scholarly journals Structural and optical characterization of Cu doped ZnO thin films deposited by RF magnetron sputtering

2019 ◽  
Vol 70 (7) ◽  
pp. 127-131
Author(s):  
Maria Toma ◽  
Nicolae Ursulean ◽  
Daniel Marconi ◽  
Aurel Pop

Abstract Cu doped transparent ZnO thin films (CZO) were sputtered on soda lime glass substrates at three different distances between substrate and target. The effects of copper doping on the structural and optical properties were investigated by X-ray diffraction (XRD) and transmittance measurements. The XRD results indicated that CZO thin films have a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. With increasing the distance between substrate-target, from 4 cm to 8 cm, the refractive index of the CZO films decreased. In the visible wavelength region, the average value of the transmittance was above 80%. Thus, significant changes in the structural and optical properties have occurred due to the decrease of the distance between the target-substrate and the residual compressive stress at the film-substrate interface arising during deposition.

2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.


2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
K. Diesner ◽  
I. Sieber ◽  
K. Ellmer

AbstractSputtering of aluminium doped zinc oxide thin films from a ceramic ZnO:Al target requires a controlled addition of oxygen to the sputtering atmosphere in order to obtain films with low resistivity and high transparency. In this paper the influence of the oxygen addition and of the substrate temperature on the structural, morphological and electrical properties of ZnO:Al films is investigated. The oxygen addition leads to a minimum resistivity when the oxygen content during sputtering is 0.2%. This small amount of oxygen not only improves the transparency of the films, it also induces to a significant grain growth as revealed by scanning electron microscopy. A further increase of the oxygen content leads to highly resistive films, due to a complete oxidation of the dopant Al. As expected, higher substrate temperatures from about 373 to 673 K improve the of crystallinity and hence the resistivity. The lowest resistivity achieved was about 1.2.10-3 Ωcm. At still higher temperatures the resistivity increases which seems to be due to an outdiffusion of sodium into the ZnO:Al films from the soda lime glass, compensating part of the donors.


2008 ◽  
Vol 92 (14) ◽  
pp. 141911 ◽  
Author(s):  
N. A. Suvorova ◽  
I. O. Usov ◽  
L. Stan ◽  
R. F. DePaula ◽  
A. M. Dattelbaum ◽  
...  

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