On Prognosis of Growth of Epitaxial Layers during Pulsed Laser Deposition under the Influence of Changes of Parameters

2021 ◽  
Vol 8 (2) ◽  
pp. 2219
Author(s):  
E. L. Pankratov
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Layers

Pulsed laser deposition of epitaxial layers of ZnSe

1995 ◽  
Vol 86 (1-4) ◽  
pp. 149-153 ◽  
Author(s):  
J.L. Deiss ◽  
A. Chergui ◽  
L. Koutti ◽  
J.L. Loison ◽  
M. Robino ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Layers

Epitaxial Growth of ZnTe and ZnSe on GaAs by Pulsed Laser Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
Y. Luo ◽  
A. Aydinli ◽  
N Lavalle ◽  
A. Compaan
Keyword(s):  
Pulsed Laser Deposition ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Near Band Edge ◽  
Epitaxial Layers ◽  
High Crystalline Quality ◽  
Growth Technique ◽  
Edge Features

ABSTRACTWe report the successful growth of ZnTe and ZnSe epitaxial layers on GaAs by pulsed laser deposition. A frequency doubled Nd:YAG laser was used to ablate/evaporate II-VI bulk targets and pressed powder targets in an ultra high vacuum enclosure. For typical growth temperatures in the range 200°-400°C x-ray analysis of the layers revealed sharp <100> peaks with no evidence of growth in other orientations. Polarization dependent Raman spectroscopy was also used to further characterize the epitaxial layers, by verifying the selection rules for backscattering from <100> oriented films. The low temperature photoluminescence spectra show distinct near-band-edge features indicating high crystalline quality. The photoluminescence of the films grown from bulk targets was superior to that of films grown from pressed powder targets, indicating that the use of high purity bulk targets is critical. Our results indicate that pulsed laser deposition is a promising new growth technique for the fabrication of II-VI epitaxial layers with unique advantages.

Growth of ZnSe Epitaxial Layers and ZnSe/ZnS Superlattices by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
Y. Luo ◽  
B. T. Adkins ◽  
A. Compaan
Keyword(s):  
Pulsed Laser Deposition ◽  
Free Exciton ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Epitaxial Layers ◽  
Growth Technique ◽  
Light Emitter ◽  
Strained Layer Superlattices

ABSTRACTWe report the successful growth of ZnSe and ZnSe/ZnS superlattices on GaAs by pulsed laser deposition. An XeCl excimer laser operated at 308 nm was used to ablate/evaporate Il-VI bulk targets in an ultra high vacuum enclosure. For typical growth temperatures in the range 350°–450°C we obtained epitaxial layers with excellent optical properties. The laser power and fluence were varied to produce growth rates in the range 0.1–1 Å/pulse. The photoluminescence of the pulsed laser deposited ZnSe layers showed dominant bound and free exciton features. The superlattice samples showed large blue shifts (∼400 meV) in the photoluminescence as the layer thicknesses were varied. These results are consistent with strong quantum confinement of the heavy holes in the ZnSe layers (valence band offset for ZnSe/ZnS ∼ 850±100 meV), while the electrons are not confined to either layer because of very small conduction band offsets Strong exciton photoluminescence exhibited by our samples indicates that pulsed laser deposition is a promising growth technique for the fabrication of iI-VI epitaxial layers and strained layer superlattices for visible light emitter applications.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films
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