New Measurement Concept of Nanometer-Level Defects on Si Wafer Surface by Using Micro Contact Sensor

2012 ◽  
Vol 497 ◽  
pp. 137-141 ◽  
Author(s):  
Wen Jian Lu ◽  
Yuki Shimizu ◽  
Wei Gao
Keyword(s):  
Temperature Rise ◽  
Electric Circuit ◽  
Frictional Heat ◽  
Wafer Surface ◽  
Fem Model ◽  
Element Simulation ◽  
Type Contact ◽  
Contact Sensor ◽  
Measurement Concept ◽  
Si Wafer

A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.

Design and Experiment of Thermal Contact Sensor Detecting Defects on Si Wafer Surface

2012 ◽  
Vol 523-524 ◽  
pp. 826-831 ◽  
Author(s):  
Wen Jian Lu ◽  
Yuki Shimizu ◽  
So Ito ◽  
Wei Gao
Keyword(s):  
Temperature Rise ◽  
Thermal Contact ◽  
Fem Simulation ◽  
Element Model ◽  
Frictional Heat ◽  
Wafer Surface ◽  
Sensor Element ◽  
Type Contact ◽  
Contact Sensor ◽  
Si Wafer

A deign study of a thermal-type contact sensor for the detection of small defects, the heights of which are less than 16 nm on the wafer surface, is described in this paper. The feasibility of the contact sensor, which would detect frictional heat generated at the contact with defects, was theoretically investigated focusing on the temperature rise of the sensor element. To investigate the temperature rise of the contact sensor due to the generated frictional heat, both the theoretical calculation with simple model of heat transfer and a simulation with a finite element model (FEM) was carried out. Relationship between the sensor size and the response of the temperature rise of the contact sensor was also investigated by using FEM simulation.

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

2008 ◽  
Vol 389-390 ◽  
pp. 493-497 ◽  
Author(s):  
Sung Chul Hwang ◽  
Jong Koo Won ◽  
Jung Taik Lee ◽  
Eun Sang Lee
Keyword(s):  
Surface Roughness ◽  
Statistical Analysis ◽  
Process Parameters ◽  
Wafer Surface ◽  
Wafer Polishing ◽  
Ultra Precision ◽  
Important Processing ◽  
The Many ◽  
Selection Of ◽  
Si Wafer

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

scholarly journals Observation of Oxide-film Step with Very Small Height on Si Wafer Surface Using a Laser Scattering Method

2006 ◽  
Vol 72 (11) ◽  
pp. 1363-1367
Author(s):  
Haruyuki INOUE ◽  
Toshihiko KATAOKA ◽  
Yoshihiro NAGAO ◽  
Yasushi OSHIKANE ◽  
Motohiro NAKANO ◽  
...  
Keyword(s):  
Oxide Film ◽  
Wafer Surface ◽  
Scattering Method ◽  
Laser Scattering ◽  
Small Height ◽  
Si Wafer

Thermal Effects Due to Surface Films in Sliding Contact

1994 ◽  
Vol 116 (2) ◽  
pp. 238-245 ◽  
Author(s):  
Brian Vick ◽  
L. P. Golan ◽  
M. J. Furey
Keyword(s):  
Thermal Properties ◽  
Temperature Rise ◽  
Thermal Effects ◽  
Three Dimensional ◽  
Sliding Contact ◽  
Frictional Heat ◽  
Solution Technique ◽  
Surface Films ◽  
Thermal Coupling ◽  
Efficient Manner

The present work examines theoretically the influence of surface coatings on the temperatures produced by friction due to sliding contact. A generalized thermal model is developed which incorporates three-dimensional, transient heat transfer between layered media with thermal coupling at multiple, interacting contact patches. A solution technique based on a variation of the boundary element method is developed and utilized. The method allows for the solution of the distribution of frictional heat and the resulting temperature rise in an accurate yet numerically efficient manner. Results are presented showing the influence of film thickness, thermal properties, velocity, and contact area on the division of heat and surface temperature rise. The results show that a film with thermal properties different than those of the substrate can have a pronounced effect on the predicted temperature rise.

The Study on the Surface Abrasion about Wafer Final Polishing

2009 ◽  
Vol 626-627 ◽  
pp. 147-152
Author(s):  
Jong Koo Won ◽  
Jung Taik Lee ◽  
Eun Sang Lee
Keyword(s):  
Study Design ◽  
Temperature Sensor ◽  
Processing Time ◽  
Processing Condition ◽  
Major Influence ◽  
Wafer Surface ◽  
Head Unit ◽  
Wafer Polishing ◽  
Machining Speed ◽  
Si Wafer

Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafer. This study will report the evaluation on abrasion of wafer according to processing time; machining speed and pressure which have major influence on the abrasion of Si wafer polishing, for this, this study design the head unit and analysis head unit. After that, apply to experiment. It is possible to evaluation of wafer abrasion by load cell and infrared temperature sensor. The evaluation of abrasion according to processing condition is selected to use result data that measure a pressure, machining speed, and the processing time. This result is appeared by abrasion in machining condition. Through that, the study cans evaluation a wafer abrasion in machining. It is important to obtain mirror-like wafer surface.

