scholarly journals Выявление пространственного и квантового ограничения Si-наночастиц, нанесенных методом лазерного электродиспергирования на кристаллический Si

Author(s):  
М.М. Соболев ◽  
О.С. Кен ◽  
О.М. Сресели ◽  
Д.А. Явсин ◽  
С.А. Гуревич

AbstractC – V characteristics and DLTS spectra of heterostructures made up of layers of closely packed amorphous Si nanoparticles deposited by laser electrodispersion onto single-crystal p -Si substrates have been examined. The patterns observed in the behavior of the C – V characteristics and DLTS spectra measured in the dark and under illumination with white light at various bias pulse voltages U _ b and filling pulse voltages U _ f suggest that the spatially localized amorphous Si nanoparticles have an average size of less than 2 nm, which is comparable with the de Broglie electron wavelength, and are characterized by quantum confinement. The ground and excited states of quantum dots are formed and exhibit the Stark effect and effects of electricdipole and controllable metastable occupancy under illumination.

2020 ◽  
Vol 3 (3) ◽  
pp. 2813-2821
Author(s):  
Jacopo Parravicini ◽  
Francesco Di Trapani ◽  
Michael D. Nelson ◽  
Zachary T. Rex ◽  
Ryan D. Beiter ◽  
...  

2007 ◽  
Vol 31 ◽  
pp. 71-73
Author(s):  
X.H. Zhang ◽  
Soo Jin Chua ◽  
A.M. Yong ◽  
S.Y. Chow ◽  
H.Y. Yang ◽  
...  

Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and timeintegrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.


2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.


2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso

2005 ◽  
Vol 87 (5) ◽  
pp. 053102 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Ho-Sang Kwack ◽  
Byung Seok Choi ◽  
...  

2015 ◽  
Vol 34 ◽  
pp. 73-78
Author(s):  
Irtiqa Syed ◽  
Santa Chawla

A novel one pot synthesis approach in oleic acid medium was employed to obtain monophasic ZnSe quantum dots (QD) of average size 3.7nm. The QDs were well crystalline in hexagonal phase as revealed by x-ray diffraction and high resolution transmission electron microscopy (HRTEM) studies. The ZnSe QDs exhibit sharp emission peak in the blue (465nm) with 385picosecond fluorescence decay time. The theoretical band gap corresponding to 3.7nm ZnSe QDs matched well with the measured 3.11eV band gap of synthesized QDs which thus showed quantum confinement effect.


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