ respectively) were obtained and ties values were increased with ITO thin films thickness increasing .AFM investigation showed that the roughness surface of (8 – 30) RMS have been obtained over different thickness of ITO films. The obtained results of the deposited films by this method were analyzed. Details of sample preparation, experimental methods and results are given and discussed.


2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.


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