ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Polyimide as a Plastic Substrate for the Flexible Organic Electroluminescent Device

2004 ◽  
Vol 814 ◽  
Author(s):  
Jin-Woo Park ◽  
Youngkyoo Kim ◽  
Hyuntaek Lim ◽  
Cheol Min Bae ◽  
Il Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Plastic Substrate ◽  
Flexible Substrates ◽  
Planar Magnetron ◽  
Organic Electroluminescent ◽  
Ito Thin Films ◽  
Substrate Properties

AbstractIn this work, transparent flexible substrates based on polyimides(PI) with indium tin oxide (ITO) thin films for organic electroluminescent devices have been prepared. 2,2'-bis-(3,4- dicarboxyphenyl) hexafluoropropanedianhydride (6FDA) and 2,2'-bis-(trifluoromethyl)-4,4'- diaminobiphenyl (TFDB) PI films were used for transparent flexible substrates. ITO thin films were prepared at two substrate deposition temperatures of 25°C and 150°C with a typical radio- frequency (r.f.) planar magnetron sputtering system. The sheet resistance and the optical transmission properties of the fluorinated PI substrate were comparable with those for the slide glass substrate. The substrate properties are better when the deposition temperature is higher. SiO2 coating onto the fluorinated PI substrate by sol-gel reaction was also attempted to improve the optical transmission of the ITO/PI substrate. It was found that the coating of SiO2 affected on the morphology of the PI substrates.

scholarly journals Enhancement of Electrical Properties of Sol–Gel Indium–Tin–Oxide Films by Microwave Irradiation and Plasma Treatment

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1167
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Microwave Irradiation ◽  
Plasma Treatment ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
X Ray ◽  
Ito Thin Films ◽  
Ar Plasma

We proposed the enhancement of the electrical properties of solution-processed indium–tin–oxide (ITO) thin films through microwave irradiation (MWI) and argon (Ar) gas plasma treatment. A cost- and time-effective heat treatment through MWI was applied as a post-deposition annealing (PDA) process to spin-coated ITO thin films. Subsequently, the sheet resistance of MWI ITO thin films was evaluated before and after plasma treatment. The change in the sheet resistance demonstrated that MWI PDA and Ar plasma treatment significantly improved the electrical properties of the ITO thin films. Furthermore, X-ray photoelectron spectroscopy and X-ray diffraction analyses showed that the electrical properties of the ITO thin films were enhanced by the increase in oxygen vacancies due to the ion bombardment effect of high-energy plasma ions during Ar plasma treatment. Changes in the band gap structure of the ITO thin film due to the ion bombardment effect were also analyzed. The combination of MWI PDA and Ar plasma treatment presents new possibilities for improving the high-conductivity sol–gel ITO electrode.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

scholarly journals Shedding Light on Phase Stability and Surface Engineering of Formamidinium Lead Iodide (FaPbI3) Thin Films for Solar Cells

2021 ◽  
Vol 12 (1) ◽  
pp. 1
Author(s):  
Julia Marí-Guaita ◽  
Amal Bouich ◽  
Bernabé Marí
Keyword(s):  
Thin Films ◽  
Surface Engineering ◽  
Optical Analysis ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
X Ray ◽  
Structure Surface ◽  
Uv Visible ◽  
The Stability ◽  
Humidity Environment

In this work, FAPbI3 thin films with different antisolvents (toluene, diethyl ether and chlorobenzene) were successfully elaborated by the spin coating technique to study the influence of the different antisolvents in the films. The crystal structure, surface morphology and optical properties were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) photoluminescence and UV–visible spectrometry. According to XRD, the crystalline structure of FAPbI3 was found in the orientation of the (110) plane, and it is observed that the type of antisolvent content in the absorber layer plays an important role in the growth and stabilization of the film. Here, chlorobenzene leads to a smooth and homogenous surface, a large grain size and a pinhole-free perovskite film. Additionally, the optical analysis revealed that the band gap is in the range from 1.55 to 1.57 eV. Furthermore, in an approximately 60% humidity environment and after two weeks, the stability and absorption of FaPbI3 showed low degradation.

