Increasing the Density of Field-Effect Heterotransistors in an Amplifier Flipped Voltage Follower Mirrors with Account of Miss-Match Induced Stress

2021 ◽  
Vol 8 (1) ◽  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Current Mode ◽  
Instrumentation Amplifier ◽  
Flipped Voltage Follower ◽  
Induced Stress ◽  
Voltage Follower ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework current mode instrumentation amplifier flipped voltage follower mirrors. The approach we consider for manufacturing of the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We also introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

On Optimization of Manufacturing of Instrumentation Amplifier Input Bias Circuitry to Increase Density of Elements

2021 ◽  
Vol 7 (4) ◽  
Keyword(s):  
Integrated Circuits ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Instrumentation Amplifier ◽  
Radiation Defects ◽  
Amplifier Input ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework instrumentation amplifier input bias circuitry. Framework the approach, we consider the manufacturing of inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. Moreover, do pant and radiation defects should by annealed framework by optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals On approach to optimize manufacturing of field-effect hetero transistors frame work a HERIC-inverter to increase their integration rate. On influence mismatch-induced stress

2019 ◽  
Vol 8 (1) ◽  
pp. 35-52
Author(s):  
E.L. Pankratov
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Hetero Structure ◽  
Pv Systems ◽  
Induced Stress ◽  
Specific Configuration ◽  
Frame Work ◽  
Systems Framework

In this paper we introduce an approach to increase density of field-effect transistors framework a circuit of HERIC-inverter with photovoltaic (PV) systems. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the hetero structure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals On Optimization of Manufacturing of a Injection-Locked Frequency Divider based on Heterostructures to Increase Density of Their Elements. Influence of Mismatch-Induced Stress and Porosity of Materials on Technological Process

2021 ◽  
Vol 23 (2) ◽  
pp. 111-163
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals On Prognosis of Manufacturing of an Enhanced Swing Differential Colpitts Oscillator Based on Heterostructures to Increase Density of Their Elements: Influence of Mismatch-Induced Stress

2020 ◽  
Vol 21 (1) ◽  
pp. 23-69
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals An Approach to Decrease Dimensions of Field-Effect Hetero-Transistors in an Injection-Locked Frequency Divider with Account Miss Match Induced Stress and Porosity of Materials to Increase Their Density

2021 ◽  
Vol 1 (1) ◽  
pp. 10-31
Author(s):  
Evgeny L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Frequency Divider ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

A current mode instrumentation amplifier based on the flipped voltage follower in 0.50 µm CMOS

2016 ◽  
Vol 87 (3) ◽  
pp. 389-398 ◽  
Author(s):  
Gregorio Zamora-Mejía ◽  
Jaime Martínez-Castillo ◽  
José Miguel Rocha-Pérez ◽  
Alejandro Díaz-Sánchez
Keyword(s):  
Current Mode ◽  
Instrumentation Amplifier ◽  
Flipped Voltage Follower ◽  
Voltage Follower ◽  
A Current

scholarly journals Low temperature multi-differential operational amplifier

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (5) ◽  
pp. 52-60
Author(s):  
O. V. Dvornikov ◽  
V. A. Tchekhovski ◽  
V. L. Dziatlau ◽  
A. V. Kunts ◽  
N. N. Prokopenko
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Operational Amplifier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Instrumentation Amplifier ◽  
Current Consumption ◽  
Effect Transistor

A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.

Sign in / Sign up

Export Citation Format

Share Document