Диэлектрическая релаксация в тонких слоях стеклообразной системы Ge-=SUB=-28.5-=/SUB=-Рb-=SUB=-15-=/SUB=-S-=SUB=-56.5-=/SUB=-
Keyword(s):
AbstractThe results of studying dielectric relaxation processes in the Ge_28.5Pb_15S_56.5 glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy E _ p = 0.40 eV and the molecular dipole moment μ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as D ^+ and D ^–.
2013 ◽
Vol 34
(0)
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pp. 59-63
1995 ◽
Vol 97-98
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pp. 97-102
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Keyword(s):
2009 ◽
Vol 283-286
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pp. 533-538
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1989 ◽
Vol 90
(2)
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pp. 912-922
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Keyword(s):
1973 ◽
Vol 59
(3)
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pp. 1517-1522
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