Microstructural characterization of sol-gel coating on PET films

1994 ◽  
Vol 52 ◽  
pp. 886-887
Author(s):  
R. T. Chen ◽  
R.A. Norwood
Keyword(s):  
Ion Beam ◽  
Sol Gel ◽  
Industrial Applications ◽  
Hard Coatings ◽  
Nanometer Scale ◽  
Ion Beam Sputtering ◽  
Process Technology ◽  
Refractive Index Measurement ◽  
Organically Modified ◽  
Pet Films

Sol-gel processing has been used to control the structure of a material on a nanometer scale in preparing advanced ceramics and glasses. Film coating using the sol-gel process was also found to be a viable process technology in applications such as optical, porous, antireflection and hard coatings. In this study, organically modified silicate (Ormosil) coatings are applied to PET films for various industrial applications. Sol-gel materials are known to exhibit nanometer scale structures which havepreviously been characterized by small-angle X-ray scattering (SAXS), neutron scattering and light scattering. Imaging of the ultrafine sol-gel structures has also been performed using an ultrahigh resolution replica/TEM technique. The objective of this study was to evaluate the ultrafine structures inthe sol gel coatings using a direct imaging technique: atomic force microscopy (AFM). In addition, correlation of microstructures with processing parameters, coating density and other physical properties will be discussed.The materials evaluated are organically modified silicate coatings on PET film substrates. Refractive index measurement by the prism coupling method was used to assess density of the sol-gel coating.AFM imaging was performed on a Nanoscope III AFM (by Digital Instruments) using constant force mode. Solgel coating samples coated with a thin layer of Ft (by ion beam sputtering) were also examined by STM in order to confirm the structures observed in the contact type AFM. In addition, to compare the previous results, sol-gel powder samples were also prepared by ultrasonication followed by Pt/Au shadowing and examined using a JEOL 100CX TEM.

Auger and TEM analysis of multilayer IC contacts

1994 ◽  
Vol 52 ◽  
pp. 818-819
Author(s):  
R. W. Buttry ◽  
C. R. Hills ◽  
G. C. Nelson ◽  
T. Tribble
Keyword(s):  
Integrated Circuits ◽  
Ion Beam ◽  
Thin Layers ◽  
Nanometer Scale ◽  
Ion Beam Sputtering ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Layer Structures ◽  
Beam Sputtering ◽  
Depth Scale

With the continued shrinkage of the dimensions (both laterally and in depth) of integrated circuits (IC), knowledge of the interactions that occur over nanometer scale distances becomes increasingly important. This requirement has pushed the capabilities of the tools used to analyze these structuresto their maximum. Two techniques which are frequently used to analyze thin layer structures are AugerElectron Spectroscopy (AES) and Transmission Electron Microscopy (TEM).AES combined with ion beam sputtering is used to measure the elemental composition as a function of sputter time. With suitable calibration, the sputter time scale can be converted to a depth scale. Theprofiles can also be used to study the interfacial reactions for thin layers. TEM is frequently used to accurately measure layer thicknesses and the layer elemental constituents can be identified byEnergy Dispersive Spectroscopy (EDS). When the layer thicknesses approach a few tens of A there are problems associated with interpreting the data from both of these techniques, particularly the data obtained near the interfaces.

On- and Off-AXIS Large-Area Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
James A. Greer ◽  
M. D. Tabat
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Industrial Process ◽  
Industrial Applications ◽  
Laser Deposition ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Power Sources

AbstractOver the past few years Pulsed Laser Deposition (PLD) has become a popular technique for the deposition of a wide variety of thin films, and PLD systems are currently found in numerous industrial, government, university, and military laboratories. At present, it is estimated that well over 200 different materials have been deposited by PLD and the list keeps growing. However, even with all the interest in laser deposition the technique has not yet emerged as an industrial process. At the moment, industry still prefers standard thin film growth techniques such as magnetron and ion beam sputtering, chemical vapor deposition, and electron beam evaporation for production applications. These processes have been in use for decades and have demonstrated the ability to deposit films of most materials over large areas with excellent uniformity at reasonable cost and deposition rates. Furthermore, an entire infrastructure has been built up to support these processes including standardization of deposition rate monitors, power sources, target and crucible sizes, etc. On the other hand, laser-deposition is still an emerging technology, and relatively little infrastructure exists to adequately support either research or industrial applications. Since there are several materials which are difficult if not impossible to grow in thin-film form by more conventional techniques, it is expected that as pulsed laser-deposition matures this unique process will take its rightful place on the manufacturing line.

