scholarly journals A New Quantitative Anomalous X-ray Scattering Method for the Structural Analysis of Amorphous Thin Films

1988 ◽  
Vol 29 (9) ◽  
pp. 697-704 ◽  
Author(s):  
Eiichiro Matsubara ◽  
Yoshio Waseda ◽  
Masao Mitera ◽  
Tsuyoshi Masumoto
2022 ◽  
Vol 40 (1) ◽  
pp. 013411
Author(s):  
Claudia Lau ◽  
Nicholas G. Combs ◽  
Evguenia Karapetrova ◽  
Juan Jiang ◽  
Susanne Stemmer ◽  
...  

2020 ◽  
Vol 92 (14) ◽  
pp. 9956-9962
Author(s):  
Koji Kimura ◽  
Hisao Kiuchi ◽  
Kouichi Hayashi ◽  
Akiyoshi Nakata ◽  
Fumika Fujisaki ◽  
...  

2005 ◽  
Vol 38 (10) ◽  
pp. 4311-4323 ◽  
Author(s):  
Byeongdu Lee ◽  
Insun Park ◽  
Jinhwan Yoon ◽  
Soojin Park ◽  
Jehan Kim ◽  
...  

2003 ◽  
Vol 803 ◽  
Author(s):  
Masugu Sato ◽  
Toshiyuki Matsunaga ◽  
Takashi Kouzaki ◽  
Noboru Yamada

ABSTRACTWe have investigated the structures of amorphous thin films of GeSbTe compounds – the materials used for the recording layer of phase-change optical memory – through grazing incidence X-ray scattering (GIXS) measurements. Thin films with compositions of GeSb2Te4 and Ge2Sb2Te5 were deposited on Si substrates. Electron radial distribution functions (RDFs) derived from the data clearly showed evidence of the medium-range order with three peaks of the atomic pair distribution. The RDFs of both samples were very similar to those of amorphous bulk GeTe compounds reported from previous X-ray scattering experiments. The positions of the first peaks of these RDFs were consistent with the distances of the first nearest neighbor pairs reported from previous EXAFS experiments. A comparison of the RDF of the amorphous phase with that of the crystalline phase suggested that the phase change caused no significant change in the number of atoms included inside or the radius of the second nearest neighbor atomic shell, although it changed the coordination number and the distance of the first nearest neighbor atomic pairs. This may shorten the moving distance of atoms in the phase change and enable high-speed phase change.


1999 ◽  
Vol 14 (7) ◽  
pp. 2905-2911 ◽  
Author(s):  
Sangsub Kim ◽  
Tae Soo Kang ◽  
Jung Ho Je

Epitaxial (Ba0.5Sr0.5) TiO3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a = 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in- and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.


Sign in / Sign up

Export Citation Format

Share Document