Efficiency Enhancement of Polycrystalline Silicon Solar Cell Due to Integration of Ag Nanoparticles Fabricated by Rapid Thermal Annealing

2019 ◽  
pp. 489-495
Author(s):  
Bidyut Barman ◽  
Hrishikesh Dhasmana ◽  
Abhishek Verma ◽  
Amit Kumar ◽  
D. N. Singh ◽  
...  
Keyword(s):  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ag Nanoparticles ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Efficiency Enhancement

Photoelectric efficiency enhancement of a polycrystalline silicon solar cell coated with an EVA film containing Eu3+ complex by addition of modified SiO2

RSC Advances ◽  
2016 ◽  
Vol 6 (111) ◽  
pp. 110409-110415 ◽  
Author(s):  
Jin Dong ◽  
Baoping Lin
Keyword(s):  
Solar Cell ◽  
Composite Film ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Photoelectric Conversion Efficiency ◽  
Efficiency Enhancement ◽  
Photoelectric Conversion

Modified SiO2 was doped into an EVA film containing a Eu3+ complex and the results show that the fluorescence of the EVA composite film increased, which helped to improve the photoelectric conversion efficiency of the solar cell.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal Annealing

1989 ◽  
Vol 136 (1) ◽  
pp. 215-224 ◽  
Author(s):  
M. Delfino ◽  
J. G. de Groot ◽  
K. N. Ritz ◽  
P. Maillot
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Small scale optimization in crystalline silicon solar cell on efficiency enhancement of low-concentrating photovoltaic cell

Solar Energy ◽  
2020 ◽  
Vol 202 ◽  
pp. 316-325
Author(s):  
Guiqiang Li ◽  
Yashun Lu ◽  
Qingdong Xuan ◽  
Yousef Golizadeh Akhlaghi ◽  
Gang Pei ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Photovoltaic Cell ◽  
Small Scale ◽  
Crystalline Silicon Solar Cell ◽  
Efficiency Enhancement ◽  
Scale Optimization

Insights on the enhanced Raman scattering of monolayer TMDCs (Mo, W)(S, Se)2 with Ag nanoparticles via rapid thermal annealing

2020 ◽  
Vol 520 ◽  
pp. 146367
Author(s):  
Guofeng Yang ◽  
Xiudong Fang ◽  
Yan Gu ◽  
Aaron Danner ◽  
Feng Xie ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ag Nanoparticles ◽  
Enhanced Raman Scattering

Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Narayan ◽  
T. A. Stephenson ◽  
T. Brat ◽  
D. Fathy ◽  
S. J. Pennycook
Keyword(s):  
Titanium Oxide ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Annealing Treatment ◽  
External Layer ◽  
Rich Mixture ◽  
Thermal Annealing Treatment ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

Influence of ultrathin gahnite anti-reflection coating on the power conversion efficiency of polycrystalline silicon solar cell

2019 ◽  
Vol 31 (3) ◽  
pp. 2308-2319 ◽  
Author(s):  
Gobinath Velu Kaliyannan ◽  
Senthil Velmurugan Palanisamy ◽  
Rajasekar Rathanasamy ◽  
Manivasakan Palanisamy ◽  
Sathish Kumar Palaniappan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Power Conversion
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