scholarly journals GaN Based HEMT Power Amplifier Design with 44.5dBm Output Power Operating at 5-7GHz

2021 ◽  
Vol 40 (4) ◽  
pp. 883-888
Author(s):  
Syed Mudassir Hussain ◽  
Talha Mir
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Frequency Band ◽  
High Power ◽  
Power Level ◽  
Output Power Level ◽  
Specific Power ◽  
Design System ◽  
High Power Amplifier ◽  
Simulation Results

The next-generation wireless communication systems including satellite, radar, and mobile communications need application-specific power amplifiers that can operate at very high frequencies and high power with the overall minimum power consumption from the system. To meet such stringent requirements there is a rising interest in amplifier designs based on GaN transistors. This paper presents an improved design of a high power amplifier based on GaN HEMT transistor operating at the frequency band 5GHz – 7GHz with optimized output power level. The presented design is based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript, we have considered the stability of the amplifier for the whole operating frequency band, its input and output matching impedance, gain, and maximum output power. The design of the Radio Frequency (RF) power amplifier and its overall performance are carried out using an advanced design system (ADS). The simulation results of the device stability and the output power level achieved provides a good comparison with the parameters and specifications of the device used. For better correlations in the simulation results and measurements, the accuracy of passive element designs are also considered. The simulation and experiment results show that the designed high power amplifier has achieved an output power level of 44.5 dBm at 1 dB compression point.

scholarly journals Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth

2020 ◽  
pp. 166-170
Author(s):  
Syed Mudassir Hussain
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Power Efficiency ◽  
Satellite Communication ◽  
Design System ◽  
Passive Element ◽  
Power Efficient ◽  
Power Added Efficiency ◽  
High Power Amplifier ◽  
Simulation Results

For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.

A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

2016 ◽  
Vol 8 (4-5) ◽  
pp. 691-702 ◽  
Author(s):  
Rocco Giofré ◽  
Paolo Colantonio ◽  
Elisa Cipriani ◽  
Franco Giannini ◽  
Laura Gonzalez ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
High Power ◽  
Continuous Wave ◽  
Power Level ◽  
Operating Mode ◽  
Satellite System ◽  
Output Power Level ◽  
Gain Compression ◽  
Satellite Navigation System

This paper describes the development of an L-Band (f0= 1.575 GHz) high power and efficient solid state power amplifier (SSPA) designed for the European satellite navigation system (i.e. Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The aim of the project is to offer, using as much as possible European technologies, a valid alternative to replace traveling wave tube amplifiers with more compact and reliable systems. All the SSPA functionalities, i.e. power supply, power conditioning and radio frequency amplification, are integrated in the developed architecture and accommodated in a single box with limited volume and mass. The required output power level is achieved by parallelizing several GaN die power bars of 12 and/or 25.6 mm. In continuous wave operating mode, the overall SSPA delivers an output power higher than 250 W at less than 2 dB of gain compression in the whole E1-band. Moreover, the registered gain and efficiency are higher than 67 dB and 54%, respectively.

Design of Yb Fiber High Power Amplifier through 915nm Pumping

2011 ◽  
Vol 282-283 ◽  
pp. 42-46
Author(s):  
Zhi Qiang Zhang ◽  
Jian Hua Ren ◽  
Shu Qun Shen ◽  
Tong Gang Zhao
Keyword(s):  
Pump Power ◽  
Output Power ◽  
Power Amplifier ◽  
Rate Equation ◽  
High Power ◽  
Fiber Length ◽  
Gain Medium ◽  
Pump Source ◽  
High Power Amplifier ◽  
Single Emitter

Analyze the fiber amplified theory and obtain the transmission formula of pump and signal for the use of rate equation. In the experiment, take the Yb-doped double cladding fiber based on phosphor silicate as gain medium, high power single emitter in 915nm as pump source. According to gain fiber length obtained by the theory analyses, the output power achieves 20W above. Apply the cladding power stripper at the output end for stripping the remained pump power.

