scholarly journals Enhancement of the Efficiency of the CZTS/Cds/Zno/ITO Solar Cell By Back Reflection and Buffer Layers Using SCAPS -1D

2021 ◽  
pp. 1144-1157
Author(s):  
Hardan T. Ganem ◽  
Aiad Salh
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Experimental Results ◽  
Buffer Layers ◽  
Back Reflection ◽  
A Cell ◽  
Cell Capacitance ◽  
Theoretical Results

CZTS / CdS / ZnO / ITO solar cell was studied using Solar Cell Capacitance Simulato-1D (SCAPS-1D) program. We performed an improvement on the theoretical cell by increasing the doping and thickness of some layers. As a result, the efficiency was shifted from 2.18% to 6.17% and several back reflection layers (BSL) were introduced on the enhanced cell until. We obtained a highest conversion efficiency of 13.99%.  The best reflection layer (CZTSSe) was combined with the best buffer layer (CdSe), with thickness of 0.9µm, on the enhanced cell. Thereby, we obtained a cell with a conversion efficiency of 16.53%. A second improvement was made to the best obtained cell, where the CZTSSe with thickness of 0.05µm and the CdSe with thickness of 0.9µm were combined. Consequently, the efficiency was increased from 16.53% to 21.76%. By comparing the experimental results with those obtained with the program, it was found that the program simulates reality, i.e. the experimental and theoretical results matched.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

Improving the performance of CZTS battery with environmental buffer layer and analyzing the effect of MoS2 layer on the battery

2020 ◽  
pp. 2150071
Author(s):  
Yuhang Niu ◽  
Jiyu Tang ◽  
Wenchao Zhang ◽  
Rui Huang ◽  
Long Chen
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Doping Concentration ◽  
Buffer Layers ◽  
Reference Structure ◽  
Optimal Thickness ◽  
Cell Parameters ◽  
Common Reference ◽  
The Common ◽  
Doping Type

Cu2ZnSnS4 (CZTS) materials have been widely investigated due to their excellent properties in solar cell applications. The common reference structure for CZTS cells is Al:ZnO(AZO)/i-ZnO/CdS/CZTS, but it is critical to find a suitable buffer layer material to replace toxic cadmium (Cd). In addition, the efficiency of CZTS cells is improved by improving the doping type (n or p) and doping concentration of MoS2 generated during the manufacturing process. wxAMPS was used to simulate the performance of a CZTS battery with an Al:ZnO/i-ZnO/Zn(O,S)/CZTS/(MoS2) structure. The performance of batteries using Zn(O,S) and CdS as buffer layers was compared. The optimal thickness of CZTS layer and the doping concentration of CZTS layer were calculated, and the doping type and concentration of MoS2 layer were analyzed and the performance of the battery was improved by optimizing the solar cell parameters. This work provides novel ideas for designing and manufacturing higher performance solar cells.

scholarly journals Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non-Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS-1D Software

2021 ◽  
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Atef Abdekader
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
High Efficiency ◽  
Toxic Metal ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Cds Thin Film

Cadmium telluride (CdTe), a metallic dichalcogenide material, has been utilized as an absorber layer for thin film-based solar cells with appropriate configurations, and the SCAPS-1D structures program has been used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin film buffer layer has been frequently employed as a traditional n-type heterojunction partner. In this study, numerical simulation was used to find a suitable non-toxic material for the buffer layer instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS, and In2S3), and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. carrier concentrations (NA from 2 x 1012 cm-3 to 2 x 1017 cm-3 and ND from 1 x 1016 cm-3 to 1 x 1022 ??−3) have been differed. The results showed that the CdS as buffer layer based CdTe absorber layer solar cell has the highest efficiency (?%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% have been found for ZnSe and ZnO based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin-film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high-efficiency metal oxide-based solar cells in the lab.

scholarly journals CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe

2020 ◽  
Vol 233 ◽  
pp. 05004 ◽  
Author(s):  
Eduardo Ribeiro ◽  
Helena V. Alberto ◽  
Rui C. Vilão ◽  
João M. Gil ◽  
Alois Weidinger ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Defect Layer ◽  
Buffer Layers ◽  
Cigs Solar Cell ◽  
Cell Material ◽  
Solar Cell Material

The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.

