Automated System for Selecting Optimal Process Technology for Cutting Ingots of Semi-conductor and Dielectric Materials onto Plates

2018 ◽  
Vol 23 (1) ◽  
pp. 103-106
Author(s):  
A.V. Aleksakhin ◽  
◽  
D.N. Gulidov ◽  
Keyword(s):  
Dielectric Materials ◽  
Automated System ◽  
Optimal Process ◽  
Process Technology

Study Photo Imagable dielectric (PID) and non-PID on process, fabrication and reliability by using panel glass substrate for next generation interconnection

2019 ◽  
Vol 2019 (1) ◽  
pp. 000216-000222
Author(s):  
Chun-Hsien Chien ◽  
Chien-Chou Chen ◽  
Wen-Liang Yeh ◽  
Wei-Ti Lin ◽  
Cheng-Hui Wu ◽  
...  
Keyword(s):  
Stress Test ◽  
Dielectric Materials ◽  
Circuit Board ◽  
Strip Line ◽  
Organic Substrates ◽  
Next Generation ◽  
Glass Panel ◽  
Process Technology ◽  
Fine Line ◽  
Ic Foundry

Abstract In 1965, Gordon E. Moore, the co-founder of Intel stated that numbers of transistors on a chip will double every 18 months and his theory called the Moore's Law. The law had been the guiding principle of chip design over 50 years. The technology dimension is scaling very aggressively in IC foundry. For example, TSMC announced their 5nm Fin Field-Effect Transistor (FinFET) process technology is optimized for both mobile and high performance computing applications. It is scheduled to start risk production in the second half of 2019.[1] To overview the semiconductor supply chain included IC foundry, wafer bumping, IC carrier, PCB (Printed circuit board) and OSAT (oversea assembly and testing)… etc., the IC carrier and PCB technology dimension scaling are far behind than the IC foundry since many reasons for the traditional industry. The industry needs different kinds of breakthrough approaches for the scaling of via and strip line in next generation interconnection. Traditional organic substrates faces many challenges of warpage, surface roughness and material dimension stability issues for manufacturing and high density I/Os with very fine line interconnections. To breakthrough these challenges, the materials of glass carrier, new photo-imagable dielectric (PID) and advanced equipment were evaluated for the fine line and fine via interconnection. In the papers, there are many PID and non-PID materials were surveyed and compared for fine via (< 10μm) interconnection or low loss of high frequency application. The first candidate was chosen for redistribution layers (RDL) fabrication by using 370mm × 470mm glass panels. Semi additive process (SAP) was used for direct metallization on glass panel with different build-up dielectric materials to form daisy chain test vehicles. The process, fabrication integration and electrical measurement results of daisy chain showed good continuity and electric resistance in the glass panel substrate. The reliability of the thermal cycling test (TCT) and highly accelerated stress test (HAST) were evaluated as well in this study.

In-Situ Evaluation of High Frequency and High Temperature Characteristics of Dielectric in High-Density Substrate

2007 ◽  
Author(s):  
Youhong Wu ◽  
Shinobu Kato ◽  
DongDong Wang ◽  
Toshimasa Matsuoka ◽  
Kenji Taniguchi
Keyword(s):  
Material Properties ◽  
High Speed ◽  
Dielectric Material ◽  
Propagation Constant ◽  
Characteristic Impedance ◽  
Dielectric Materials ◽  
Actual Process ◽  
Process Technology ◽  
Temperature Dependent

To design a high-speed/frequency system, the dielectric material properties, i.e., dielectric constant and loss tangent are key inputs and their frequency and temperature dependency need to be “in situ” comprehended accurately, since important high-speed quantities, such as characteristic impedance, propagation constant and S-parameters, depend upon the physical dimensions and dielectric material properties of transmission line. This paper investigates frequency and temperature dependent properties of dielectric materials used for high performance microelectronic substrate up to 40 GHz under −40 to 200 deg C, with a general-purpose vector network analyzer (VNA) for obtaining S-parameter of “in situ” test coupons fabricated utilizing the actual process technology. Based on this “in situ” measurement, impact of the frequency and temperature dependent dielectric material properties on the high-speed quantities also have been discussed.

