Effect of incidence angle on the electrical parameters of vertical parallel junction silicon solar cell under frequency domain

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

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Incidence angle and spectral effects on vertical junction silicon solar cell capacitance

TURKISH JOURNAL OF PHYSICS ◽

10.3906/fiz-1311-9 ◽

2014 ◽

Vol 38 ◽

pp. 221-227 ◽

Cited By ~ 6

Author(s):

Moustapha SANE ◽

Gökhan ŞAHİN ◽

Fabé Idrissa BARRO ◽

Amadou Seidou MAIGA

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Incidence Angle ◽

Cell Capacitance

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Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

Review of Scientific Instruments ◽

10.1063/1.4913659 ◽

2015 ◽

Vol 86 (3) ◽

pp. 033901 ◽

Cited By ~ 11

Author(s):

Y. Zhang ◽

A. Melnikov ◽

A. Mandelis ◽

B. Halliop ◽

N. P. Kherani ◽

...

Keyword(s):

Solar Cell ◽

Transport Properties ◽

Frequency Domain ◽

Silicon Solar Cell ◽

Crystalline Silicon ◽

Parameter Measurement ◽

Crystalline Silicon Solar Cell ◽

Measurement Reliability ◽

Photocarrier Radiometry

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ILLUMINATION WAVELENGTH EFFECT ON ELECTRICAL PARAMETERS OF A PARALLEL VERTICAL JUNCTION SILICON SOLAR CELL UNDER STEADY STATE AND UNDER IRRADIATION

International Journal of Research in Engineering and Technology ◽

10.15623/ijret.2016.0507021 ◽

2016 ◽

Vol 05 (07) ◽

pp. 128-135 ◽

Cited By ~ 1

Author(s):

Alioune Badara Dieng .

Keyword(s):

Steady State ◽

Solar Cell ◽

Silicon Solar Cell ◽

Electrical Parameters ◽

Illumination Wavelength

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Selection of Materials for Double Layer Antireflection Coating of Silicon Solar Cell

International Journal of Emerging Trends in Engineering Research ◽

10.30534/ijeter/2021/059102021 ◽

2021 ◽

Vol 9 (10) ◽

pp. 1327-1331

Keyword(s):

Solar Cell ◽

Double Layer ◽

Silicon Solar Cell ◽

Antireflection Coating ◽

Antireflection Coatings ◽

Electrical Parameters ◽

Wide Range ◽

Cell Simulation ◽

Select Material ◽

Selection Of

In present work an attempt has been made to select material to design double layer antireflection coatings (DLARC) for silicon solar cell, theoretically. In this regard, silicon nitride (Si3N4) is used along with MgF2 and SiO2 to design DLARC to achieve zero reflectance over wide range of spectra. Reflection spectra for DLARC systems of MgF2/Si3N4 and SiO2/Si3N4 have been evaluated numerically using transfer matrix method (TMM). Further, reflectance for MgF2/Si3N4 is investigated at various monitoring wavelengths (o = 550, 600, 650 and 700 nm). Calculated reflectance has been used in PC1D simulator to study the effect of double layer antireflection coating on optical and electrical parameters of silicon solar cell. Simulation results shows, reduction in reflectance form > 30% down to zero in the wavelength range 500 – 700 nm with conversion efficiency 21.33% at 600 nm for MgF2/Si3N4.

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