Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

scholarly journals Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

2020 ◽  
Vol 21 (1) ◽  
pp. 8
Author(s):  
Emy Mulyani ◽  
Tjipto Sujitno ◽  
Dessy Purbandari ◽  
Ferdiansjah Ferdiansjah ◽  
Sayono Sayono
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Glass Substrate ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Thermal Evaporation Technique ◽  
Optimal Thickness ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Deposition Depth

This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were  etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

Optical properties of rubrene thin film prepared by thermal evaporation

2015 ◽  
Vol 24 (4) ◽  
pp. 047801 ◽  
Author(s):  
Liang Chen ◽  
Jin-Xiang Deng ◽  
Le Kong ◽  
Min Cui ◽  
Ren-Gang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Thermal Evaporation

Optical properties of selenium–tellurium nanostructured thin film grown by thermal evaporation

2009 ◽  
Vol 404 (16) ◽  
pp. 2134-2137 ◽  
Author(s):  
Karunapati Tripathi ◽  
Adam A. Bahishti ◽  
M.A. Majeed Khan ◽  
M. Husain ◽  
M. Zulfequar
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Thermal Evaporation ◽  
Nanostructured Thin Film

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Preparation of thin film memories by thermal evaporation

Shinku ◽  
1961 ◽  
Vol 4 (11) ◽  
pp. 474-482
Author(s):  
Hiroshi ISHII ◽  
Akio ITO
Keyword(s):  
Thin Film ◽  
Thermal Evaporation
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