Microstructural characterization of sol-gel coating on PET films

1994 ◽  
Vol 52 ◽  
pp. 886-887
Author(s):  
R. T. Chen ◽  
R.A. Norwood
Keyword(s):  
Ion Beam ◽  
Sol Gel ◽  
Industrial Applications ◽  
Hard Coatings ◽  
Nanometer Scale ◽  
Ion Beam Sputtering ◽  
Process Technology ◽  
Refractive Index Measurement ◽  
Organically Modified ◽  
Pet Films

Sol-gel processing has been used to control the structure of a material on a nanometer scale in preparing advanced ceramics and glasses. Film coating using the sol-gel process was also found to be a viable process technology in applications such as optical, porous, antireflection and hard coatings. In this study, organically modified silicate (Ormosil) coatings are applied to PET films for various industrial applications. Sol-gel materials are known to exhibit nanometer scale structures which havepreviously been characterized by small-angle X-ray scattering (SAXS), neutron scattering and light scattering. Imaging of the ultrafine sol-gel structures has also been performed using an ultrahigh resolution replica/TEM technique. The objective of this study was to evaluate the ultrafine structures inthe sol gel coatings using a direct imaging technique: atomic force microscopy (AFM). In addition, correlation of microstructures with processing parameters, coating density and other physical properties will be discussed.The materials evaluated are organically modified silicate coatings on PET film substrates. Refractive index measurement by the prism coupling method was used to assess density of the sol-gel coating.AFM imaging was performed on a Nanoscope III AFM (by Digital Instruments) using constant force mode. Solgel coating samples coated with a thin layer of Ft (by ion beam sputtering) were also examined by STM in order to confirm the structures observed in the contact type AFM. In addition, to compare the previous results, sol-gel powder samples were also prepared by ultrasonication followed by Pt/Au shadowing and examined using a JEOL 100CX TEM.

An automated system to assess pilot performance in a Link GAT-1 trainer.

1974 ◽  
Author(s):  
Peter H. Henry ◽  
Roy A. Turner ◽  
Robert B. Matthie
Keyword(s):  
Automated System ◽  
Pilot Performance

Evaluation of the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings by the multi-frequency radio wave method of a slow surface electromagnetic waves

2020 ◽  
pp. 51-58
Author(s):  
Aleksandr I. Kazmin ◽  
Pavel A. Fedjunin
Keyword(s):  
Radio Wave ◽  
Noise Level ◽  
Electromagnetic Waves ◽  
Dielectric Materials ◽  
Geometric Parameters ◽  
Experimental Investigations ◽  
Wave Method ◽  
Dielectric Coatings ◽  
Surface Electromagnetic Waves ◽  
Multilayer Dielectric

One of the most important diagnostic problems multilayer dielectric materials and coatings is the development of methods for quantitative interpretation of the checkout results their electrophysical and geometric parameters. The results of a study of the potential informativeness of the multi-frequency radio wave method of surface electromagnetic waves during reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings are presented. The simulation model is presented that makes it possible to evaluate of the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings. The model takes into account the values of the electrophysical and geometric parameters of the coating, the noise level in the measurement data and the measurement bandwidth. The results of simulation and experimental investigations of reconstruction of the structure of relative permittivitties and thicknesses of single-layer and double-layer dielectric coatings with different thicknesses, with different values of the standard deviation (RMS) of the noise level in the measured attenuation coefficients of the surface slow electromagnetic wave are presented. Coatings based on the following materials were investigated: polymethyl methacrylate, F-4D PTFE, RO3010. The accuracy of reconstruction of the electrophysical parameters of the layers decreases with an increase in the number of evaluated parameters and an increase in the noise level. The accuracy of the estimates of the electrophysical parameters of the layers also decreases with a decrease in their relative permittivity and thickness. The results of experimental studies confirm the adequacy of the developed simulation model. The presented model allows for a specific measuring complex that implements the multi-frequency radio wave method of surface electromagnetic waves, to quantify the potential possibilities for the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric materials and coatings. Experimental investigations and simulation results of a multilayer dielectric coating demonstrated the theoretical capabilities gained relative error permittivity and thickness of the individual layers with relative error not greater than 10 %, with a measurement bandwidth of 1 GHz and RMS of noise level 0,003–0,004.

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