Properties of a-SiGe and Application to Stacked Solar Cell

1987 ◽  
Vol 95 ◽  
Author(s):  
H. Itozaki ◽  
N. Fujita
Keyword(s):  
Solar Cell ◽  
Glow Discharge ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Boron Doping ◽  
Lower Pressure ◽  
Deposition Technique ◽  
Single Junction ◽  
Single Junction Solar Cell ◽  
Discharge Method

AbstractDeposition technique of a-SiGe:H and its application to a stacked solar sell were investigated. Properties of a-SiGe:H were improved by a glow discharge method with a negatively biased substrate, and a mercury sensitized photo CVD under lower pressure. An a-SiGe:H single junction solar cell was improved by slight boron doping to an i layer and insertion of a buffer layer into a p/i interface. A conversion efficiency of more than 10 % was obtained by a triple stacked solar cell on a alass substrate.

Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells

2005 ◽  
Vol 475-479 ◽  
pp. 1681-1684 ◽  
Author(s):  
Ki Hwan Kim ◽  
Liudmila.L. Larina ◽  
Kyung Hoon Yoon ◽  
Makoto Konagai ◽  
Byung Tae Ahn
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Absorption Edge ◽  
Optical Transmittance ◽  
Buffer Layers ◽  
Deposition Method ◽  
Photovoltaic Properties ◽  
Cds Film

As an alternative to a CdS buffer layer for Cu(In,Ga)Se2-based solar cells, we prepared In-based buffer layers using a chemical bath deposition method. XPS and XRD analyses revealed that the In-based buffer layers contained In2S3 and InOOH phases. Compared with CdS film, the In-based film, Inx(OOH,S)y, had higher optical transmittance and a shorter absorption edge. The Cu(In,Ga)(Se,S)2 solar cell with the Inx(OOH,S)y buffer layer had better photovoltaic properties than that with a conventional CdS buffer layer. The conversion efficiency of the best Cu(In,Ga)(Se,S)2 solar cell with Inx(OOH,S)y buffer layer was 12.55 % for an active area of 0.19 cm2.

scholarly journals Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non–Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS–1D Software

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1454 ◽  
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Atef F. I. Abdelkader
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
High Efficiency ◽  
Toxic Metal ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Cds Thin Film

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. Carrier concentrations (NA from 2 × 1012 cm−3 to 2 × 1017 cm−3 and ND from 1 × 1016 cm−3 to 1 × 1022 cm−3) differed. The results showed that the use of CdS as a buffer–layer–based CdTe absorber layer for solar cell had the highest efficiency (%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% were for the ZnSe and ZnO-based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin–film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high–efficiency metal oxide–based solar cells in the lab.

scholarly journals Enhanced efficiency in hollow core electrospun nanofiber-based organic solar cells

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mohammad Ali Haghighat Bayan ◽  
Faramarz Afshar Taromi ◽  
Massimiliano Lanzi ◽  
Filippo Pierini
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Organic Solar Cells ◽  
High Efficiency ◽  
Power Conversion ◽  
Hollow Core ◽  
Pani Nanofibers

AbstractOver the last decade, nanotechnology and nanomaterials have attracted enormous interest due to the rising number of their applications in solar cells. A fascinating strategy to increase the efficiency of organic solar cells is the use of tailor-designed buffer layers to improve the charge transport process. High-efficiency bulk heterojunction (BHJ) solar cells have been obtained by introducing hollow core polyaniline (PANI) nanofibers as a buffer layer. An improved power conversion efficiency in polymer solar cells (PSCs) was demonstrated through the incorporation of electrospun hollow core PANI nanofibers positioned between the active layer and the electrode. PANI hollow nanofibers improved buffer layer structural properties, enhanced optical absorption, and induced a more balanced charge transfer process. Solar cell photovoltaic parameters also showed higher open-circuit voltage (+ 40.3%) and higher power conversion efficiency (+ 48.5%) than conventional architecture BHJ solar cells. Furthermore, the photovoltaic cell developed achieved the highest reported efficiency value ever reached for an electrospun fiber-based solar cell (PCE = 6.85%). Our results indicated that PANI hollow core nanostructures may be considered an effective material for high-performance PSCs and potentially applicable to other fields, such as fuel cells and sensors.

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.

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