Course Construction of Radio Frequency Electronic Circuits Based on OBE Concept

2018 ◽

pp. 6136-6146

Author(s):

Gianmarco Baldini ◽

Gary Steri ◽

Raimondo Giuliani

Keyword(s):

Radio Frequency ◽

Research Work ◽

Main Idea ◽

Physical Layer ◽

Manufacturing Processes ◽

Wireless Devices ◽

Electronic Circuits ◽

Rf Components ◽

Wireless Device ◽

Rf Signal

Extensive research has been performed in recent years for the identification of wireless devices from their radio frequency (RF) emissions. The main idea of identifying a wireless device through its RF emissions is that the electronic circuits and the RF components have specific characteristics determined by the production and manufacturing processes. These characteristics, which result in unique differences, can be used to distinguish a wireless device from another because they appear as subtle modification of the RF signal in space even if the wireless device generates a signal conformant to the standard. This chapter describes the main techniques for the fingerprinting of wireless devices using their RF transmission. There are still however some key challenges to overcome. This chapter tries to identify them in this context as well as providing possible approaches to solve them. Further research work is needed to investigate the portability issues between fingerprints taken using different receivers, as well as to identify and remove potential other sources of bias.

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Identification of Wireless Devices From Their Physical Layer Radio-Frequency Fingerprints

Advances in Computer and Electrical Engineering - Advanced Methodologies and Technologies in Network Architecture, Mobile Computing, and Data Analytics ◽

10.4018/978-1-5225-7598-6.ch068 ◽

2019 ◽

pp. 937-949

Author(s):

Gianmarco Baldini ◽

Gary Steri ◽

Raimondo Giuliani

Keyword(s):

Radio Frequency ◽

Research Work ◽

Main Idea ◽

Physical Layer ◽

Manufacturing Processes ◽

Wireless Devices ◽

Electronic Circuits ◽

Rf Components ◽

Wireless Device ◽

Rf Signal

Extensive research has been performed in recent years for the identification of wireless devices from their radio frequency (RF) emissions. The main idea of identifying a wireless device through its RF emissions is that the electronic circuits and the RF components have specific characteristics determined by the production and manufacturing processes. These characteristics, which result in unique differences, can be used to distinguish a wireless device from another because they appear as subtle modification of the RF signal in space even if the wireless device generates a signal conformant to the standard. This chapter describes the main techniques for the fingerprinting of wireless devices using their RF transmission. There are still some key challenges to overcome. This chapter tries to identify them in this context as well as providing possible approaches to solve them. Further research work is needed to investigate the portability issues between fingerprints taken using different receivers, as well as to identify and remove potential other sources of bias.

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Interactions Between Al and Cr Thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100093158 ◽

1976 ◽

Vol 34 ◽

pp. 638-639

Author(s):

R. M. Anderson ◽

T. M. Reith ◽

M. J. Sullivan ◽

E. K. Brandis

Keyword(s):

Thin Films ◽

Room Temperature ◽

Vacuum System ◽

Processing Temperature ◽

Diffusion Couples ◽

Electronic Circuits ◽

Intermetallic Formation ◽

Si Substrates ◽

Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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