An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency

2018 ◽  
Author(s):  
Rocco Giofre ◽  
Ferdinando Costanzo ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Manuela Sotgia ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Power Added Efficiency ◽  
High Power Amplifier

ISM 2.45 GHz band high-efficient 15 W GaN HEMT power amplifier: design validation

2019 ◽  
Vol 11 (7) ◽  
pp. 546-553 ◽  
Author(s):  
Marcin Góralczyk ◽  
Wojciech Wojtasiak
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Efficiency ◽  
Power Level ◽  
High Gain ◽  
Output Power Level ◽  
Tuning Method ◽  
Gan Hemt ◽  
High Efficient ◽  
Amplifier Design

AbstractThis paper describes the development of a power amplifier operating over a 2.4–2.5 GHz frequency range with the output power level more than 15 W and 60% PAE. The transistor applied was the 10 W (13 W Psat) power GaN HEMT (CGH40010F from Wolfspeed) recommended up to 6 GHz. A harmonic tuning method was used to achieve even 30% more output power than the CGH40010 transistor was specified to deliver while maintaining high gain and high efficiency. Furthermore, an accuracy analysis of amplifier design was also conducted. It included validation and correction of the available transistor models as well as validation of the models of microstrip circuits implemented in ADS. Finally, it was concluded that both the mentioned sources of errors contributed at a similar level.

scholarly journals Design of high power amplifier based on wilkinson power combiner for wireless communications

2021 ◽  
Vol 23 (1) ◽  
pp. 330
Author(s):  
Tran Van Hoi ◽  
Ngo Thi Lanh
Keyword(s):  
Reflection Coefficient ◽  
Power Amplifier ◽  
Mobile Communications ◽  
High Power ◽  
Satellite Communication ◽  
Oxide Semiconductor ◽  
Design System ◽  
Power Combiner ◽  
Power Added Efficiency ◽  
High Power Amplifier

Thisarticlepresentsthedesign and fabrication ofa high power amplifierbased onwilkinson power combiner. A 45W basic amplifier module isdesigned usinglaterally-diffused metal-oxide semiconductor (LDMOS) fieldeffect transistor (FET) PTFA260451E transistor. Wilkinson power combineris used to combine two input powers toproduce 90W of power. Theproposed power amplifier is researched, designed and optimized usingadvanced design system(ADS) software.Experimental results show that thegain is 11.5 dB greater than at 2.45-3.0GHz frequency band and achieving maximum power gain of 13.5dB at 2.65GHz centre frequency; output power increased to 49.3dBm; Power added efficiency of 62.1% and good impedances matching: input reflection coefficient (S11)<-10dB, output reflection coefficient (S22)<-15dB. The designed amplifier can be used for4G, 5G mobile communications andS-band satellite communication.

scholarly journals High Power Amplifier (HPA) pada Frekuensi 437,430 MHz untuk Aplikasi TTC Downlink Nano Satelit TEL-U SAT

2016 ◽  
Vol 16 (2) ◽  
pp. 40
Author(s):  
Y. Taryana ◽  
T. Praludi ◽  
Y. Sulaeman ◽  
Y. Wahyu ◽  
W. I. Prayogo ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Impedance Matching ◽  
Design System ◽  
High Power Amplifier ◽  
Link Budget ◽  
Advance Design System

Sistem Telemetry, Tracking, and Command (TTC) berfungsi sebagai interface komunikasi antara nano satelit dengan stasiun bumi. Salah satu perangkat yang penting dalam TTC adalah transmitter yang bekerja pada frekuensi downlink 437,430 MHz. Dari perhitungan link budget diperlukan sebuah high power amplifier (HPA) yang memiliki daya output 30 dBm agar data yang dikirimkan dapat diterima dengan baik oleh stasiun bumi. Pada tulisan ini dirancang dan direalisasikan HPA dua tingkat dengan frekuensi kerja 435 - 438 MHz. Penguat daya tingkat pertama menggunakan komponen aktif transistor BFR96S dan penguat daya tingkat kedua menggunakan komponen aktif transistor MRF555. Penyepadanan impedansi input menggunakan metode impedance matching Pi-network, sedangkan untuk penyepadanan impedansi interstage dan output menggunakan metode impedance matching T-network. Simulasi penguat daya menggunakan software Advance Design System (ADS 2011). Hasil perancangan HPA pada frekuensi 437,430 MHz menghasilkan gain sebesar 28,400 dB, VSWRin sebesar 1,291, dan VSWRout sebesar 1,295. Dari hasil pengukuran prototipe HPA, pada frekuensi 437,430 MHz menghasilkan gain sebesar 23,01 dB, VSWRin sebesar 2,126, VSWRout sebesar 1,695 pada bandwidth 50 MHz.

scholarly journals X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

2018 ◽  
Vol 7 (5) ◽  
pp. 124-130 ◽  
Author(s):  
Y.-J. Lee ◽  
C.-Y. Chang ◽  
Y.-H. Chou ◽  
I-Y. Tarn ◽  
J. Y.-C. Yaung ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Maximum Output Power ◽  
Maximum Output ◽  
High Electron ◽  
Power Combining ◽  
Hybrid Power ◽  
High Power Amplifier ◽  
X Band

An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.

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