ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF A INJECTION LOCKED OSCILLATOR

2020 ◽  
Vol 4 (2) ◽  
pp. 43-50
Author(s):  
E.L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Epitaxial Layer ◽  
Field Effect ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Dopant Diffusion ◽  
Time And Space ◽  
Varying Parameters ◽  
Specific Configuration

We analyzed possibility to increase density of field-effect heterotransistors framework an injection locked oscillator. We obtain, that to increase the density of the considered transistors one shall manufacture them in a heterostructure with specific configuration (substrate and epitaxial layer with sections, which were manufactured by using other materials). These sections should be doped by using ion implantation or dopant diffusion. After the doping optimized annealing of dopant and/or radiation defects should done. To formulate recommendations for the optimization we model mass transport (with account nonlinearity) with time and space varying parameters. To make the modelling we introduce an analytical approach. The approach gives a possibility to make the above modelling without crosslinking of solution on interfaces of the heterostructure.

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals On Optimization of Manufacturing of a Injection-Locked Frequency Divider based on Heterostructures to Increase Density of Their Elements. Influence of Mismatch-Induced Stress and Porosity of Materials on Technological Process

2021 ◽  
Vol 23 (2) ◽  
pp. 111-163
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals On Prognosis of Manufacturing of an Enhanced Swing Differential Colpitts Oscillator Based on Heterostructures to Increase Density of Their Elements: Influence of Mismatch-Induced Stress

2020 ◽  
Vol 21 (1) ◽  
pp. 23-69
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density

2021 ◽  
Vol 1 (1) ◽  
pp. 10-31
Author(s):  
Evgeny L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. On increasing of integration rate of elements of the amplifier

2019 ◽  
Vol 8 (1) ◽  
pp. 53-61
Author(s):  
Evgeny L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Annealing Time ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Amplifier Circuit ◽  
Spatial Coordinate ◽  
Limiting Amplifier

In this paper we introduce an analytical approach for prognosis of mass transport during manufacturing of a limiting amplifier circuit. Based on this approach we obtain conditions to increase density of elements of this circuit, manufactured by diffusion or ion implantation with optimized annealing time of dopant and/or radiation defects. The above analytical approach gives a possibility to take into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time.

On Optimization of Manufacturing of Instrumentation Amplifier Input Bias Circuitry to Increase Density of Elements

2021 ◽  
Vol 7 (4) ◽  
Keyword(s):  
Integrated Circuits ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Instrumentation Amplifier ◽  
Radiation Defects ◽  
Amplifier Input ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework instrumentation amplifier input bias circuitry. Framework the approach, we consider the manufacturing of inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. Moreover, do pant and radiation defects should by annealed framework by optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On increasing of density of transistors in a hybrid cascaded multilevel inverter

2017 ◽  
Vol 13 (4) ◽  
pp. 664-677
Author(s):  
Evgeny L. Pankratov ◽  
Elena A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Epitaxial Layer ◽  
Design Methodology ◽  
Analytical Approach ◽  
Bipolar Transistors ◽  
Multilevel Inverter ◽  
Radiation Defects ◽  
Content Type ◽  
Cascaded Multilevel Inverter ◽  
Model Diffusion

Purpose The purpose of this paper is to analytically model redistribution of dopant in a heterostructure during annealing of dopant and/or radiation defects (during the modeling, the authors consider two types of infusing of the dopant: dopant diffusion and ion implantation). The authors consider a heterostructure, which consists of a substrate and an epitaxial layer. After that the authors consider doping of several specific areas to manufacture heterodiodes and heterobipolar transistors framework hybrid cascaded multilevel inverter. Design/methodology/approach Based on the modeling, the authors introduce an approach to increase density of diodes and bipolar transistors framework hybrid cascaded multilevel inverter, which has been manufactured based on the heterostructure. The approach is based on using inhomogeneity of the heterostructure and optimization of annealing of dopant and/or radiation defects. Findings The approach gives us possibility to take into account nonlinearity of considered processes. Originality/value The authors introduce an analytical approach to model diffusion and ion types of doping with account concurrent changing of parameters in space and time.

On Approach to Increase Integration Rate of Double-Gate Heterotransistors

2017 ◽  
Vol 16 (04) ◽  
pp. 1650039
Author(s):  
E. L. Pankratov ◽  
E. A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Double Gate ◽  
Radiation Defects ◽  
Variation Of Parameters ◽  
Framework Approach ◽  
Account Variation

In this paper, we introduce an approach to manufacture a field-effect heterotransistor with two gates. In the framework approach, we consider a heterostructure with required configuration, doping of required parts of the heterostructure by diffusion and/or ion implantation and optimization of annealing of dopant or radiation defects. The introduced approach of manufacturing a transistor gives us the possibility to decrease area of surface and thickness of the transistor. In this paper, we also introduce an approach to make prognosis of mass and heat transport with account variation of parameters of these processes in space in time and nonlinearity of these processes.

Increasing the Density of Field-Effect Heterotransistors in an Amplifier Flipped Voltage Follower Mirrors with Account of Miss-Match Induced Stress

2021 ◽  
Vol 8 (1) ◽  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Current Mode ◽  
Instrumentation Amplifier ◽  
Flipped Voltage Follower ◽  
Induced Stress ◽  
Voltage Follower ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework current mode instrumentation amplifier flipped voltage follower mirrors. The approach we consider for manufacturing of the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We also introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

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