scholarly journals Observation of Oxide-film Step with Very Small Height on Si Wafer Surface Using a Laser Scattering Method

2006 ◽  
Vol 72 (11) ◽  
pp. 1363-1367
Author(s):  
Haruyuki INOUE ◽  
Toshihiko KATAOKA ◽  
Yoshihiro NAGAO ◽  
Yasushi OSHIKANE ◽  
Motohiro NAKANO ◽  
...  
Keyword(s):  
Oxide Film ◽  
Wafer Surface ◽  
Scattering Method ◽  
Laser Scattering ◽  
Small Height ◽  
Si Wafer

scholarly journals Measurement of Nano-fine Particles on Si Wafer Surface by Laser Light Scattering Method.

2001 ◽  
Vol 67 (11) ◽  
pp. 1818-1823 ◽  
Author(s):  
Satoshi SASAKI ◽  
Hiroshi AN ◽  
Yuzo MORI ◽  
Tosihiko KATAOKA ◽  
Katsuyoshi ENDO ◽  
...  
Keyword(s):  
Light Scattering ◽  
Fine Particles ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Wafer Surface ◽  
Scattering Method ◽  
Si Wafer

scholarly journals Measurement of Ultra Fine Defects on the Si Wafer Surface Using a Laser Light Scattering Method.

2002 ◽  
Vol 68 (10) ◽  
pp. 1337-1341 ◽  
Author(s):  
Haruyuki INOUE ◽  
Toshihiko KATAOKA ◽  
Yasushi OSHIKANE ◽  
Katsuyoshi ENDO ◽  
Yuzo MORI ◽  
...  
Keyword(s):  
Light Scattering ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Wafer Surface ◽  
Scattering Method ◽  
Si Wafer

scholarly journals Measurement of Ultra Fine Particles on the Si Wafer Surface Using a Laser Light Scattering Method.

1997 ◽  
Vol 63 (8) ◽  
pp. 1117-1121 ◽  
Author(s):  
Haruyuki INOUE ◽  
Toshihiko KATAOKA ◽  
Katsuyoshi ENDO ◽  
Yasushi OSHIKANE ◽  
Yuzo MORI ◽  
...  
Keyword(s):  
Light Scattering ◽  
Fine Particles ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Wafer Surface ◽  
Scattering Method ◽  
Ultra Fine Particles ◽  
Si Wafer

scholarly journals Measurement of Nanodefects on Si Wafer Surface Using System for Measuring Particle Diameter by Light-Scattering Method.

2002 ◽  
Vol 68 (9) ◽  
pp. 1200-1205 ◽  
Author(s):  
Satoshi SASAKI ◽  
Hiroshi AN ◽  
Yuzo MORI ◽  
Tosihiko KATAOKA ◽  
Katsuyoshi ENDO ◽  
...  
Keyword(s):  
Light Scattering ◽  
Particle Diameter ◽  
Wafer Surface ◽  
Scattering Method ◽  
Si Wafer

scholarly journals Inspection of Ultra Fine Particles on the Si Wafer Surface Using a Laser Light Scattering Method.

2002 ◽  
Vol 68 (2) ◽  
pp. 264-268
Author(s):  
Haruyuki INOUE ◽  
Toshihiko KATAOKA ◽  
Katsuyoshi ENDO ◽  
Yasushi OSHIKANE ◽  
Yuzo MORI ◽  
...  
Keyword(s):  
Light Scattering ◽  
Fine Particles ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Wafer Surface ◽  
Scattering Method ◽  
Ultra Fine Particles ◽  
Si Wafer

New Measurement Concept of Nanometer-Level Defects on Si Wafer Surface by Using Micro Contact Sensor

2012 ◽  
Vol 497 ◽  
pp. 137-141 ◽  
Author(s):  
Wen Jian Lu ◽  
Yuki Shimizu ◽  
Wei Gao
Keyword(s):  
Temperature Rise ◽  
Electric Circuit ◽  
Frictional Heat ◽  
Wafer Surface ◽  
Fem Model ◽  
Element Simulation ◽  
Type Contact ◽  
Contact Sensor ◽  
Measurement Concept ◽  
Si Wafer

A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.

Inspection of micro-cracks on solderball surface using a laser scattering method

2000 ◽  
Vol 183 (1-4) ◽  
pp. 19-27 ◽  
Author(s):  
C. Quan ◽  
S.H. Wang ◽  
C.J. Tay ◽  
H.M. Shang ◽  
K.C. Chan
Keyword(s):  
Scattering Method ◽  
Laser Scattering ◽  
Micro Cracks

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

2008 ◽  
Vol 389-390 ◽  
pp. 493-497 ◽  
Author(s):  
Sung Chul Hwang ◽  
Jong Koo Won ◽  
Jung Taik Lee ◽  
Eun Sang Lee
Keyword(s):  
Surface Roughness ◽  
Statistical Analysis ◽  
Process Parameters ◽  
Wafer Surface ◽  
Wafer Polishing ◽  
Ultra Precision ◽  
Important Processing ◽  
The Many ◽  
Selection Of ◽  
Si Wafer

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

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