scholarly journals The surface recombination velocity and bulk lifetime influences on photogenerated excess carrier density and temperature distributions in n-type silicon

2018 ◽  
Vol 31 (2) ◽  
pp. 313-328 ◽  
Author(s):  
Dragana Markushev ◽  
Dragan Markushev ◽  
Slobodanka Galovic ◽  
Sanja Aleksic ◽  
Dragan Pantic ◽  
...  
Keyword(s):  
Carrier Density ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Excess Carrier ◽  
Experimental Scheme ◽  
Type Silicon ◽  
Temperature Distributions ◽  
Recombination Processes ◽  
Sensitive Function ◽  
Recombination Velocity

The temperature distributions in the n-type silicon circular plate, excited by a frequency-modulated light source from one side, are investigated theoretically in the frequency domain. The influence of the photogenerated excess carrier density on the temperature distributions is considered with respect to the sample thickness, surface quality and carrier lifetime. The presence of the thermalization and non-radiative recombination processes are taken into account. The existence of the fast and slow heat sources in the sample is recognized. It is shown that the temperature distribution on sample surfaces is a sensitive function of an excess carrier density under a bulk and surface recombination. The most favorable values of surface velocities ratio and bulk lifetime are established, assigned for a simpler and more effective analysis of the carrier influence in semiconductors. The photothermal and photoacoustic transmission detection configuration is proposed as a most suitable experimental scheme for the investigation of the excess carrier influence on the silicon surface temperatures.

Low effective back‐surface recombination velocity by boron implantation on 0.3‐Ω‐cmp‐type silicon solar cells

1988 ◽  
Vol 63 (9) ◽  
pp. 4683-4687 ◽  
Author(s):  
Leendert A. Verhoef ◽  
Albert Zondervan ◽  
Fredrik A. Lindholm ◽  
Mark B. Spitzer ◽  
Christopher J. Keavney
Keyword(s):  
Solar Cells ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface ◽  
Type Silicon ◽  
Boron Implantation ◽  
Recombination Velocity

Deep Level Energy Analysis of Surface and Bulk Defects Using a Noncontact Laser/Microwave Photoconductance Technique

1992 ◽  
Vol 261 ◽  
Author(s):  
A. Buczkowski ◽  
G. A. Rozgonyi ◽  
F. Shimura
Keyword(s):  
Energy Analysis ◽  
Deep Level ◽  
Energy Levels ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Level Energy ◽  
Recombination Lifetime ◽  
Recombination Processes ◽  
Bulk Energy ◽  
Recombination Velocity

ABSTRACTA noncontact technique for deep level energy analysis has been discussed based on a laser excitation/microwave reflection transient photoconductance procedure. An algorithm for separation of surface and bulk recombination effects was developed to independently determinesurface and bulk energy states. Deep energy levels associated with trapping and recombination processes have been calculated from the temperature dependence of surface recombination velocity and bulk recombination lifetime, based on state occupation statistics. Results have been compared with conventional DLTS data for silicon samples intentionally doped with metals during crystal growth.

Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 585-590 ◽  
Author(s):  
Olivier Palais ◽  
Mustapha Lemiti ◽  
Jean-Francois Lelievre ◽  
Santo Martinuzzi
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Phosphorus Diffusion ◽  
Type Silicon ◽  
Good Surface ◽  
Recombination Velocity ◽  
P Type

In this work the efficiencies of different surface passivation techniques are compared. This paper emphasizes on the passivation provided by SiNx:H layers that is commonly used in photovolaic industry as surface passivation and anti reflection layer. The method used to evaluate the surface recombination velocity is detailed and discussed. It is shown that light phosphorus diffusion at 850°C – 20 min provides good surface passivation of n-type silicon surface and noticeable passivation of p-type, that can be improved by SiNx:H Layer.

Surface recombination velocity of highly dopedn‐type silicon

1996 ◽  
Vol 80 (6) ◽  
pp. 3370-3375 ◽  
Author(s):  
Andrés Cuevas ◽  
Paul A. Basore ◽  
Gaëlle Giroult‐Matlakowski ◽  
Christiane Dubois
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Type Silicon ◽  
Recombination Velocity

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement

2005 ◽  
Vol 891 ◽  
Author(s):  
Zhimei Zhu ◽  
Elena Plis ◽  
Abdenour Amtout ◽  
Pallab Bhattacharya ◽  
Sanjay Krishna
Keyword(s):  
Infrared Detectors ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface States ◽  
Depletion Region ◽  
Surface Recombination Velocity ◽  
Diode Array ◽  
Ammonium Sulfide ◽  
Picosecond Excitation ◽  
Recombination Velocity

ABSTRACTThe effect of ammonium sulfide passivation on InAs/GaSb superlattice infrared detectors was investigated using two complementary techniques, namely, picosecond excitation correlation (PEC) measurement and variable-area diode array (VADA) surface recombination velocity (SRV) measurement. PEC measurements were conducted on etched InAs/GaSb superlattice mesas, which were passivated in aqueous ammonium sulfide solutions of various strengths for several durations. The PEC signal's decay time constant (DTC) is proportional to carrier lifetimes. At 77 K the PEC signal's DTC of the as-grown InAs/GaSb superlattice sample was 2.0 ns, while that of the unpassivated etched sample was reduced to 1.2 ns by the surface states at the mesa sidewalls. The most effective ammonium sulfide passivation process increased the PEC signal's DTC to 10.4 ns. However it is difficult to isolate surface recombination from other processes that contribute to the lifetime using the PEC data, therefore a VADA SRV measurement was undertaken to determine the effect of passivation on surface recombination. The obtained SRV in the depletion region of the InAs/GaSb superlattice and GaSb junction was 1.1×106 cm/s for the unpassivated sample and 4.6×105 cm/s for the passivated sample. At 77 K the highest R0A value measured in our passivated devices was 2540 W cm2 versus 0.22 W cm2 for the unpassivated diodes. The results of the lifetime, the SRV and the R0A measurements indicate that ammonium sulfide passivation will improve the performance of InAs/GaSb superlattice infrared detectors.

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