Effect of heat treatment on the biochemical and conformational characteristics, and IgE-binding potency of different forms of Ara h 6

Author(s):  
Stef Koppelman
Keyword(s):  
2020 ◽  
Vol 326 ◽  
pp. 127027 ◽  
Author(s):  
Harmen H.J. de Jongh ◽  
Govardus A.H. de Jong ◽  
Danijela Apostolovic ◽  
Steve L. Taylor ◽  
Joseph L Baumert ◽  
...  

Foods ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 189 ◽  
Author(s):  
Scott Dyer ◽  
Jacqueline Nesbit ◽  
Beatriz Cabanillas ◽  
Hsiaopo Cheng ◽  
Barry Hurlburt ◽  
...  

Roasting is known to change the allergenic properties of peanuts. To study these observations at a molecular level, the relationship of IgE binding to the structure of Ara h 3 from raw and roasted peanuts was assessed. Ara h 3 (A3) was purified from raw (R), light roast (LR) and dark roast (DR) peanuts, the purity was assessed using sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) and the secondary structures were compared with circular dichroism (CD) spectroscopy. In order to understand the contribution of structure to IgE binding, the R A3 was partially denatured (PD) by heat treatment (65 °C for 2 h), subjected to CD spectroscopy and IgE spot blot analysis with sera from peanut- allergic individuals. While we observed that the secondary structure of purified A3 from R and LR peanut in solution was affected by the reduction of disulfide bonds and heat treatment when purified from the peanut following the roasting process, only small alterations were seen in the secondary structure. The purified LR A3 bound higher levels of IgE than the RA3. CD spectroscopy of PD A3 revealed a reduction in the percentage of alpha helices, and serum IgE binding. Therefore, while A3 purified from roasted peanuts did not show significant changes in secondary structure, it showed higher IgE binding than R A3. Therefore, the higher IgE binding to LR A3 was more likely to be due to chemical modifications than structural changes. However, a decrease in the IgE binding was seen if R A3 was deliberately unfolded, indicating that the structure played an important role in IgE binding to A3.


2008 ◽  
Vol 56 (23) ◽  
pp. 11225-11233 ◽  
Author(s):  
Ye Chu ◽  
Paola Faustinelli ◽  
Maria Laura Ramos ◽  
Martin Hajduch ◽  
Severin Stevenson ◽  
...  

2016 ◽  
Vol 202 ◽  
pp. 404-408 ◽  
Author(s):  
Qin Cai ◽  
Wen-ju Zhang ◽  
Qing-qing Zhu ◽  
Qin Chen
Keyword(s):  

2002 ◽  
Vol 109 (1) ◽  
pp. S286-S286
Author(s):  
Martin Suhr ◽  
Daniel Wicklein ◽  
Wolf Meinhard Becker
Keyword(s):  

Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.


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