Analytical Modeling and Experimental Validation of Heating at the Leaf Seal/Rotor Interface

2016 ◽  
Vol 139 (4) ◽  
Author(s):  
Michael J. Pekris ◽  
Gervas Franceschini ◽  
Andrew K. Owen ◽  
Terry V. Jones ◽  
David R. H. Gillespie
Keyword(s):  
Mass Flow Rate ◽  
Analytical Model ◽  
Mass Flow ◽  
Flow Rate ◽  
Temperature Rise ◽  
Thermal Characteristic ◽  
Frictional Heat ◽  
Test Facility ◽  
Engine Operation ◽  
Secondary Air

The secondary air system of a modern gas or steam turbine is configured to satisfy a number of requirements, such as to purge cavities and maintain a sufficient flow of cooling air to key engine components, for a minimum penalty on engine cycle efficiency and specific fuel consumption. Advanced sealing technologies, such as brush seals and leaf seals, are designed to maintain pressures in cavities adjacent to rotating shafts. They offer significant reductions in secondary air parasitic leakage flows over the legacy sealing technology, the labyrinth seal. The leaf seal comprises a series of stacked sheet elements which are inclined relative to the radial direction, offering increased axial rigidity, reduced radial stiffness, and good leakage performance. Investigations into leaf seal mechanical and flow performance have been conducted by previous researchers. However, limited understanding of the thermal behavior of contacting leaf seals under sustained shaft contact has led to the development of an analytical model in this study, which can be used to predict the power split between the leaf and rotor from predicted temperature rises during operation. This enables the effects of seal and rotor thermal growth and, therefore, implications on seal endurance and rotor mechanical integrity to be quantified. Consideration is given to the heat transfer coefficient in the leaf pack. A dimensional analysis of the leaf seal problem using the method of extended dimensions is presented, yielding the expected form of the relationship between seal frictional power generation, leakage mass flow rate, and rotor temperature rise. An analytical model is derived which is in agreement. Using the derived leaf temperature distribution formula, the theoretical leaf tip temperature rise and temperature distributions are computed over a range of mass flow rates and frictional heat values. Experimental data were collected in high-speed tests of a leaf seal prototype using the Engine Seal Test Facility at Oxford University. These data were used to populate the analytical model and collapsed well to confirm the expected linear relationship. In this form, the thermal characteristic can be used with predictions of mass flow rate and frictional power generated to estimate the leaf tip and rotor temperature rise in engine operation.

Construction of the Distribution System for Ozonized Water Used in the Wet Cleaning of Si Wafer Surface

1998 ◽  
Vol 65-66 ◽  
pp. 161-164 ◽  
Author(s):  
Osamu Nakamura ◽  
M. Yoshida ◽  
Yasuharu Shirai ◽  
Masakazu Nagase ◽  
Michio Kitano ◽  
...  
Keyword(s):  
Distribution System ◽  
Wafer Surface ◽  
Si Wafer

Si wafer surface cleaning using laser-induced shock wave: a new dry cleaning methodology

2003 ◽  
Vol 169-170 ◽  
pp. 178-180 ◽  
Author(s):  
S.H. Lee ◽  
J.G. Park ◽  
J.M. Lee ◽  
S.H. Cho ◽  
H.K. Cho
Keyword(s):  
Shock Wave ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Dry Cleaning ◽  
Si Wafer

Significantly Improved Adhesion of Poly(3,4-ethylenedioxythiophene) Nanofilms to Amino-Silane Monolayer Pre-Patterned SiO2 Surfaces

2007 ◽  
Vol 7 (11) ◽  
pp. 3792-3794 ◽  
Author(s):  
Ilsun Pang ◽  
Sungsoo Kim ◽  
Jaegab Lee
Keyword(s):  
Wafer Surface ◽  
Amino Silane ◽  
Atomic Force ◽  
Wafer Substrate ◽  
Strong Adhesion ◽  
Tape Test ◽  
Vapor Phase Polymerization ◽  
Polymerization Method ◽  
Si Wafer ◽  
Pure Poly

This study reports a novel patterning method for highly pure poly(3,4-ethylenedioxythiophene) (PEDOT) nanofilms having a particularly strong adhesion to a SiO2 surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was self-assembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N-(2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETS). Then, PEDOT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion and patterning, the PEDOT nanofilms and SAMs were investigated with a Scotch® tape test, contact angle analyzer, optical and atomic force microscopes. The evaluation revealed that the newly developed bottom-up process can successfully offer a strongly adhered and selectively patterned PEDOT nanofilm on an oxidized Si wafer surface.

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