One-Dimensional Ordering of Self-assembled Ge Dots on Photolithographically Patterned Structures on Si (001)

2002 ◽  
Vol 715 ◽  
Author(s):  
B. Yang ◽  
A.R. Woll ◽  
P. Rugheimer ◽  
M.G. Lagally
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Plasma Etching ◽  
Spatial Arrangement ◽  
High Temperature Annealing ◽  
Strain Relief ◽  
One Dimensional ◽  
Patterned Structures ◽  
Enhanced Strain ◽  
Self Assembled

AbstractWe report spatial arrangement of self-assembled Ge quantum dots on patterned structures on Si (001) without using complicated lithography. Starting from stripes and mesas fabricated by conventional lithography and plasma etching, we prepare sinusoidal Si stripes with narrow ridges and mesas with humped edges via high-temperature annealing. Deposited Ge self-assembles into coherent nanocrystals that align along the narrow ridges of the stripes and the sloped mesa edges. Enhanced strain relief at the ridges due to elastic relaxation and the high step densities on the shallow slopes at the edges are likely causes of nanocrystal alignment.

scholarly journals Ion Synthesis: Si-Ge Quantum Dots

2018 ◽  
Vol 52 (5) ◽  
pp. 516
Author(s):  
N.N. Gerasimenko ◽  
N.S. Balakleyskiy ◽  
A.D. Volokhovskiy ◽  
D.I. Smirnov ◽  
O.A. Zaporozhan
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Temperature Region ◽  
Ion Beam ◽  
Self Organization ◽  
High Temperature Annealing ◽  
Ion Energies ◽  
Ion Beam Implantation ◽  
Ge Quantum Dots

AbstractWe present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10^14 to 10^17 cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Indium Composition ◽  
Cap Layer ◽  
Self Assembled ◽  
The Impact

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

Tuning the bandgap of graphene quantum dots by gold nanoparticle-assisted O2 plasma etching

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 97853-97860 ◽  
Author(s):  
Zibo Li ◽  
Zhengshun Li ◽  
Yutong Wu ◽  
Jingjie Nan ◽  
Haiyu Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Plasma Treatment ◽  
Gold Nanoparticle ◽  
Plasma Etching ◽  
Graphene Quantum Dots ◽  
Self Assembled ◽  
O2 Plasma

GQDs were fabricated by O2 plasma treatment with self-assembled gold nanoparticle monolayers as etching masks and investigated through TA spectroscopy.

One-dimensional arrays of self-assembled InAs/InP quantum dots

2000 ◽  
Author(s):  
Jacques Lefebvre ◽  
Philip J. Poole ◽  
John P. McCaffrey ◽  
Boris Lamontagne ◽  
Geof C. Aers ◽  
...  
Keyword(s):  
Quantum Dots ◽  
One Dimensional ◽  
Self Assembled ◽  
Inp Quantum Dots

Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer

2008 ◽  
Vol 103 (12) ◽  
pp. 123522 ◽  
Author(s):  
Q. Wang ◽  
T. Wang ◽  
J. Bai ◽  
A. G. Cullis ◽  
P. J. Parbrook ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Optical Investigation ◽  
Self Assembled ◽  
Aln Buffer

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

1996 ◽  
Vol 69 (20) ◽  
pp. 3072-3074 ◽  
Author(s):  
A. O. Kosogov ◽  
P. Werner ◽  
U. Gösele ◽  
N. N. Ledentsov ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
High Temperature ◽  
High Temperature Annealing ◽  
Structural And Optical Properties

scholarly journals Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

2015 ◽  
Vol 44 (5) ◽  
pp. 1338-1343 ◽  
Author(s):  
William A. O’Brien ◽  
Meng Qi ◽  
Lifan Yan ◽  
Chad A. Stephenson ◽  
Vladimir Protasenko ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Self Assembled

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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