scholarly journals Frequency and Time Domain Analysis of Influence of the Grounding Electrode Conductivity on Induced Current Distribution

2013 ◽  
Vol 9 (2) ◽  
pp. 137 ◽  
Author(s):  
Silvestar Šesnić ◽  
Dragan Poljak

The paper deals with an assessment of the influence of finite conductivity to the current induced along the horizontal grounding electrode. Analysis is performed in frequency and time domain, respectively. Current distribution along the grounding electrode buried in a lossy half-space is determined via analytical solution of the corresponding Pocklington equation in the frequency domain. The corresponding time domain response is obtained by means of Inverse Fast Fourier Transform (IFFT). The electrode is excited via an equivalent current source. Presence of the earth-air interface is taken into account via the simplified reflection coefficient arising from the Modified Image Theory (MIT). The electrode current is calculated for the case of perfectly conducting (PEC) electrode and for the electrodes made of copper and aluminum. Comparison of results shows no significant discrepancy between these electrodes, justifying the use of a PEC electrode approximation.

2016 ◽  
Vol 9 (4) ◽  
pp. 747-755
Author(s):  
Hamed Khoshniyat ◽  
Abdolali Abdipour ◽  
Gholamreza Moradi

In this paper, the structure of a common field-effect transistor (FET)-based negative impedance converter (NIC) that behaves as a negative capacitor is presented. The nonlinear modeling, analysis, and simulation of this non-Foster structure are presented in the time domain and the transient response of the circuit can be used to study the stability of the circuit. For the analysis of the circuit performance, the linear time-dependent modeling approach is used. This method is based on determination of the circuit parameters at each step according to parameters of the previous steps, bias voltages, and the input signal. Results of the proposed method for analysis of non-Foster circuit are compared with those of nonlinear analysis using commercial software, which shows a good agreement together and the proposed method is validated. Based on the analysis, the nonlinear capacitance of non-Foster circuit is extracted and based on the simple second order model of current source of FET, the analytic model of negative capacitor is extracted and improved by curve fitting. The proposed model results have a good agreement with simulation results of NIC's circuit.


NANO ◽  
2009 ◽  
Vol 04 (01) ◽  
pp. 13-21 ◽  
Author(s):  
DAVOOD FATHI ◽  
BEHJAT FOROUZANDEH

This paper introduces an accurate analysis of time domain response of carbon nanotube (CNT) interconnects based on distributed RLC model that takes the effect of both the series resistance and the output parasitic capacitance of the driver into account. Using rigorous principle calculations, accurate expressions for the transfer function of these lines and their time domain response have been presented. It has been shown that the second-order transfer function cannot represent the distributed behavior of the long CNT interconnects, and the fourth-order approximation offers a better result. Also, the time response of a driven long CNT interconnect versus length and diameter have been studied. The obtained results show that the overshoot increases and the time delay decreases with increasing the CNT diameter, such that with the diameter value of 10 nm for a 3.3 mm CNT interconnect, the maximum overshoot value reaches about 95% of the amplitude of the driver input. On the contrary, the overshoot increases and the time delay decreases with decreasing the length of the CNT, such that with the length value of 1 mm for a 5 nm diameter CNT interconnect, the maximum overshoot reaches about 90% of the amplitude of the driver input.


1993 ◽  
Vol 3 (3) ◽  
pp. 581-591 ◽  
Author(s):  
Wojciech Gwarek ◽  
Malgorzata Celuch-Marcysiak

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