scholarly journals Cross-Coupling Polymerization at Iodophenyl Thin Films Prepared by Spontaneous Grafting of a Diazonium Salt

2020 ◽  
Author(s):  
Nicholas Marshall ◽  
Andres Rodriguez
Keyword(s):  
Thin Films ◽  
Polymer Film ◽  
Film Growth ◽  
Diazonium Salt ◽  
Cross Coupling ◽  
Chain Termination ◽  
Kinetics Of ◽  
Coupling Polymerization

Development of a method for the surface-initiated Kumada cross-coupling polymerization based on 4-iodophenyldiazonium salt thin films. Studies of the kinetics of chain termination and polymer film growth, and use of this method to make polythiophene brushes.<br>

Cross-Coupling Polymerization at Iodophenyl Thin Films Prepared by Spontaneous Grafting of a Diazonium Salt

2020 ◽  
Author(s):  
Nicholas Marshall ◽  
Andres Rodriguez
Keyword(s):  
Thin Films ◽  
Polymer Film ◽  
Film Growth ◽  
Diazonium Salt ◽  
Cross Coupling ◽  
Chain Termination ◽  
Kinetics Of ◽  
Coupling Polymerization

Development of a method for the surface-initiated Kumada cross-coupling polymerization based on 4-iodophenyldiazonium salt thin films. Studies of the kinetics of chain termination and polymer film growth, and use of this method to make polythiophene brushes.<br>

Cross-Coupling Polymerization at Iodophenyl Thin Films Prepared by Spontaneous Grafting of a Diazonium Salt

2019 ◽  
Author(s):  
Nicholas Marshall ◽  
Andres Rodriguez
Keyword(s):  
Thin Films ◽  
Diazonium Salt ◽  
Cross Coupling ◽  
Coupling Polymerization

Development of a method for the surface-initiated Kumada cross-coupling polymerization based on 4-iodophenyldiazonium salt thin films, and use of this method to make very thick polythiophene brushes.<br>

scholarly journals Cross-coupling polymerization at iodophenyl thin films prepared by spontaneous grafting of a diazonium salt

2020 ◽  
Vol 2 ◽  
pp. e6 ◽  
Author(s):  
Nicholas Marshall ◽  
Andres Rodriguez
Keyword(s):  
Thin Films ◽  
Conjugated Polymer ◽  
Surface Coverage ◽  
Diazonium Salt ◽  
Aryl Halide ◽  
Cross Coupling ◽  
Coupling Reactions ◽  
Cross Coupling Reactions ◽  
Gold Substrates ◽  
Coupling Polymerization

Cross-coupling at aryl halide thin films has been well-established as a technique for the surface-initiated Kumada catalyst transfer polymerization (SI-KCTP), used to produce covalently bound conjugated polymer thin films. In this work, we report that the spontaneous grafting of 4-iodobenzenediazonium tetrafluoroborate on gold substrates creates a durable iodoarene layer which is effective as a substrate for cross-coupling reactions including SI-KCTP. Using cyclic voltammetry of a surface-coupled ferrocene terminating agent, we have measured initiator surface coverage produced by oxidative addition of Pd(t-Bu3P)2 and estimated the rate constant of the termination reaction in the SI-KCTP system with 2-chloromagnesio-5-bromothiophene and Pd(t-Bu3P)2. We used this system to prepare uniform polythiophene thin films averaging 90 nm in thickness.

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

1999 ◽  
Vol 595 ◽  
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

AbstractWe report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the αGaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

Growth and Structure of Thin Films by High-Intensity Pulsed Ion-Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
YU.F. Ivanov ◽  
V.M. Matvienko ◽  
A.V. Potyomkin ◽  
G.E. Remnev ◽  
A.N. Zakoutayev
Keyword(s):  
Thin Films ◽  
High Intensity ◽  
Film Growth ◽  
Ion Beam ◽  
High Rate ◽  
Layer By Layer ◽  
Ceramic Substrates ◽  
Transmission Electron ◽  
Ion Current Density ◽  
Kinetics Of

AbstractThe high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma ( ∼1020 cm-3; ∼1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target 200 A/cm ; power density (0.7 – 1.5) 108 W/cm2; pulse duration 60 ns; pulse repetition rate 8-10 min-1). The deposition of the films was carried out at room temperature at a high rate of 0.6 – 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.

scholarly journals Growth kinetics of GaN thin films grown by OMVPE using single source precursors

2000 ◽  
Vol 5 (S1) ◽  
pp. 152-158
Author(s):  
R. A. Fischer ◽  
A. Wohlfart ◽  
A. Devi ◽  
W. Rogge
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Film Growth ◽  
High Growth ◽  
Near Band Edge ◽  
Single Source ◽  
Rocking Curve ◽  
Single Source Precursor ◽  
Kinetics Of ◽  
Reactor Pressure

We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the α-GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 substrates in the temperature range of 870 – 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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