Probing deformation mechanisms in ultrafine grained Al and Au thin films by quantitative in situ TEM deformation

Author(s):  
Josh Kacher
2020 ◽  
Vol 26 (S2) ◽  
pp. 3188-3190
Author(s):  
Josh Kacher ◽  
Sandra Stangebye ◽  
Saurabh Gupta ◽  
Olivier Pierron

2013 ◽  
Vol 61 (1) ◽  
pp. 205-216 ◽  
Author(s):  
F. Mompiou ◽  
M. Legros ◽  
A. Boé ◽  
M. Coulombier ◽  
J.-P. Raskin ◽  
...  

2011 ◽  
Vol 65 (5) ◽  
pp. 377-379 ◽  
Author(s):  
Hongtao Wang ◽  
Anmin Nie ◽  
Jiabin Liu ◽  
Peng Wang ◽  
Wei Yang ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 7146-7158
Author(s):  
Saurabh Gupta ◽  
Sandra Stangebye ◽  
Katherine Jungjohann ◽  
Brad Boyce ◽  
Ting Zhu ◽  
...  

Quantitative in situ TEM true activation volume measurements in nanoscale specimens with simultaneous observations of plastic deformation mechanisms.


1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.


2005 ◽  
Vol 875 ◽  
Author(s):  
Marc Legros ◽  
Gerhard Dehm ◽  
T. John Balk

AbstractTo investigate the origin of the high strength of thin films, in-situ cross-sectional TEM deformation experiments have been performed on several metallic films attached to rigid substrates. Thermal cycles, comparable to those performed using laser reflectometry, were applied to thin foils inside the TEM and dislocation motion was recorded dynamically on video. These observations can be directly compared to the current models of dislocation hardening in thin films. As expected, the role of interfaces is crucial, but, depending on their nature, they can attract or repel dislocations. When the film/interface holds off dislocations, experimental values of film stress match those predicted by the Nix-Freund model. In contrast, the attracting case leads to higher stresses that are not explained by this model. Two possible hardening scenarios are explored here. The first one assumes that the dislocation/interface attraction reduces dislocation mobility and thus increases the yield stress of the film. The second one focuses on the lack of dislocation nucleation processes in the case of attracting interfaces, even though a few sources have been observed in-situ.


Author(s):  
Daniel Bufford ◽  
Douglas Stauffer ◽  
William Mook ◽  
S.A. Syed Asif ◽  
Brad Boyce ◽  
...  

2011 ◽  
Vol 17 (S2) ◽  
pp. 1362-1363
Author(s):  
P Gao ◽  
C Nelson ◽  
J Jokisaari ◽  
S Baek ◽  
C Eom ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.


Sign in / Sign up

Export Citation Format

Share Document