On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field

2009 ◽  
Vol 36 (1) ◽  
pp. 21-28
Author(s):  
O. A. Klimenko ◽  
N. V. D’yakonova ◽  
V. Knap ◽  
Yu. A. Mityagin ◽  
V. N. Murzin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Frequency ◽  
Resonant Tunneling ◽  
Electron Distribution ◽  
Contact Region ◽  
High Frequency Response ◽  
Tunneling Diode ◽  
High Frequency Electric Field ◽  
Frequency Electric Field ◽  
Quantum Amplification
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