Structural characterization of laser ablated epitaxial (Ba0.5Sr0.5)TiO3 thin films on MgO(001) by synchrotron x-ray scattering

Epitaxial (Ba0.5Sr0.5) TiO3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a = 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in- and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.

Download Full-text

Synchrotron X-Ray Scattering of (Ba0.5Sr0.5)TiO3 Thin Films Epitaxially Grown on MgO(100)

MRS Proceedings ◽

10.1557/proc-541-53 ◽

1998 ◽

Vol 541 ◽

Author(s):

Sang S. Kim ◽

Jung H. Je

Keyword(s):

Thin Films ◽

Early Stage ◽

Lattice Parameter ◽

Normal Direction ◽

X Ray ◽

X Ray Scattering ◽

Surface Normal ◽

Out Of Plane ◽

Axis Parallel ◽

Ray Scattering

Abstract((Ba0.5Sr 0.5)TiO3 thin films of two different thicknesses (∼ 250 Å and ∼ 1330 Å) epitaxially prepared on MgO(100) using pulsed laser deposition were studied by synchrotron x-ray scattering measurements. The film initially grew on MgO(100) with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became rougher significantly, but the interface between the film and the substrate did not change so much. In the early stage, the film was highly strained in a tetragonal structure with the longer axis parallel to the surface normal direction. As the growth proceeded further, it was mostly relaxed to a cubic structure with the lattice parameter of the bulk value and the mosaic distribution improved significantly in both the in-plane and the out-of-plane directions. The thinner film showed only one domain limited mainly by the film thickness, but the thicker film exhibited three domains along the surface normal direction.

Download Full-text

High Resolution X-Ray Scattering Studies of Strain in Epitaxial Thin Films of Yttrium Silicide Grown on Silicon(111)

MRS Proceedings ◽

10.1557/proc-160-287 ◽

1989 ◽

Vol 160 ◽

Cited By ~ 2

Author(s):

L. J. Martinez-Miranda ◽

M. P. Siegal ◽

P. A. Heiney ◽

J. J. Santiago-Aviles ◽

W. R. Graham

Keyword(s):

Thin Films ◽

High Resolution ◽

Grazing Incidence ◽

Lattice Parameters ◽

Epitaxial Thin Films ◽

X Ray ◽

X Ray Scattering ◽

Areal Coverage ◽

Out Of Plane ◽

Ray Scattering

AbstractWe have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.

Download Full-text

Detailed analysis of gyroid structures in diblock copolymer thin films with synchrotron grazing-incidence X-ray scattering

Journal of Applied Crystallography ◽

10.1107/s0021889807037880 ◽

2007 ◽

Vol 40 (5) ◽

pp. 950-958 ◽

Cited By ~ 28

Author(s):

Sangwoo Jin ◽

Jinhwan Yoon ◽

Kyuyoung Heo ◽

Hae-Woong Park ◽

Jehan Kim ◽

...

Keyword(s):

Thin Films ◽

Diblock Copolymer ◽

Grazing Incidence ◽

Orientation Distribution ◽

Lattice Parameter ◽

Two Dimensional ◽

Distortion Factor ◽

X Ray ◽

X Ray Scattering ◽

Ray Scattering

In this study, a grazing-incidence X-ray scattering (GIXS) formula was derived for gyroid structures formed in thin films supported on substrates. Two-dimensional GIXS patterns were measured for gyroid structures formed in polystyrene-b-polyisoprene (PS-b-PI) diblock copolymer nanometre-scale thin films supported on silicon substrates, and a quantitative analysis of the obtained two-dimensional GIXS data was conducted with the scattering formula. This analysis provided details (lattice parameter, width of the PS phase, positional distortion factor, orientation and orientation distribution) of the gyroid structures developed in the diblock copolymer thin films that are not easily obtained using conventional techniques. Moreover, it was possible to simulate complete and detailed two-dimensional GIXS patterns with the determined structure parameters.

Download Full-text

Microstructural characterisation by X-ray scattering of perovskite-type La0.8Sr0.2MnO3±δ thin films prepared by a dip-coating process

Journal of Materials Science ◽

10.1007/s10853-006-0560-3 ◽

2007 ◽

Vol 42 (12) ◽

pp. 4581-4590 ◽

Cited By ~ 1

Author(s):

P. Lenormand ◽

A. Lecomte ◽

C. Laberty-Robert ◽

F. Ansart ◽

A. Boulle

Keyword(s):

Thin Films ◽

Dip Coating ◽

Coating Process ◽

X Ray ◽

X Ray Scattering ◽

Microstructural Characterisation ◽

Perovskite Type ◽

Ray Scattering

Download Full-text

A New X-Ray Scattering Method for Determining Pore-Size Distribution in Low-k Thin Films

MRS Proceedings ◽

10.1557/proc-714-l12.10.1 ◽

2001 ◽

Vol 714 ◽

Cited By ~ 1

Author(s):

Kazuhiko Omote ◽

Shigeru Kawamura

Keyword(s):

Thin Films ◽

Pore Size Distribution ◽

Pore Size ◽

Gas Adsorption ◽

Size Distributions ◽

X Ray ◽

X Ray Scattering ◽

Pore Size Distributions ◽

Scattering Technique ◽

Ray Scattering

ABSTRACTWe have successively developed a new x-ray scattering technique for a non-destructive determination of pore-size distributions in porous low-κ thin films formed on thick substrates. The pore size distribution in a film is derived from x-ray diffuse scattering data, which are measured using offset θ/2θ scans to avoid strong specular reflections from the film surface and its substrate. Γ-distribution mode for the pores in the film is used in the calculation. The average diameter and the dispersion parameter of the Γ-distribution function are varied and refined by computer so that the calculated scattering pattern best matches to the experimental pattern. The technique has been used to analyze porous methyl silsesquioxane (MSQ) films. The pore size distributions determined by the x-ray scattering technique agree with that of the commonly used gas adsorption technique. The x-ray technique has been also used successfully determine small pores less than one nanometer in diameter, which is well below the lowest limit of the gas adsorption technique.

Download Full-text