scholarly journals Correlation between Constant Temperature at the Preamp for a Quartz Oscillator and Stability of Pressure Sensor Output Using a Quartz Oscillator

2017 ◽  
Vol 60 (12) ◽  
pp. 499-501
Author(s):  
Atsushi SUZUKI
Keyword(s):  
Constant Temperature ◽  
Pressure Sensor ◽  
Sensor Output ◽  
Quartz Oscillator

Analysis of Coupled Electro-Thermal-Mechanical of Micro Gas Pressure Sensor Based on Micro-Hotplate Technology

2009 ◽  
Vol 60-61 ◽  
pp. 119-124
Author(s):  
Ren Cheng Jin ◽  
Wu Jin Zhang ◽  
Zhe Nan Tang ◽  
Jia Qi Wang ◽  
Ming Liang Shao
Keyword(s):  
Constant Temperature ◽  
Pressure Sensor ◽  
Thermal Deformation ◽  
Thickness Distribution ◽  
Mechanical Analysis ◽  
Gas Pressure ◽  
Constant Current ◽  
Sensor Signal ◽  
Signal Output ◽  
Thermal Mechanical Analysis

The effect of micro-hotplate (MHP) thermal deformation on the signal output of the MHP-based micro gas pressure sensor is investigated. Combining electro-thermal theoretical analysis and thermal-mechanical finite element modeling, different electro-thermal-mechanical analysis models of the sensors are built and solved at constant current condition and constant temperature condition respectively. The calculated results show that the MHP thermal deformation has little effect on the sensor signal output over the entire pressure range at constant current condition, I=0.7mA. While at constant temperature condition, Ts=400K, thermal deformation has little effect on the sensor signal output at low gas pressure, but at high pressure the effect are great. Moreover, according to the thermal-mechanical analysis, we find that optimizing thickness distribution of thin films in the MHP suspended structure can reduce thermal deformation effectively at higher temperature when the lateral dimension is same, which presents a practicable method to improve the sensor stability.

A Method for Measuring Pressure under Rotating Conditions

2013 ◽  
Vol 663 ◽  
pp. 522-527
Author(s):  
Deng Chao Li ◽  
Xiang Luo ◽  
Xu Cai
Keyword(s):  
Experimental Data ◽  
Centrifugal Force ◽  
Surface Pressure ◽  
Pressure Sensor ◽  
Rotational Speed ◽  
Output Signal ◽  
Functional Relationship ◽  
Sensor Output ◽  
Strain Type ◽  
Type Pressure

A method which can accurately measure surface pressure under rotating conditions is presented. Based on the calibration for strain type pressure sensor, a curve which shows the functional relationship between sensor output signal and actual pressure under different rotational speed is obtained; and the diaphragm deformation caused by centrifugal force can be neglected by the curve. Thus, the actual pressure can be acquired accurately. The factors which may cause errors on the experiment are analyzed. Moreover, the correctional method for the experimental data is attained.

Field In-Ice Pressure Sensor Response Tests

1983 ◽  
Vol 105 (1) ◽  
pp. 6-11
Author(s):  
A. C. T. Chen ◽  
J. S. Templeton
Keyword(s):  
Pressure Sensor ◽  
Data Reduction ◽  
Broad Class ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Ice Sheet ◽  
Sensor Response ◽  
Sensor Output ◽  
Reduction Procedure ◽  
Ice Pressure

An ice pressure sensor has been designed and built at Exxon Production Research Company (EPR) to measure the pressure in an ice sheet. Laboratory and analytical studies were performed to establish a data reduction procedure to relate the pressure sensor output to the pressure in the ice sheet. However, because of the complex mechanical behavior of sea ice, the present experiment was conducted to validate this data reduction procedure. The validated procedure is considered applicable to a broad class of embedded ice pressure sensors. Field in-ice pressure sensor response tests were conducted near Prudhoe Bay, Alaska, between February and April of 1978. Twenty-two tests were conducted on three test blocks of ice to investigate the in-ice response of three ice pressure sensors. An ice block measuring 10 ft by 20 ft and of full thickness of the natural annual ice was cut free from the surrounding ice sheet after the pressure sensor was installed at the center of the block. This ice block was loaded by an in-situ hydraulic ice loading device capable of delivering approximately two million lb of load. The pressure sensor output and the test load were monitored continuously during each test so that the pressure sensor output could be compared directly to the corresponding applied pressure. The test results indicated ratios of applied ice pressure to measured sensor pressure within the range hindcast by theoretical analysis.

scholarly journals Fabrication and Characterization of Bending- Independent Capacitive CMOS Pressure Sensor Stacks

