Influence of Oxygen Addition and Substrate Temperature on Textured Growth of Al-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
K. Diesner ◽  
I. Sieber ◽  
K. Ellmer
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Content ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Doped Zno ◽  
Oxygen Addition ◽  
Substrate Temperatures

AbstractSputtering of aluminium doped zinc oxide thin films from a ceramic ZnO:Al target requires a controlled addition of oxygen to the sputtering atmosphere in order to obtain films with low resistivity and high transparency. In this paper the influence of the oxygen addition and of the substrate temperature on the structural, morphological and electrical properties of ZnO:Al films is investigated. The oxygen addition leads to a minimum resistivity when the oxygen content during sputtering is 0.2%. This small amount of oxygen not only improves the transparency of the films, it also induces to a significant grain growth as revealed by scanning electron microscopy. A further increase of the oxygen content leads to highly resistive films, due to a complete oxidation of the dopant Al. As expected, higher substrate temperatures from about 373 to 673 K improve the of crystallinity and hence the resistivity. The lowest resistivity achieved was about 1.2.10-3 Ωcm. At still higher temperatures the resistivity increases which seems to be due to an outdiffusion of sodium into the ZnO:Al films from the soda lime glass, compensating part of the donors.

Effect of Substrate Temperature on One-Step Magnetron-Sputtered Cu(In,Ga)Se2 Thin Films for Solar Cells

2013 ◽  
Vol 291-294 ◽  
pp. 703-707
Author(s):  
Gui Shan Liu ◽  
Hao Na Li ◽  
Xiao Yue Shen ◽  
Zhi Qiang Hu ◽  
Hong Shun Hao
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Substrate Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Measurement Analysis ◽  
One Step ◽  
High Absorption Coefficient ◽  
Substrate Temperatures

CIGS thin films were deposited on soda lime glass by one-step magnetron sputtering using a single quaternary-CIGS target in stoichiometric proportions. The influences of substrate temperature on the structural, optical, and electrical properties of Cu(In,Ga)Se2 (CIGS) thin films were investigated. The phase structure of CIGS thin films was characterized by X-ray diffraction (XRD). The morphology and thickness of CIGS thin films were observed by Scanning Electron Microscope (SEM). The absorption coefficient of CIGS thin films was measured by Ultraviolet-visible Spectrophotometer. Four-point probe method was used to test the resistivity of CIGS thin films. Based on the results of characterization, the increase in crystallite size of CIGS was found to be significantly noticeable with increasing substrate temperature. UV-vis measurement analysis suggested that CIGS thin films deposited at different substrate temperatures had high absorption coefficient (~104 cm-1) and optical band gap (1.07-1.23 eV). The substrate temperature dependence of the resistivity of the films indicated that the resistivity of the films fall to about 0.5 Ω۰cm as the substrate glass was heated up to 300 °C.

The Effect of Substrate Temperatures on the Structural and Optical Properties of Cosputtered ZnO and AlN Thin Films

2012 ◽  
Vol 626 ◽  
pp. 25-28 ◽  
Author(s):  
A. Ismail ◽  
Mat Johar Abdullah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Sputtering ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Visible Range ◽  
Structural And Optical Properties ◽  
Doped Zno ◽  
Substrate Temperatures

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.

scholarly journals Structural and optical characterization of Cu doped ZnO thin films deposited by RF magnetron sputtering

2019 ◽  
Vol 70 (7) ◽  
pp. 127-131
Author(s):  
Maria Toma ◽  
Nicolae Ursulean ◽  
Daniel Marconi ◽  
Aurel Pop
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Wavelength Region ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Structural And Optical Properties ◽  
Average Value ◽  
Film Substrate

Abstract Cu doped transparent ZnO thin films (CZO) were sputtered on soda lime glass substrates at three different distances between substrate and target. The effects of copper doping on the structural and optical properties were investigated by X-ray diffraction (XRD) and transmittance measurements. The XRD results indicated that CZO thin films have a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. With increasing the distance between substrate-target, from 4 cm to 8 cm, the refractive index of the CZO films decreased. In the visible wavelength region, the average value of the transmittance was above 80%. Thus, significant changes in the structural and optical properties have occurred due to the decrease of the distance between the target-substrate and the residual compressive stress at the film-substrate interface arising during deposition.

Structural Properties of Deposited ZnO Thin Films on Flexible Substrates at Various Substrate Temperatures and RF Power

2012 ◽  
Vol 576 ◽  
pp. 598-601
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Hanafi Ani Mohd ◽  
Rusop Mahmood Mohamad
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flexible Substrates ◽  
Rf Power ◽  
Sem Images ◽  
Substrate Temperatures

ZnO thin films were deposited on Teflon substrates by RF magnetron sputtering at different substrate temperature and different RF power. In this work, we investigated the dependence of the deposition rate and also the ZnO physical and electrical properties on the substrate temperature and RF power. It is observed that the deposition rate increased as the temperature and RF power increased. FE-SEM images confirmed that microstructure of the thin films consists of nanoparticles. XRD data confirmed that the ZnO thin films at various RF power and substrate temperature have (002) structure.

scholarly journals Postdeposition Annealing Effect on Cu2ZnSnS4Thin Films Grown at Different Substrate Temperature

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Samia Ahmed Nadi ◽  
Puvaneswaran Chelvanathan ◽  
Zaihasraf Zakaria ◽  
Mohammad Mezbaul Alam ◽  
Zeid A. Alothman ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Gas Flow ◽  
Hall Effect Measurement ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Secondary Phases ◽  
Working Pressure ◽  
Czts Thin Films

Cu2ZnSnS4(CZTS) thin films were deposited on top of Molybdenum (Mo) coated soda lime glass (SLG) substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar) gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT), 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD) measurement revealed the structure to be kesterite with peak of (112) plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2,CuxMoSx,CuxSnSx,CuxS, and Cu6MoSnS8(hemusite) were also observed in the annealed CZTS films. Scanning electron microscopy (SEM) shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM). The conductivity type of the films was found to be p-type by Hall effect measurement system.

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