Machining Simulation in Focused Ion Beam Sputtering

2020 ◽  
Vol 8 (2) ◽  
Author(s):  
Takashi Matsumura ◽  
Ryosuke Ogasawara
Keyword(s):  
Focused Ion Beam ◽  
Removal Rate ◽  
Incident Angle ◽  
Ion Beam ◽  
Surface Profile ◽  
Control Surface ◽  
Nanometer Scale ◽  
Ion Beam Sputtering ◽  
Depth Direction ◽  
Removal Model

Abstract Focused ion beam (FIB) has been applied to micro/nanometer-scale fabrication to control surface functions with the surface topographies. Although the resolution of the FIB sputtering is in the nanometer-scale range in positioning, the removal shape in the depth direction cannot be controlled numerically. This study presents a removal model to predict the surface profile in the simulation. The removal rate depends on not only the ion beam intensity but also the incident angle onto the surface to be structured. The removal model considers the effects of those two parameters to control the surface profile in sputtering. The removal rates in sputtering of the inclined surfaces at incident angles are associated with a Gaussian distribution. The parameters in the model were identified to minimize the simulation error validated against the sputtering tests. The presented model was applied to simulate the microscale structures on surfaces using the identified parameters. The simulation was validated in comparison with the actual machined shapes.

Advanced Ion Beam Material Processing Projects in Japan

1992 ◽  
Vol 268 ◽  
Author(s):  
Isao Yamada
Keyword(s):  
Large Scale ◽  
Ion Beam ◽  
Development Program ◽  
Industrial Applications ◽  
Development Project ◽  
Ministry Of Education ◽  
Major Research ◽  
Research Facility ◽  
Process Technology ◽  
Large Scale Project

ABSTRACTR&D projects of ion beam systems and ion beam process technology have been conducted under the National Research and Development Program known as the “Large-Scale project”. The project includes development of five large-scale ion beam systems and their application for surface modifications. Under another program called the National Research Facility Development Project, the Ion Engineering Center Corporation has been established in order to promote industrial applications of ion beam processes. This paper reviews those projects and recent progress on development of large-scale ion beam systems and related materials processing technology. Major research projects which have been funded by the Ministry of Education for ion beam related researches are also reviewed.

Pyroelectric Properties of Lead Based Ferroelectric thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Patel ◽  
D.A. Tossell ◽  
N.M. Shorrocks ◽  
R. W. Whatmore ◽  
R. Watton
Keyword(s):  
Ion Beam ◽  
Sol Gel ◽  
High Energy ◽  
Pyroelectric Coefficient ◽  
Dielectric Constants ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
La Doped

AbstractLead based thin ferroelectric films have been prepared using both sol-gel and dual ion beam sputtering (DIBS) processes. Material compositions within the PbTiO3 and PLZT system have been deposited by both techniques onto metallised silicon. By using a standard sol-gel prepared solution, modified with acetylacetone and spin-coating, lµm thick fully perovskite layers, were obtained at low temperature (450°) with some preferred orientation. The grain size was in the range 0.2-0.4µm. A dielectric constant of 400 and a reversible pyroelectric coefficient of 1.2 × 10−4Cm−2K−1 were obtained. In contrast, a range of capping layers (SiO2, A12O3, BPSG) on silicon have been investigated using the DIBS process. Highly crystalline (100) and (111) films were readily produced at temperatures in excess of 550°, at a growth rate of 0.3µm/hour. Control of stoichiometry has also been studied in detail, by sputtering of a composite metal-ceramic target with a high energy Kr beam and by bombarding the growing film with a low energy oxygen ion-beam. Dielectric constants of 200-300, losses below 0.015 and resistivities above 1010Ωm have been achieved. A pyroelectric coefficient of the order of 2.5 × 10−4Cm−2K-1, pre-poled for a La-doped film on BPSG capped Si was obtained, which did not increase significantly on poling.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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