scholarly journals Effect of Re and Tm-site on morphology structure and optical band gap of ReTmO3 (Re: La, Ce, Nd, Gd, Dy, Y and Tm: Fe, Cr) prepared by sol-gel method

2018 ◽  
Vol 64 (4) ◽  
pp. 381
Author(s):  
Muhammad Tufiq Jamil ◽  
Javed Ahmad ◽  
Syed Hamad Bukhari ◽  
Murtaza Saleem
Keyword(s):  
Band Gap ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
Orthorhombic Crystal ◽  
X Ray ◽  
Average Grain Size ◽  
Auto Combustion ◽  
Uv Visible

Rare earth nano sized pollycrystalline orthoferrites and orthocromites ReT mO3 (Re = La, Nd, Gd, Dy, Y and T m = Fe, Cr) have been synthesized by sol-gel auto combustion citrate method. The samples have been characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), and UV-visible spectroscopy. The samples are single phase as confirmed by XRD analysis and correspond to the orthorhombic crystal symmetry with space group pbnm. Debye Scherer formula and Williamson Hall analysis have been used to calculate the average grain size which is consistent with that of determined from SEM analysis and varied between 25-75 nm. The elemental compositions of all samples have been checked by EDX analysis. Different crystallographic parameters are calculated with strong structural correlation among Re and Tm sites. The optical energy band gap has been calculated by using Tauc relation estimated to be in the range of 1.77 - 1.87 eV and 2.77 - 3.14 eV, for ReFeO3 and ReCrO3, respectively.

ZnO-SiO2/Laponite Photocatalyst: Kinetic Study on Photocatalytic Decolorization of Methylene Blue

2014 ◽  
Vol 896 ◽  
pp. 541-544
Author(s):  
Is Fatimah ◽  
N. Nunani Yuyun
Keyword(s):  
Methylene Blue ◽  
Energy Dispersive Spectrometry ◽  
Photocatalytic Performance ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Photocatalytic Decolorization ◽  
Uv Visible ◽  
Gel Preparation ◽  
Adsorption Desorption

ZnO-SiO2/Laponite was prepared by sol-gel preparation procedure consit of SiO2 pillarization to laponite followed by ZnO dispersion by using zinc acetate as precursor. The obtained material was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), diffuse reflectance UV-Visible (DRUV-Vis) and N2 adsorption-desorption analysis. The photocatalytic performance of the amterial in methylene blue decolorization was also investigated. Compared with ZnO-SiO2 nanoparticles, it is concluded that ZnO-SiO2/Laponite possess higher photocatalytic activity which obey Temkin isotherm model.

Preparation of YBCO Superconducting Films by Sol-Gel Process

2007 ◽  
Vol 546-549 ◽  
pp. 2007-2010
Author(s):  
Gao Yang Zhao ◽  
Huang Li Zhang ◽  
Ren Zhong Xue ◽  
Yuan Qing Chen ◽  
Li Lei
Keyword(s):  
Sol Gel ◽  
Precursor Solution ◽  
Superconducting Films ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Organic Salts ◽  
Ybco Films ◽  
X Ray ◽  
Sol Gel Process ◽  
Ybco Superconducting Films

precursor solution was prepared using barium trifluoroacetae (Ba-TFA) and non-fluorine yttrium (Y) and copper (Cu) organic salts. The precursor solution was modified by benzalacetone (BzAcH), in which the Cu2+ were chelated with BzAcH, which preventing the loss of Cu in the pyrolysis process. Dense YBCO superconducting films with smooth surface, which confirmed by scanning electron microscopy (SEM), were repeatedly obtained through sol-gel process. X-ray diffraction (XRD) 2θ scanning and φ scanning indicated that the as-prepared YBCO films had good c-axis texture. YBCO films with superconducting transition temperature (TC) above 89K were obtained.

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