Температурное падение эффективности мощных синих InGaN/GaN-светодиодов
2020 ◽
Vol 46
(24)
◽
pp. 45
Keyword(s):
The thermal droop of external quantum efficiency (EQE) at maximum in blue InGaN/GaN LEDs at j < 10 A/cm2 is caused by increasing losses related to non-radiative recombination due to carrier tunneling with the assistance of phonons and traps, enhancing by a temperature growth up to 400 K. When a p-n junction opens at j > 40 A/cm2, the EQE droop under direct current and at pulse mode is due to the losses associated with non-equilibrium filling of the states related to lateral alloy non-uniformities in quantum wells situated outside of the depletion region by delocalized carriers as well as the losses due to the interactions between delocalized carriers and extended defects.
1990 ◽
Vol 46
(2)
◽
pp. 147-154
◽
Keyword(s):
2007 ◽
Vol 49
(6)
◽
pp. 1175-1183
◽
Keyword(s):
2019 ◽
1999 ◽
Vol 38
(Part 1, No. 4B)
◽
pp. 2552-2554
◽
Keyword(s):
2021 ◽
Keyword(s):