scholarly journals Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force

2000 ◽  
Vol 41 (8) ◽  
pp. 1013-1018 ◽  
Author(s):  
Masahito Watanabe ◽  
Wei Wang ◽  
Minoru Eguchi ◽  
Taketoshi Hibiya
Keyword(s):  
Crystal Growth ◽  
Oxygen Atom ◽  
Electromagnetic Force ◽  
Silicon Melt

Study on silicon melt convection during the RF-FZ crystal growth process

1999 ◽  
Vol 206 (1-2) ◽  
pp. 27-36 ◽  
Author(s):  
Tetsuo Munakata ◽  
Ichiro Tanasawa
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Crystal Growth Process ◽  
Silicon Melt ◽  
Melt Convection

Three-Dimensional Simulation of Silicon Melt Flow in Electromagnetic Czochralski Crystal Growth

2000 ◽  
Vol 39 (Part 1, No. 2A) ◽  
pp. 372-377 ◽  
Author(s):  
Wei Wang ◽  
Masahito Watanabe ◽  
Taketoshi Hibiya ◽  
Takahiko Tanahashi
Keyword(s):  
Crystal Growth ◽  
Three Dimensional ◽  
Melt Flow ◽  
Czochralski Crystal Growth ◽  
Silicon Melt ◽  
Dimensional Simulation

In situ observations of crystal growth behavior of silicon melt

2002 ◽  
Vol 243 (2) ◽  
pp. 275-282 ◽  
Author(s):  
Kozo Fujiwara ◽  
Keiji Nakajima ◽  
Toru Ujihara ◽  
Noritaka Usami ◽  
Gen Sazaki ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Behavior ◽  
Silicon Melt ◽  
In Situ Observations ◽  
Crystal Growth Behavior

Monte Carlo simulation of crystal growth from silicon melt

1988 ◽  
Vol 3 (1) ◽  
pp. 1-5 ◽  
Author(s):  
A K Tan ◽  
C K Ong ◽  
H S Tan
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Crystal Growth ◽  
Silicon Melt

Chaotic feature of silicon melt turbulence and its influence on crystal growth

1998 ◽  
Vol 83 (8) ◽  
pp. 4180-4186 ◽  
Author(s):  
Takaya Miyano ◽  
Akira Shintani ◽  
Tadashi Kanda
Keyword(s):  
Crystal Growth ◽  
Silicon Melt

scholarly journals Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Ying-Yang Teng ◽  
Jyh-Chen Chen ◽  
Chung-Wei Lu ◽  
Cheng-Chuan Huang ◽  
Wan-Ting Wun ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Concentration ◽  
Concentration Distribution ◽  
Growth Process ◽  
Silicon Crystal ◽  
Crucible Wall ◽  
Crystal Growth Process ◽  
Silicon Melt ◽  
Average Oxygen Concentration ◽  
Crystal Interface

We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.

Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields

2001 ◽  
Vol 230 (1-2) ◽  
pp. 92-99 ◽  
Author(s):  
J Virbulis ◽  
Th Wetzel ◽  
A Muiznieks ◽  
B Hanna ◽  
E Dornberger ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Magnetic Fields ◽  
Numerical Investigation ◽  
Large Diameter ◽  
Melt Flow ◽  
Silicon Melt

Density anomaly effect upon silicon melt flow during Czochralski crystal growth II. Time-topical flow structure under the growth interface

1996 ◽  
Vol 160 (1-2) ◽  
pp. 49-54 ◽  
Author(s):  
Shinji Togawa ◽  
Sang-Ik Chung ◽  
Soroku Kawanishi ◽  
Koji Izunome ◽  
Kazutaka Terashima ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Flow Structure ◽  
Melt Flow ◽  
Growth Interface ◽  
Czochralski Crystal Growth ◽  
Density Anomaly ◽  
Silicon Melt

Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth

1995 ◽  
Vol 34 (Part 2, No. 12B) ◽  
pp. L1635-L1637
Author(s):  
Xinming Huang ◽  
Kazutaka Terashima ◽  
Shigeyuki Kimura
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Czochralski Silicon ◽  
Silicon Melt
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