Fabrication of high quality, low bandgap amorphous Silicon & amorphous Silicon Germanium alloy solar cell by Chemical Annealing

2011 ◽  
Author(s):  
Ashutosh Shyam
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Quality ◽  
Low Bandgap ◽  
Chemical Annealing ◽  
Germanium Alloy ◽  
Amorphous Silicon Germanium

Amorphous Silicon—Germanium Deposited by Photo—CVD

1985 ◽  
Vol 49 ◽  
Author(s):  
H. Itozaki ◽  
N. Fujita ◽  
H. Hitotsuyanagi
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
High Quality ◽  
Transmission Electron ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Gas Ratio

AbstractHydrogenated amorphous silicon germanium (a—SiGe:H) films were deposited by photo—chemical vapor deposition (Photo—CVD) of SiH4 and GeH4 with mercury sensitizer. Their band gap was controlled from 0.9 eV to 1.9 eV by changing the gas ratio of SiH4 and GeH4. High quality opto—electrical properties have been obtained for thea—SiGe:H films by Photo—CVD. Hydrogen termination and microstructure of a-SiGe:H were investigated by infrared absorption and transmission electron microscopy. Ana—Si:H solar cell and an a—Si:H/a—SiGe:H stacked solar cell were made, each of which has conversion efficiency 5.3% and 5.1%, respectively.

Amorphous silicon-germanium alloy multilayers for solar cells

1988 ◽  
Author(s):  
J.P. Conde ◽  
V. Chu ◽  
S. Tanaka ◽  
D.S. Shen ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Germanium Alloy ◽  
Amorphous Silicon Germanium

Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors

1993 ◽  
Vol 32 (Part 2, No. 8A) ◽  
pp. L1043-L1045 ◽  
Author(s):  
Shou Wei Hsieh ◽  
Chun Yen Chang ◽  
Yeong Shyang Lee ◽  
Chiung Wei Lin ◽  
Biing Sheng Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Thin Film Transistors ◽  
Alloy Thin Film ◽  
Germanium Alloy ◽  
Amorphous Silicon Germanium
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