scholarly journals AlGaN/GaN HEMT TRAP CHARACTERISTIC FREQUENCY DEPENDENCE ON TEMPERATURE AND ITS IMPACT ON THE RF POWER AMPLIFIER LINEARIZABILITY

2021 ◽  
Author(s):  
Joao Gomes ◽  
Luis Nunes ◽  
Jose Pedro
Keyword(s):  
Activation Energy ◽  
Characteristic Frequency ◽  
Long Term Memory ◽  
Rf Power Amplifiers ◽  
Rf Power ◽  
Active Device ◽  
Rf Power Amplifier ◽  
Thermally Activated ◽  
Gan Hemt ◽  
Trap Activation

This paper presents a study of the linearizability of AlGaN/GaN HEMT based RF power amplifiers, RFPAs, and its relation with the active device trap activation energy. Based on the theory of thermally activated traps and on the experimental determination of the trap activation energy, we could show that despite different devices may exhibit traps with the same emission timeconstant at room temperature, their characteristic frequency may change significantly under nominal operation because of their temperature rise. And this was found to be key to explain the distinct linearizability performance of the tested devices because different stimulus dynamics excite the long-term memory effects imposed by traps with sensible different levels.

HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

2004 ◽  
Vol 14 (03) ◽  
pp. 847-852 ◽  
Author(s):  
SHOUXUAN XIE ◽  
VAMSI PAIDI ◽  
STEN HEIKMAN ◽  
LIKUN SHEN ◽  
ALESSANDRO CHINI ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Input Capacitance ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity ◽  
Nonlinear Input ◽  
Class B ◽  
Useful Power ◽  
The One

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT

2014 ◽  
Author(s):  
Masayuki Okamoto ◽  
Toshihiko Tanaka ◽  
Koyo Matuzaki ◽  
Tamotsu Hashizume ◽  
Hiroaki Yamada
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Class E

scholarly journals DESIGN OF BROADBAND, HIGH-EFFICIENCY, AND HIGH-LINEARITY GAN HEMT CLASS-J RF POWER AMPLIFIER

2017 ◽  
Vol 72 ◽  
pp. 177-186 ◽  
Author(s):  
Seyed Alireza Mohadeskasaei ◽  
Fuhong Lin ◽  
Xianwei Zhou ◽  
Sani Umar Abdullahi ◽  
Abdurahman Ahmat
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity
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