scholarly journals Гибридный фотоприемник среднего инфракрасного диапазона на основе полупроводниковых квантовых ям

Author(s):  
В.С. Кривобок ◽  
А.Д. Кондорский ◽  
Д.А. Пашкеев ◽  
Е.А. Екимов ◽  
А.Д. Шабрин ◽  
...  

A hybrid mid-infrared photodetector has been implemented, in which silicon carbide (SiC) particles are used to increase the interaction of the electromagnetic field with the electronic subsystem of quantum wells. On the basis of direct measurements of infrared photoconductivity and calculations within the framework of the finite difference method in the time domain, it is shown that this approach makes it possible to increase the sensitivity of such infrared photodetector to electromagnetic radiation by reversing the direction of polarization of the electric field, including in the near zone of SiC particles.

2006 ◽  
Vol 952 ◽  
Author(s):  
Xuecong Zhou ◽  
Shengkun Zhang ◽  
Hong Lu ◽  
Aidong Shen ◽  
Wubao Wang ◽  
...  

ABSTRACTRecently, lattice-matched Zn0.46Cd0.54Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 μm to a few tens of μm.In this work, two heavily doped n-Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ∼ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ∼ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 μm and 5.35 μm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3-5 Åm range, which is of great interest for the infrared photodetector applications.


1992 ◽  
Vol 39 (11) ◽  
pp. 2646
Author(s):  
E.B. Dupont ◽  
D. Delacourt ◽  
M. Papuchon

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  

1996 ◽  
Vol 19 (1) ◽  
pp. 69-79 ◽  
Author(s):  
F.H. Julien ◽  
Z. Moussa ◽  
P. Boucaud ◽  
Y. Lavon ◽  
A. Sa'ar ◽  
...  

Author(s):  
Yoav Lavon ◽  
Amir Sa’ar ◽  
Francois H. Julien ◽  
Jean-Pierre Leburton ◽  
Richard Planel

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2695
Author(s):  
Chang Liu ◽  
Xuan Zuo ◽  
Shaohui Xu ◽  
Lianwei Wang ◽  
Dayuan Xiong

We propose a stacked dual-band quantum well infrared photodetector (QWIP) integrated with a double-layer gold disk. Two 10-period quantum wells (QW) operating at different wavelengths are stacked together, and gold nano-disks are integrated on their respective surfaces. Numerical calculations by finite difference time domain (FDTD) showed that the best enhancement can be achieved at 13.2 and 11.0 µm. By integrating two metal disks, two plasmon microcavity structures can be formed with the substrate to excite localized surface plasmons (LSP) so that the vertically incident infrared light can be converted into electric field components perpendicular to the growth direction of the quantum well (EZ). The EZ electric field component can be enhanced up to 20 times compared to the incident light, and it is four times that of the traditional two-dimensional hole array (2DHA) grating. We calculated the enhancement factor and coupling efficiency of the device in the active region of the quantum well. The enhancement factor of the active region of the quantum well on the top layer remains above 25 at the wavelength of 13.2 μm, and the enhancement factor can reach a maximum of 45. Under this condition, the coupling efficiency of the device reaches 2800%. At the wavelength of 11.0 μm, the enhancement factor of the active region of the quantum well at the bottom is maintained above 6, and the maximum can reach about 16, and the coupling efficiency of the device reaches 800%. We also optimized the structural parameters and explored the influence of structural changes on the coupling efficiency. When the radius (r1, r2) of the two metal disks increases, the maximum coupling efficiency will be red-shifted as the wavelength increases. The double-layer gold disk structure we designed greatly enhances the infrared coupling of the two quantum well layers working at different wavelengths in the dual-band quantum well infrared photodetector. The structure we designed can be used in stacked dual-band quantum well infrared photodetectors, and the active regions of quantum wells working at two wavelengths can enhance the photoelectric coupling, and the enhancement effect is significant. Compared with the traditional optical coupling structure, the structure we proposed is simpler in process and has a more significant enhancement effect, which can meet the requirements of working in complex environments such as firefighting, night vision, and medical treatment.


2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  

Optica ◽  
2016 ◽  
Vol 3 (9) ◽  
pp. 979 ◽  
Author(s):  
Xuechao Yu ◽  
Zhaogang Dong ◽  
Joel K W Yang ◽  
Qi Jie Wang

Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Ju. V. Vandyshev ◽  
Z. Xu ◽  
C. W. Rella ◽  
...  

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