2018 ◽  
Vol 4 (1) ◽  
pp. 595-598
Author(s):  
Roland Fischer ◽  
Heinrich Ditler ◽  
Michael Görtz ◽  
Wilfried Mokwa
Keyword(s):  
Mechanical Stress ◽  
Pressure Sensor ◽  
Output Signal ◽  
Strong Dependence ◽  
Pressure Sensors ◽  
Target Thickness ◽  
Sensor Output ◽  
Additional Information ◽  
Four Point Bending ◽  
Foil Substrate

AbstractArtificial limbs, equipped with miniaturized tactile sensors, can handle objects with more dexterousness. Next to detecting forces, the sensor devices are also able to measure temperature. With this additional information, the touched objects can be better characterized. As such sensors, active CMOS-based capacitive pressure sensors are used in this work. The Sensors are thinned to 20-30 μm target thickness to make them bendable. One challenge of such thin sensors is the strong dependence of the output signal upon bending. To compensate this dependency, two sensors were mounted back to back. This allows a numerical adjustment of the two characteristic sensor output signals to mechanical stress curves. After electrically contacting of the stacks with a 15 μm thin polyimide foil substrate, the bending dependence of the stacks was characterized with a four-point bending procedure. By this characterization the dependency of the pressure sensor output signal on the height of mechanical stress was determined. Both sensor output signals show an inverted behavior under the same mechanical stress which confirmed prior simulation results with the same setup. Based on this information, a numerical method for compensating the bending dependence was successfully proven.

Analysis and Optimization of Sensitivity of a MEMS Peizoresistive Pressure Sensor

2012 ◽  
Vol 548 ◽  
pp. 652-656 ◽  
Author(s):  
S. Maflin Shaby ◽  
A. Vimala Juliet
Keyword(s):  
Finite Element Method ◽  
Pressure Sensor ◽  
Silicon Nanowires ◽  
Structural Design ◽  
Maximum Stress ◽  
High Sensitivity ◽  
Sensor Output ◽  
Piezoresistive Effect ◽  
Piezoresistive Pressure Sensor ◽  
To Receive

This paper presents a MEMS Piezoresistive pressure sensor which utilizes a circular shaped polysilicon diaphragm with a nanowire to enhance the sensitivity of the pressure sensor. The polysilicon nanowire is fabricated in such a way that it forms a bridge between the circular polysilicon diaphragm and the substrate. The high Piezoresistive effect of Silicon nanowires is used to enhance the sensitivity. A circular polysilicon nanowire piezoresistor was fabricated by means of reactive ion etching. This paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. The polysilicon nanowire pressure sensor has a circular diaphragm of 500nm radius and has a thickness about 10nm. Finite element method (FEM) is adopted to optimize the sensor output and to improve the sensitivity of the circular shaped diaphragm of a polysilicon nanowire Piezoresistive pressure sensor. The best position to place the Polysilicon nanowires to receive maximum stress was also considered during the design process..The fabricated polysilicon nanowire has high sensitivity of about 133 mV/VKPa.

scholarly journals Investigation of sensitive element for pressure sensor based on bipolar piezotransistor

2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Output Signal ◽  
Dynamic Range ◽  
Strong Dependence ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Differential Amplifier ◽  
Sensor Output ◽  
Thin Part

The article translated from Russian to English on pp. 691-693 (please, look down). The paper summarizes results of investigation of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n piezotransistors and for p-type piezoresistors. A comparative analysis of a sensor utilizing this circuit with a pressure sensor based on traditional piezoresistive Wheatstone bridge and built on the same mechanical part is provided. MEMS pressure sensor with the differential amplifier (PSDA) has sensitivity of S = 0.66 mV/kPa/V, which exceeded the sensitivity of the element with piezoresistive Wheatstone bridge (PSWB) by 2.2 times. The sensitivity increase allows for the following sensor improvements: die size reduction, increase of diaphragm mechanical strength while keeping high pressure sensitivity, and simplifying requirements to external processing of the pressure sensor output signal. There are two main challenges related to the use of PSDA-based pressure sensors: strong dependence of output signal on temperature and higher than in PSWB noise reducing the dynamic range of the device to 10 3. The article describes methods of addressing these problems. The temperature dependence of sensor output signal can be minimized with help of an offset thermal compensation circuit and by eliminating metallization at the thin part of the diaphragm. The noise can be minimized by reducing the thickness of the active base region of the transistor. Circuit analysis with software NI Multisim shows that sensitivity of PSDA-based pressure sensor can be increased 2.3 times by circuit optimization.

Tekscan pressure sensor output changes in the presence of liquid exposure

2013 ◽  
Vol 46 (3) ◽  
pp. 612-614 ◽  
Author(s):  
Kyle S. Jansson ◽  
Max P. Michalski ◽  
Sean D. Smith ◽  
Robert F. LaPrade ◽  
Coen A. Wijdicks
Keyword(s):  
Pressure Sensor ◽  
Sensor Output
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