scholarly journals Selection of Materials for Double Layer Antireflection Coating of Silicon Solar Cell

In present work an attempt has been made to select material to design double layer antireflection coatings (DLARC) for silicon solar cell, theoretically. In this regard, silicon nitride (Si3N4) is used along with MgF2 and SiO2 to design DLARC to achieve zero reflectance over wide range of spectra. Reflection spectra for DLARC systems of MgF2/Si3N4 and SiO2/Si3N4 have been evaluated numerically using transfer matrix method (TMM). Further, reflectance for MgF2/Si3N4 is investigated at various monitoring wavelengths (o = 550, 600, 650 and 700 nm). Calculated reflectance has been used in PC1D simulator to study the effect of double layer antireflection coating on optical and electrical parameters of silicon solar cell. Simulation results shows, reduction in reflectance form > 30% down to zero in the wavelength range 500 – 700 nm with conversion efficiency 21.33% at 600 nm for MgF2/Si3N4.

2016 ◽  
Vol 40 ◽  
pp. 30-39 ◽  
Author(s):  
Mohamed MEDHAT ◽  
El-Sayed EL-ZAIAT ◽  
Samy FARAG ◽  
Gamal YOUSSEF ◽  
Reda ALKHADRY

2011 ◽  
Vol 66-68 ◽  
pp. 1-4
Author(s):  
Wen Liang Wang ◽  
Xiao Hong Rong

The refractive index of silicon material is very high, and antireflection coatings are widely used to improve conversion efficiencies of silicon solar cells. An ideal antireflection structure should lead to zero reflection loss on its surfaces over an extended solar spectral range for all angles of incidence. Based on optical thin film theory, a multilayer structure are adopted as initial stack, and with the aid of conjugate graduate optimized method, a broadband and wide-angle antireflection is designed for using on silicon solar cell. In our design, the incident angles of antireflection coating are considered from to , working wavelength ranges are considered from 400nm to 1200nm. Within these ranges, the design results show that it can reduce residual reflection evidently in theory.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Hsi-Chien Liu ◽  
Gou-Jen Wang

The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.


2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Tchouadep Guy Serge ◽  
Zouma Bernard ◽  
Korgo Bruno ◽  
Soro Boubacar ◽  
Savadogo Mahamadi ◽  
...  

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.


Author(s):  
Ali Radwan ◽  
Mohamed M. Awad ◽  
Shinichi Ookawara ◽  
Mahmoud Ahmed

Abstract In this study, a new design of double layer microchannel heat sink (DL-MCHS) has been monolithically fabricated using 3D metal printer and experimentally examined as a heat sink for concentrator photovoltaic (CPV) systems. Single phase liquid cooling using ethanol and flow boiling cooling using NOVEC-7000 coolant in the designed DL-MCHS are experimentally compared. The results proved that using the flow boiling cooling technique for the CPV systems attained a lower solar cell temperature with high temperature uniformity. In more details, flow boiling in counterflow (CF) operated DL-MCHS, attained a very low solar cell temperature close to the NOVEC-7000 boiling point with temperature uniformity of 0.2 °C over a wide range of coolant flow rate from 25–250 ml/hr.


1990 ◽  
Vol 192 ◽  
Author(s):  
A. Banerjee ◽  
S. Guha

ABSTRACTA two-layer MgF2/ITO antireflection (AR) coating has been used to reduce the reflection losses from the surface of a hydrogenated amorphous silicon alloy solar cell. This has resulted in a higher efficiency device primarily due to an improved blue response. The relative thicknesses of the MgF2 and ITO layers have been tailored to give the highest overall quantum efficiency (Q) values, which are higher than that obtained with a single-layer antireflection coating. Typically, the 0 value at 400 nm (Q400) has been increased from 0.58 to 0.68 for a single a:SiH cell. Incorporation of the double-layer AR coating in conjunction with μc-SiC p-layer has yielded Q400 value of 0.77. The total current density obtained by adding the individual contribution of the component cells of a dual bandgap triple amorphous silicon alloy solar cell has been increased from 21.90 to 23.27 mA/cm2 using the double-layer AR coating.


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